The Role of Defect Complexes in the Magneto-Optical Properties of Rare Earth Doped Gallium Nitride PDF Download
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Author: Brandon Mitchell
Publisher:
ISBN: 9781321224597
Category :
Languages : en
Pages : 222
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Book Description
Wide band gap semiconductors doped with rare earth ions (RE) have shown great potential for applications in optoelectronics, photonics, and spintronics. The 1.54mum Erbium (Er) emission has been extensively utilized in optical fiber communications, and Europium (Eu) is commonly used as a red color component for LEDs and fluorescence lamps. For the realization of spintronic-type devices, a dilutely doped semiconductor that exhibits room temperature ferromagnetic behavior would be desirable. Such behavior has been observed in GaN:Er. Furthermore, it was demonstrated that strain may play an important role in the control of this ferromagnetism; however, this requires further investigation.
Author: Brandon Mitchell
Publisher:
ISBN: 9781321224597
Category :
Languages : en
Pages : 222
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Book Description
Wide band gap semiconductors doped with rare earth ions (RE) have shown great potential for applications in optoelectronics, photonics, and spintronics. The 1.54mum Erbium (Er) emission has been extensively utilized in optical fiber communications, and Europium (Eu) is commonly used as a red color component for LEDs and fluorescence lamps. For the realization of spintronic-type devices, a dilutely doped semiconductor that exhibits room temperature ferromagnetic behavior would be desirable. Such behavior has been observed in GaN:Er. Furthermore, it was demonstrated that strain may play an important role in the control of this ferromagnetism; however, this requires further investigation.
Author: Volkmar Dierolf
Publisher: Woodhead Publishing
ISBN: 008100060X
Category : Science
Languages : en
Pages : 472
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Book Description
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics
Author: Nathaniel T. Woodward
Publisher:
ISBN: 9781124657868
Category :
Languages : en
Pages : 186
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Book Description
Understanding the excitation mechanisms of rare earth ions in materials used for optoelectronic applications is key to achieving more efficient and versatile devices based on these material systems. Of particular importance to applications involving light emission is identifying the most efficient excitation pathways of the rare earth dopant. Such a task is complicated by the presence of multiple rare earth environments often observed in such materials which have the potential to have drastically different relative excitation characteristics. Furthermore, due to the recent interest in dilute ferromagnetic semiconductors, the three systems studied have shown to all exhibit room temperature ferromagnetic behavior. This has led to several questions on the mechanism behind the interaction of ions which cause the ferromagnetism, and by which our spectroscopic techniques allow for unique investigations.
Author: Robert David Armitage
Publisher:
ISBN:
Category :
Languages : en
Pages : 462
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Book Description
Author: Philip Aldam Shields
Publisher:
ISBN:
Category : Gallium compounds
Languages : en
Pages : 324
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Book Description
Author: Tiju Thomas
Publisher:
ISBN:
Category :
Languages : en
Pages : 158
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Book Description
Gallium Nitride is a III-V compound semiconductor that has attracted a lot of interest among both applied and basic researchers because of its potential applications in optoelectronic, high power and high frequency devices. However, many questions about the material remain unanswered. In this thesis, we will present our investigation of GaN. We will first describe an ammonothermal method for the synthesis of undoped and rare earth doped GaN powders. Using careful observations and calculations, we show that the powder growth is primarily a liquid phase phenomenon. We also present a chemical method to achieve luminescence enhancement in ammonothermally grown Eu:GaN powders. Based on arguments drawn from the surface chemistry and XRD of these samples, we conclude that elimination of dark mixed oxides from the powder results in the observed luminescence enhancement. We also demonstrate a nano Eu:GaN synthesis process using a simple mechanical topdown method. The optical properties of nano Eu:GaN prepared in this manner is comparable to that of the bulk material. Based on a similar mechanical process we synthesized nano Er:GaN powders that emit in the C band (1.55 m). The mechanism involved in the luminescence of rare earth doped GaN is investigated using thermal quenching and high pressure studies. Our results suggest that an exciton bound to rare earth structured isovalent impurity (RESI) is responsible for luminescence in these materials. Luminescence quenching and pressure dependent photoluminescence enhancement in RE:GaN can be explained based on this model. Our results clearly suggest that thermal quenching can be undone by application of pressure. These powders are discovered to be fairly radiation hard as well. In the last section of this thesis, we will present an electrophoretic technique to deposit nano GaN on a fluorine doped tin oxide coated glass substrate. The technique can be easily adapted to grow layered structures that can find application in optical fibers and as a laser gain medium. Preliminary results for highly densified GaN ceramic obtained using a hot-press process are discussed. These results suggest that further densification is necessary for achieving a completely transparent GaN ceramic made out of ammonothermally synthesized GaN powders.
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2540
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Book Description
Author: James H. Edgar
Publisher: Institution of Electrical Engineers
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 692
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Book Description
Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices.
Author: Stephen J. Pearton
Publisher: Springer Science & Business Media
ISBN: 1846283590
Category : Technology & Engineering
Languages : en
Pages : 383
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Book Description
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Author: Kevin Peter O'Donnell
Publisher: Springer Science & Business Media
ISBN: 9048128773
Category : Science
Languages : en
Pages : 366
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Book Description
This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
