The Use of Optical Methods in Studies of Radiation Damage in Low Temperature Electron Irradiated Germanium PDF Download
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Author: Jerzy Piekoszewski
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Languages : en
Pages : 0
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Author: Jerzy Piekoszewski
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Category :
Languages : en
Pages : 0
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Category : Nuclear energy
Languages : en
Pages : 612
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Author: P. Baruch
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Category :
Languages : en
Pages : 58
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A detailed study of annealing states of n-type Germanium irradiated by electrons at low temperatures was performed through the use of stored energy measurements, photoconductivity, fast pulse annealing and conventional resistivity measurements. The effect of illumination on the annealing rate has been observed. It was found, mainly, that the 65K annealing stage kinetics suggest a rate limited process. No direct influence of the chemical nature of dopant impurities has been found. Illumination shifts this stage down to 20K, indicating that, through an electronic process, one element of the defect pair is mobile. Photoconductivity, effect of uniaxial stress and stored energy measurements was performed on Boron and Aluminum doped Silicon, irradiated between 4K and 300K by 1 to 3 MeV electrons. A level at 0.395 (Aluminum) or 0.430 (Boron) is introduced at room temperature as well as at 4.2K, and anneals around 300C. It is suggested that the defect is a boron interstitial with a trigonal symmetry. (Author).
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Category : Aeronautics
Languages : en
Pages : 1330
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Category : Military research
Languages : en
Pages : 572
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Author: J. Zizine
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Category :
Languages : en
Pages : 16
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The isothermal recovery of n-type germanium after irradiation by electrons at 20 degrees K is studied by electrical conductivity measurements around 65 degrees K. This study shows that the reaction involved in this temperature range is a diffusion controlled recombination of strongly correlated pairs, thus indicating close vacancy-interstitial pairs. The isochronal recovery of n-type germanium after irradiation by electrons at 20 degrees K is studied by Hall effect and resistivity measurements. Results are discussed.
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Category :
Languages : en
Pages : 570
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Author: United States. National Aeronautics and Space Administration Scientific and Technical Information Division
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Category : Aeronautics
Languages : en
Pages : 1440
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Author: United States. National Aeronautics and Space Administration. Scientific and Technical Information Division
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Category : Aeronautics
Languages : en
Pages : 1680
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Author: United States. Energy Research and Development Administration
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Category : Power resources
Languages : en
Pages : 936
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