Theoretical Studies of Spin Dependent Transport Phenomena PDF Download
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Author: Christoph Michel
Publisher: Cuvillier Verlag
ISBN: 3867274851
Category : Electron transport
Languages : en
Pages : 205
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Book Description
Author: Christoph Michel
Publisher: Cuvillier Verlag
ISBN: 3867274851
Category : Electron transport
Languages : en
Pages : 205
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Book Description
Author: A. S. Sahakyan
Publisher:
ISBN: 9781536103007
Category : SCIENCE
Languages : en
Pages :
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Book Description
Author: Sadamichi Maekawa
Publisher: CRC Press
ISBN: 9781420024579
Category : Technology & Engineering
Languages : en
Pages : 296
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Book Description
In magnetic systems of nano-meter size, the interplay between spin and charge of electrons provides unique transport phenomena. In magnetic superlattices, magnetic and non-magnetic metallic thin films with thickness of the order of one nano-meter are piled-up alternately. Since the discovery of giant magnetoresistance (GMR) in these superlattices in 1988, spin dependent transport phenomena in magnetic nanostructures have received much attention from both academic and technological points of view. Ferromagnetic tunnel junctions made of ferromagnetic metal electrodes and a very thin insulating barrier between them are also of current interest as magnetoresistive devices, where the tunneling current depends on the relative orientation of magnetization (TMR). In addition to magnetic superlattices and magnetic tunnel junctions, magnetic granular systems and magnetic dots have been studied extensively as magnetoresistive systems. Edited by two of the world's leading authorities, Spin Dependent Transport in Magnetic Nanostructures introduces and explains the basic physics and applications of a variety of spin-dependent transport phenomena in magnetic nanostructures with particular emphasis on magnetic multilayers and magnetic tunnel junctions.
Author: Yang Song
Publisher:
ISBN:
Category :
Languages : en
Pages : 211
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Book Description
"A reliable theoretical framework is developed for spin-dependent transport in the presence of electron-phonon interactions. The centerpiece of the theory explores the symmetry of the studied systems and processes. In addition, microscopic kinetic processes are incorporated. Rigorous numerical methods are employed in order to verify our predictions. Applying the theory to potential key semiconductors for spintronics, such as silicon and germanium, and to the nascent material family of two-dimensional membranes, one obtains physical clarity as well as explicit analytical results. Following the construction of electronic and phonon states, we derive spin-dependent electronphonon scattering matrix elements for all processes induced by acoustic or optical phonons (including transparent derivations of important two-phonon processes in two-dimensional membranes), intravalley or intervalley scattering for multivalley conduction bands, and interband scattering for the gapless graphene. The resulting expressions are explicit functions of electron wavevectors, spin orientation, phonon modes and valley positions. Using the acquired insights, remarkable physical consequences are discovered. These include optimal spin transport in Si by combining strain and geometrical constrains, extremely long room-temperature spin lifetime in strained Ge when the spin is oriented parallel to a [111] strain (~1 [mu]s), and ultrafast electron spin relaxation in single-layer transition-metal dichalcogenides. By the unique properties of two-dimensional membranes inherited from their mirror symmetry and out-of-plane softness, we notice decoupling between spin and momentum transport due to scattering with out-of-plane acoustic phonons (the most populous branch). By symmetry analysis of orbital configurations, contrasting spin splitting and spin flip constants are predicted for the conduction bands of various single-layer transition-metal dichalcogenides. In addition to transport phenomena, we also apply the theory to optical excitation of hot excitons. Incorporating microscopic spin-flip results into Boltzmann transport equations, one can explore spin communication applications. Apart from spin relaxation, spin injection and detection are also key phases. We study tunnel-barrier profiles that are complicated by doping inhomogeneity, and quantify the limitations on the applied bias due to detrimental spin relaxation of hot electrons in zinc-blende semiconductors. Importantly, we elaborate dynamic signals of high-frequency devices, and noncollinear magnetization configurations of the electrodes to discuss optimal information density"--Page vii-viii.
Author: Henrik Smith
Publisher: Oxford University Press, USA
ISBN:
Category : Science
Languages : en
Pages : 458
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Book Description
This book introduces the concepts used to understand transport phenomena, which pervade all of physics. The focus is on the application of the statistical principles of kinetic theory to non-equilibrium situations, not only in the gas phase but also regarding plasmas, liquids, and solids. These powerful techniques are applied within the framework of the Boltzmann equation to a range of systems. The text is aimed at postgraduates and theoreticians, and assumes familiarity with the basic concepts of statistical mechanics and condensed matter physics. Beginning with the dilute classical gas, the authors then consider electron conduction in normal metals, insulators, superconductors and quantum liquids, and Bose liquids.
Author:
Publisher: Academic Press
ISBN: 012812296X
Category : Technology & Engineering
Languages : en
Pages : 1881
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Book Description
Comprehensive Nanoscience and Technology, Second Edition, Five Volume Set allows researchers to navigate a very diverse, interdisciplinary and rapidly-changing field with up-to-date, comprehensive and authoritative coverage of every aspect of modern nanoscience and nanotechnology. Presents new chapters on the latest developments in the field Covers topics not discussed to this degree of detail in other works, such as biological devices and applications of nanotechnology Compiled and written by top international authorities in the field
Author: Teruya Shinjo
Publisher: Elsevier
ISBN: 0080932169
Category : Science
Languages : en
Pages : 324
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Book Description
Spintronics is a newly developing area in the field of magnetism, in which the interplay of magnetism and transport phenomena is studied experimentally and theoretically. This book introduces the recent progresses in the research relating to spintronics. Presents in-depth analysis of this fascinating and technologically important new branch of nanoscience Edited text with contributions from acknowledged leaders in the field This handbook and guide will appeal to students and researchers in the fields of electronic devices and materials
Author: Alexandros Shailos
Publisher:
ISBN:
Category : Electron transport
Languages : en
Pages : 222
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Book Description
Author: Stephan Lowitzer
Publisher:
ISBN: 9783832526290
Category :
Languages : en
Pages : 0
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Book Description
Spintronics is an emerging technology that exploits the intrinsic spin of the electron and its associated magnetic moment in addition to its fundamental electronic charge. The central issue of this multidisciplinary field is the manipulation of the spin degree of freedom in solid-state systems. Discoveries in recent years have inspired a new route in spintronic research which needs no ferromagnetic components. The research field "spintronic without magnetism" is based on the possibility to manipulate electric currents via spin-orbit coupling only. The spin Hall effect (SHE) is one of the most promising effects for the generation of spin polarized currents which is even present in non-magnetic materials. The SHE appears when an electric current flows through a medium with spin-orbit coupling present, leading to a spin-current perpendicular to the charge current. In this work the SHE as well as the anomalous Hall effect (AHE) are investigated on a first principles level using the spin-polarized fully relativistic Korringa-Kohn-Rostoker Green's function method (SPR-KKR-GF) in conjunction with the linear response Kubo-Streda formalism. Intrinsic as well as extrinsic contributions to the SHE/AHE are treated on equal footing. This opened up for the first time the possibility to reliably decompose the SHE/AHE into skew and side-jump scattering as well as intrinsic contributions in a quantitative manner.
Author: Donglu Shi
Publisher: Springer
ISBN: 3540368728
Category : Science
Languages : en
Pages : 302
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Book Description
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