Thin Films of Ferro-magnetic and Ferro-electric Materials PDF Download
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Author: Zohra Nazir Kayani
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659749223
Category :
Languages : en
Pages : 252
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Book Description
This project is concerned with preparation and characterization of thin films of ferromagnetic and ferroelectric materials and then their testing in devices to be used in various electronic applications. The objective of the research on ferromagnetic and ferroelectric materials is intended towards developing new materials for the memory devices so that their storage capacity can be enhanced. Ferroelectrics has ability to change mechanical energy to electrical energy and vice versa. This finds their application in transducer application. They possess high dielectric permittivity finding application in capacitors. Memory devices are not only used in computers rather these are also used in cell phones, digital watches, credit cards and digital cameras. Since the current interest in memory devices is to enhance their capacity while reducing the size, a part of the project is to look into various new materials for future memories. Apart from the ongoing research on memory devices, a lot of research was focused onto display devices as well. Since the display devices (monitors, crts) usually take up a lot of space inhibiting the overall reduction of the devices, so in the current project
Author: Zohra Nazir Kayani
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659749223
Category :
Languages : en
Pages : 252
Get Book Here
Book Description
This project is concerned with preparation and characterization of thin films of ferromagnetic and ferroelectric materials and then their testing in devices to be used in various electronic applications. The objective of the research on ferromagnetic and ferroelectric materials is intended towards developing new materials for the memory devices so that their storage capacity can be enhanced. Ferroelectrics has ability to change mechanical energy to electrical energy and vice versa. This finds their application in transducer application. They possess high dielectric permittivity finding application in capacitors. Memory devices are not only used in computers rather these are also used in cell phones, digital watches, credit cards and digital cameras. Since the current interest in memory devices is to enhance their capacity while reducing the size, a part of the project is to look into various new materials for future memories. Apart from the ongoing research on memory devices, a lot of research was focused onto display devices as well. Since the display devices (monitors, crts) usually take up a lot of space inhibiting the overall reduction of the devices, so in the current project
Author: Alexander Tagantsev
Publisher: Springer Science & Business Media
ISBN: 144191417X
Category : Science
Languages : en
Pages : 828
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Book Description
At present, the marketplace for professionals, researchers, and graduate students in solid-state physics and materials science lacks a book that presents a comprehensive discussion of ferroelectrics and related materials in a form that is suitable for experimentalists and engineers. This book proposes to present a wide coverage of domain-related issues concerning these materials. This coverage includes selected theoretical topics (which are covered in the existing literature) in addition to a plethora of experimental data which occupies over half of the book. The book presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observations of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. "Domains in Ferroic Crystals and Thin Films" covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In other textbooks on solid state physics, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In contrast, "Domains in Ferroic Crystals and Thin Films" concentrates on domain-related phenomena in nonmagnetic ferroics. These materials are still inadequately represented in solid state physics textbooks and monographs.
Author: Masanori Okuyama
Publisher: Springer Science & Business Media
ISBN: 9783540241638
Category : Computers
Languages : en
Pages : 272
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Book Description
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Author: Devajyoti Mukherjee
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
ABSTRACT: Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling the magnetic and electric properties of two materials, generally a ferromagnetic material and a ferroelectric material via strain. In this work, horizontal heterostructures of composite multiferroic materials were grown and characterized using pulsed laser ablation technique. Alternate magnetic and ferroelectric layers of cobalt ferrite and lead zirconium titanate, respectively, were fabricated and the coupling effect was studied by X-ray stress analysis. It was observed that the interfacial stress played an important role in the coupling effect between the phases. Doped zinc oxide (ZnO) heterostructures were also studied where the ferromagnetic phase was a layer of manganese doped ZnO and the ferroelectric phase was a layer of vanadium doped ZnO. For the first time, a clear evidence of possible room temperature magneto-elastic coupling was observed in these heterostructures. This work provides new insight into the stress mediated coupling mechanisms in composite multiferroics.
Author: R. Ramesh
Publisher: Springer Science & Business Media
ISBN: 146156185X
Category : Technology & Engineering
Languages : en
Pages : 250
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Book Description
The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have been in use since the second world war. In the late sixties and seventies, a considerable amountofresearch and development effort was made to create a solid state nonvolatile memory using ferroelectrics in a vary simple matrix-addressed scheme. These attempts failed primarily due to problems associated with either the materials ordue to device architectures. The early eighties saw the advent of new materials processing approaches, such as sol-gel processing, that enabled researchers to fabricate sub-micron thin films of ferroelectric materials on a silicon substrate. These pioneering developments signaled the onsetofa revival in the areaofferroelectric thin films, especially ferroelectric nonvolatile memories. Research and development effort in ferroelectric materials and devices has now hit a feverish pitch, Many university laboratories, national laboratories and advanced R&D laboratories oflarge IC manufacturers are deeply involved in the pursuit of ferroelectric device technologies. Many companies worldwide are investing considerable manpower and resources into ferroelectric technologies. Some have already announced products ranging from embedded memories in micro controllers, low density stand-alone memories, microwave circuit elements, andrf identification tags. There is now considerable optimism that ferroelectric devices andproducts will occupy a significant market-share in the new millennium.
Author: Karin M. Rabe
Publisher: Springer Science & Business Media
ISBN: 3540345914
Category : Technology & Engineering
Languages : en
Pages : 395
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Book Description
The past two decades have witnessed revolutionary breakthroughs in the understanding of ferroelectric materials, both from the perspective of theory and experiment. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory.
Author: Masanori Okuyama
Publisher: Springer
ISBN: 9783540806295
Category : Science
Languages : en
Pages : 244
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Book Description
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Author: Inamuddin
Publisher: John Wiley & Sons
ISBN: 1394238177
Category : Technology & Engineering
Languages : en
Pages : 356
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Book Description
FERROIC MATERIALS-BASED TECHNOLOGIES The book addresses the prospective, relevant, and original research developments in the ferroelectric, magnetic, and multiferroic fields. Ferroic materials have sparked widespread attention because they represent a broad spectrum of elementary physics and are employed in a plethora of fields, including flexible memory, enormous energy harvesting/storage, spintronic functionalities, spin caloritronics, and a large range of other multi-functional devices. With the application of new ferroic materials, strong room-temperature ferroelectricity with high saturation polarization may be established in ferroelectric materials, and magnetism with significant magnetization can be accomplished in magnetic materials. Furthermore, magnetoelectric interaction between ferroelectric and magnetic orderings is high in multiferroic materials, which could enable a wide range of innovative devices. Magnetic, ferroelectric, and multiferroic 2D materials with ultrathin characteristics above ambient temperature are often expected to enable future miniaturization of electronics beyond Moore’s law for energy-efficient nanodevices. This book addresses the prospective, relevant, and original research developments in the ferroelectric, magnetic, and multiferroic fields. Audience The book will interest materials scientists, physicists, and engineers working in ferroic and multiferroic materials.
Author: Carlos Paz de Araujo
Publisher: Taylor & Francis US
ISBN: 9782884491976
Category : Science
Languages : en
Pages : 598
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Book Description
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Author: Mickaël Lallart
Publisher: BoD – Books on Demand
ISBN: 9533074531
Category : Science
Languages : en
Pages : 670
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Book Description
Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on the underlying mechanisms of ferroelectric materials, including general ferroelectric effect, piezoelectricity, optical properties, and multiferroic and magnetoelectric devices. The aim of this book is to provide an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric systems, allowing a deep understanding of the physical aspect of ferroelectricity.
