Through Silicon Vias Process Integration with Concentration on a Diffusion Barrier, Backside Processing, and Electrical Characteristics PDF Download
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Author: Jitendra Patel
Publisher:
ISBN:
Category : Electronic packaging
Languages : en
Pages : 154
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Book Description
Author: Jitendra Patel
Publisher:
ISBN:
Category : Electronic packaging
Languages : en
Pages : 154
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Book Description
Author: Philip Garrou
Publisher: John Wiley & Sons
ISBN: 352762306X
Category : Technology & Engineering
Languages : en
Pages : 798
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Book Description
The first encompassing treatise of this new, but very important field puts the known physical limitations for classic 2D electronics into perspective with the requirements for further electronics developments and market necessities. This two-volume handbook presents 3D solutions to the feature density problem, addressing all important issues, such as wafer processing, die bonding, packaging technology, and thermal aspects. It begins with an introductory part, which defines necessary goals, existing issues and relates 3D integration to the semiconductor roadmap of the industry. Before going on to cover processing technology and 3D structure fabrication strategies in detail. This is followed by fields of application and a look at the future of 3D integration. The contributions come from key players in the field, from both academia and industry, including such companies as Lincoln Labs, Fraunhofer, RPI, ASET, IMEC, CEA-LETI, IBM, and Renesas.
Author: F. Roozeboom
Publisher: The Electrochemical Society
ISBN: 1566778638
Category : Science
Languages : en
Pages : 377
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Book Description
This issue of ECS Transactions covers emerging materials, process and technology options for large-area silicon wafers to enhance advanced IC performance or to enable revolutionary device structures with entirely new functionalities. Topics : high-mobility channel materials, (e.g. strained Si/Ge, compound semiconductors and graphene), high-performance gate stacks and low-resistivity junctions and contacts on new, Si-compatible materials; new materials and processes for 3-D (TSV) integration ; synthesis of nano-structures including wires, pores and membranes of Si-compatible materials; novel MEMS/NEMS structures and their integration with the mainstream Si-IC technology.
Author: Gowtham Veerabhadra Vangara
Publisher:
ISBN:
Category : Electronic packaging
Languages : en
Pages : 212
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Book Description
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 312
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Book Description
"Education, arts and social sciences, natural and technical sciences in the United States and Canada".
Author: Andreas Munding
Publisher: Cuvillier Verlag
ISBN: 3736924062
Category : Technology & Engineering
Languages : en
Pages : 138
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Book Description
3D-integration, or vertical chip integration, is a technology that aims to shorten the interconnect path between integrated circuits and to increase the interconnect density by using through-chip micro vias. It allows a smaller ciruit footprint by chip-stacking and can combine a variety of technologies. This thesis treats the technologigal aspects of a novel 3D-integration concept, which is based on processes that follow the sequence: wafer thinning, via processing, chip stacking. The micro vias are processed from the backside and therefore do not impose routing restrictions on the front side of the circuit. As an example application, the two key elements, the micro vias and the micro joints are formed on bare silicon substrate. It is shown how an electrical interconnect path from the top to the bottom of a mechanically sound chip stack can be realized. The process of stacking employs a solder based bonding method, which results in a rigid and thermally stable connection. By solid-liquid interdiffusion (isothermal solidification) the solder filled connection zone is entirely transformed into intermetallic compounds. This results in a homogenized and rigid joint with excellent mechanical properties, suitable for step by step stack building. Further, the scaling of microjoints in such 3-dimensional chip-stacks is proposed by means of kinetic control. Therefore, phase growth in the copper-tin system in the presence of various metal barriers at the interface is evaluated. Promising results have been obtained by using layers of Ti, Ta, Ti:W or combilayers thereof in a thickness range of 20 to 50 nm. These results suggest a miniaturization potential of solder based microjoints down to the scale of 1 µm, along with the respective increase in interconnect density.
Author: John H. Lau
Publisher: McGraw Hill Professional
ISBN: 0071785159
Category : Technology & Engineering
Languages : en
Pages : 513
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Book Description
A comprehensive guide to TSV and other enabling technologies for 3D integration Written by an expert with more than 30 years of experience in the electronics industry, Through-Silicon Vias for 3D Integration provides cutting-edge information on TSV, wafer thinning, thin-wafer handling, microbumping and assembly, and thermal management technologies. Applications to highperformance, high-density, low-power-consumption, wide-bandwidth, and small-form-factor electronic products are discussed. This book offers a timely summary of progress in all aspects of this fascinating field for professionals active in 3D integration research and development, those who wish to master 3D integration problem-solving methods, and anyone in need of a low-power, wide-bandwidth design and high-yield manufacturing process for interconnect systems. Coverage includes: Nanotechnology and 3D integration for the semiconductor industry TSV etching, dielectric-, barrier-, and seed-layer deposition, Cu plating, CMP, and Cu revealing TSVs: mechanical, thermal, and electrical behaviors Thin-wafer strength measurement Wafer thinning and thin-wafer handling Microbumping, assembly, and reliability Microbump electromigration Transient liquid-phase bonding: C2C, C2W, and W2W 2.5D IC integration with interposers 3D IC integration with interposers Thermal management of 3D IC integration 3D IC packaging
Author: Charles P. Marsden
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 476
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Book Description
The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).
Author: Tengfei Jiang
Publisher:
ISBN:
Category :
Languages : en
Pages : 320
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Book Description
Copper (Cu) Through-silicon via (TSV) is a key enabling element that provides the vertical connection between stacked dies in three-dimensional (3D) integration. The thermal expansion mismatch between Cu and Si induces complex stresses in and around the TSV structures, which can degrade the performance and reliability of 3DICs and are key concerns for technology development. In this dissertation, the effects of Cu microstructure and processing conditions on the stress characteristics and reliability of the TSV structure are studied. First, the stress characteristics of Cu TSV structures are investigated using the substrate curvature method. The substrate curvature measurement was supplemented by microstructure and finite element analyses (FEA) to investigate the mechanisms for the linear and nonlinear stress-temperature behaviors observed for the TSV structure. Implications of the near surface stress on carrier mobility change and device keep-out zone (KOZ) are discussed. Second, via extrusion, an important yield and reliability issue for 3D integration, is analyzed. Synchrotron x-ray microdiffraction technique was introduced for direct measurements of local stress and material behaviors in and around the TSV. Local plasticity near the top of the via was observed which provided direct experimental evidence to support the plasticity mechanism of via extrusion. An analytical model and FEA were used to analyze via extrusion based on local plasticity. Next, the effect of Cu microstructure effect on the thermomechanical behaviors of TSVs is investigated. The contribution from grain boundary and interfacial diffusion on via extrusion and the relaxation mechanisms are discussed. Potential approaches to minimize via extrusion are proposed. Finally, the stress characteristics of 3D die stack structures are studied using synchrotron x-ray microdiffraction. High resolution stress mappings were performed and verified by finite element analysis (FEA). FEA was further developed to estimate the stress effect on device mobility changes and the warpage of the integrated structure.
Author: Ehrenfried Zschech
Publisher: American Institute of Physics
ISBN: 9780735409385
Category : Science
Languages : en
Pages : 0
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Book Description
Scientist and engineers as well as graduate students in the fields of This conference will be of interest to anyone involved in Physics, Electrical Engineering, Materials Science and Engineering, Reliability and Quality Management, both in industry and academia. One current challenge to micro- and nanoelectronics is the understanding of stress-related phenomena in 3D IC integration. Stresses arising in 3D TSV interconnects and in the surrounding materials due to thermal mismatch, microstructure changes or process integration can lead to performance reduction, reliability-limiting degradation and failure of microelectronic products. Understanding stress-related phenomena in new materials used for 3D integration and packaging, particularly using through silicon vias and microbumps, is critical for future microelectronic products. Management of mechanical stress is one of the key enablers for the successful implementation of 3D-integrated circuits using through silicon vias (TSVs). The potential stress-related impact of the 3D integration process on the device characteristics must be understood and shared, and designers need a solution for managing stress. The Proceedings summarize new research results and advances in basic understanding of stress-induced phenomena in 3D IC integration. Modelling and simulation capabilities as well as materials characterization are demonstrated to evaluate the effect of stress on product performance.
