The Properties of SiC Barrier Diodes Fabricated with Ti Schottky Contacts PDF Download
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Author: Krishna Chaitanya Kundeti
Publisher:
ISBN:
Category : Diodes, Schottky-barrier
Languages : en
Pages : 142
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Book Description
Titanium (Ti) is a popular metal contact used in fabricating Schottky barrier diodes on silicon carbide (SiC) semiconductor. In this research, Ti/4H-SiC Schottky barrier diodes have been fabricated to investigate the effect of deposition temperature and annealing on the electrical characteristics of the fabricated devices. The parameters such as barrier height, ideality factor and on-resistance were determined from the current-voltage (I-V) and the capacitance-voltage (C-V) measurements at room temperature. The temperature-dependent electrical characteristics are realized by performing current-voltage-temperature (I-V-T) measurements. Furthermore, the material characterizations were performed using Auger Electron Spectroscopy (AES) and x-ray diffraction (XRD) measurements. Thin films of Titanium (Ti) as Schottky contacts were deposited on n-type 4H-SiC substrate by magnetron sputtering at different temperatures form room temperature ~25 °C to 900 °C. In addition, thermal processing was performed by annealing at 500 °C in vacuum and argon environment up to 60 hours and characterized using I-V, C-V, and I-V-T measurements accordingly. The diodes with Ti deposited at 200 °C yield better devices with an average ideality factor of 1.04 and Schottky barrier height of 1.13 eV. The electrical properties shows that the deposition of Schottky contact should be at least below 700 °C and the Schottky contact should be annealed at 500 °C for 12-36 hours in order to obtain acceptable quality of Schottky diode. We believe that these variations in the electrical properties are due to the change in the quality of interfacial layer. The variations in physical/compositional properties of Ti/SiC interface has been investigated using Auger electron spectroscopy and x-ray diffraction, which reveled mainly two kinds of phases: Ti5Si3 and Ti3SiC2 formed at the interfacial layer.
Author: Krishna Chaitanya Kundeti
Publisher:
ISBN:
Category : Diodes, Schottky-barrier
Languages : en
Pages : 142
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Book Description
Titanium (Ti) is a popular metal contact used in fabricating Schottky barrier diodes on silicon carbide (SiC) semiconductor. In this research, Ti/4H-SiC Schottky barrier diodes have been fabricated to investigate the effect of deposition temperature and annealing on the electrical characteristics of the fabricated devices. The parameters such as barrier height, ideality factor and on-resistance were determined from the current-voltage (I-V) and the capacitance-voltage (C-V) measurements at room temperature. The temperature-dependent electrical characteristics are realized by performing current-voltage-temperature (I-V-T) measurements. Furthermore, the material characterizations were performed using Auger Electron Spectroscopy (AES) and x-ray diffraction (XRD) measurements. Thin films of Titanium (Ti) as Schottky contacts were deposited on n-type 4H-SiC substrate by magnetron sputtering at different temperatures form room temperature ~25 °C to 900 °C. In addition, thermal processing was performed by annealing at 500 °C in vacuum and argon environment up to 60 hours and characterized using I-V, C-V, and I-V-T measurements accordingly. The diodes with Ti deposited at 200 °C yield better devices with an average ideality factor of 1.04 and Schottky barrier height of 1.13 eV. The electrical properties shows that the deposition of Schottky contact should be at least below 700 °C and the Schottky contact should be annealed at 500 °C for 12-36 hours in order to obtain acceptable quality of Schottky diode. We believe that these variations in the electrical properties are due to the change in the quality of interfacial layer. The variations in physical/compositional properties of Ti/SiC interface has been investigated using Auger electron spectroscopy and x-ray diffraction, which reveled mainly two kinds of phases: Ti5Si3 and Ti3SiC2 formed at the interfacial layer.
Author: Konstantinos Zekentes
Publisher: Materials Research Forum LLC
ISBN: 1945291850
Category : Technology & Engineering
Languages : en
Pages : 249
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Book Description
The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Author: Sai Bhargav Naredla
Publisher:
ISBN:
Category : Diodes, Schottky-barrier
Languages : en
Pages : 126
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Book Description
Molybdenum (Mo) is one of the metals categorized as refractory metal due to its thermal properties. For that reason, it is very attractive for high-temperature applications. This thesis covers the investigation of silicon carbide (SiC) Schottky diodes fabricated using Mo as the Schottky contact. The Mo Schottky contacts were deposited using magnetron sputtering on the n-type 4H-SiC. The temperature of the SiC substrates was varied from 25 °C to 900 °C. The electrical properties of the diodes were determined by current-voltage, capacitance-voltage and current-voltage-temperature measurements. Structural properties of Schottky contacts deposited at different temperatures were also characterized using x-ray diffraction spectroscopy. The results obtained reveal that the as-deposited diodes had energy barrier heights that ranged from 1.02 to 1.67 eV and ideality factors varying from 1.04 to 1.23. Contacts deposited at 600 °C produced the optimum property consisting of a barrier height of 1.34 eV and ideality factor of 1.05. The diodes were further thermally processed by keeping them exposed to 500 °C for 24 hours diodes in vacuum. From these, the barrier height ranging from 1.00 eV to 1.70 eV was obtained. The variation in electrical properties is explained as due to changes in crystal quality. Current-voltage temperature measurements to further characterize the electrical properties of diodes at different temperatures were performed. Contacts deposited at 500°C produced the largest Richardson's constant (A**) of 3.74 A/K-cm2 and a barrier height of 1.32 eV. Changes in ideality factors and barrier heights are observed due to the formation of interfacial silicide layers. X-ray diffraction results show the formation of MoSi2 and Mo5Si2
Author: Gary Lynn Harris
Publisher: IET
ISBN: 9780852968703
Category : Electronic books
Languages : en
Pages : 312
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Book Description
This well structured and fully indexed book helps to understand and fully characterize the SiC system.
Author:
Publisher: Academic Press
ISBN: 0080864503
Category : Technology & Engineering
Languages : en
Pages : 435
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Book Description
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
Author: George Gibbs
Publisher:
ISBN: 9781681176437
Category :
Languages : en
Pages : 284
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Book Description
Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Author: Rani S. Kummari
Publisher:
ISBN:
Category : Diodes, Schottky-barrier
Languages : en
Pages : 134
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Book Description
This research demonstrates how the deposition temperature of Schottky contacts on 4H-SiC affects the electrical and thermal properties of a Schottky diode. Several refractory metal borides are investigated for the contacts which are deposited at room temperature (20 °C) and high temperature (600 °C). The electrical properties of the diodes are characterized by using current-voltage (I-V) and capacitance-voltage (C-V) measurements. Thermal properties are investigated by using rapid thermal processor (RTP). Schottky contacts which are deposited at 600 °C produced better Schottky diodes with smaller ideality factors from 1.05 to 1.10), barrier heights from 0.94 to 1.15 eV, smaller resistances, and smaller current density in reverse bias conditions when compared to the contacts deposited at room temperature. These values remained stable after annealing in RTP at 600 °C for 20 minutes. The improved electrical properties and thermal stability of the diodes with contacts deposited at 600 °C are related to the removal of O2 from the boride/SiC interface, as revealed by the Rutherford backscattering spectroscopy (RBS) analysis. These results indicate improved electrical and thermal properties of boride/SiC Schottky contacts, making them attractive for high temperature applications.
Author: B.L. Sharma
Publisher: Springer Science & Business Media
ISBN: 146844655X
Category : Science
Languages : en
Pages : 379
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Book Description
The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 111
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Book Description
Author: Michael Shur
Publisher: World Scientific
ISBN: 9812773371
Category : Technology & Engineering
Languages : en
Pages : 342
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Book Description
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices OCo power switching Schottky diodes and high temperature MESFETs OCo are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. Contents: SiC Material Properties (G Pensl et al.); SiC Homoepitaxy and Heteroepitaxy (A S Bakin); Ohmic Contacts to SiC (F Roccaforte et al.); Silicon Carbide Schottky Barrier Diode (J H Zhao et al.); High Power SiC PiN Rectifiers (R Singh); Silicon Carbide Diodes for Microwave Applications (K Vassilevski); SiC Thyristors (M E Levinshtein et al.); Silicon Carbide Static Induction Transistors (G C DeSalvo). Readership: Technologists, scientists, engineers and graduate students working on silicon carbide or other wide band gap materials and devices."
