Topics in Growth and Device Processing of III-V Semiconductors PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Topics in Growth and Device Processing of III-V Semiconductors PDF full book. Access full book title Topics in Growth and Device Processing of III-V Semiconductors by S. J. Pearton. Download full books in PDF and EPUB format.
Author: S. J. Pearton
Publisher: World Scientific
ISBN: 9789810218843
Category : Technology & Engineering
Languages : en
Pages : 568
Get Book Here
Book Description
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
Author: S. J. Pearton
Publisher: World Scientific
ISBN: 9789810218843
Category : Technology & Engineering
Languages : en
Pages : 568
Get Book Here
Book Description
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
Get Book Here
Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author: Shiban Tiku
Publisher: CRC Press
ISBN: 9814669318
Category : Science
Languages : en
Pages : 706
Get Book Here
Book Description
GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III-V processing, with emphasis on HBTs. It is aimed at practicing
Author: Osamu Ueda
Publisher: Artech House Publishers
ISBN:
Category : Science
Languages : en
Pages : 376
Get Book Here
Book Description
In developing III-V optical devices for use in optical fiber communication systems, digital-audio systems, and optical printers, reliability is paramount. Understanding the origins and causes of degradation is critical to successful design. This unique book focuses specifically on helping researchers and engineers involved in III-V compound semiconductor thin film growth and processing better understand the mechanism of degradation and details the major degradation modes of optical devices fabricated from three different systems. The book explains the character of defects and imperfections induced during material growth and fabrication, presents techniques for failure analysis, and describes methods for elimination of defect-generating mechanisms. More than 200 illustrations and 40 equations help clarify important concepts.
Author: H. Hasegawa
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 328
Get Book Here
Book Description
Compound semiconductors, such as GaAs and InP, typically have relatively high surface recombination velocities compared to silicon, and are subject to disruption of the surface during device processing. These two themes formed the basis for the April 1999 symposium. The 34 papers are divided into five broad topics areas: fundamentals of surfaces and their passivation, novel approaches for surface passivation and device processing, the structural, transport and optical properties of oxides, compound semiconductor surface passivation and novel device processing, and electronic devices and processing. Annotation copyrighted by Book News, Inc., Portland, OR
Author: Ayse Erol
Publisher: Springer Science & Business Media
ISBN: 3540745297
Category : Technology & Engineering
Languages : en
Pages : 607
Get Book Here
Book Description
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Author: Anthony C. Jones
Publisher: John Wiley & Sons
ISBN: 3527614621
Category : Science
Languages : en
Pages : 352
Get Book Here
Book Description
Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.
Author: S. Ashok
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 1176
Get Book Here
Book Description
Proceedings of the San Francisco meeting of April-May 1992. Papers emphasize deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. Topics include: defects in bulk crystals, and in thin films; defect characterization; hydrogen interaction; processing induction of defects; quantum wells; ion implantation. Annotation copyright by Book News, Inc., Portland, OR
Author:
Publisher: Academic Press
ISBN: 0128019409
Category : Technology & Engineering
Languages : en
Pages : 458
Get Book Here
Book Description
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors
Author:
Publisher:
ISBN:
Category : Military research
Languages : en
Pages : 424
Get Book Here
Book Description
