The Preparation and Characterization of RF Reactively Sputtered Nickel Zinc Ferrite Thin Films PDF Download
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Author: Thomas Lee Ritzdorf
Publisher:
ISBN:
Category : Metallic films
Languages : en
Pages : 164
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Book Description
Author: Thomas Lee Ritzdorf
Publisher:
ISBN:
Category : Metallic films
Languages : en
Pages : 164
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Book Description
Author: Jong-Kai Lin
Publisher:
ISBN:
Category :
Languages : en
Pages : 624
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Author: Geok Loo Chen
Publisher:
ISBN:
Category :
Languages : en
Pages : 226
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Author: Wade H. Shafer
Publisher: Springer Science & Business Media
ISBN: 1461534747
Category : Science
Languages : en
Pages : 421
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Book Description
Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 34 (thesis year 1989) a total of 13,377 theses titles from 26 Canadian and 184 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 34 reports theses submitted in 1989, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.
Author: Chengyea Leu
Publisher:
ISBN:
Category :
Languages : en
Pages : 638
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Author: Ting Wen
Publisher:
ISBN:
Category : Optoelectronics
Languages : en
Pages : 122
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Book Description
Zinc nitride thin films possess a small optical band gap with direct transition, low resistivity, high mobility and carrier concentration. Therefore, it may be suitable as an optoelectronic material for infrared sensors, smart windows and energy conversion devices. The objective of this work is to grow zinc nitride thin films using RF magnetron sputtering, understand its mechanical, optical, and electrical properties, and investigate its performance as light sensing devices. Synthesis and characterization of zinc nitride thin films has been investigated in this work. An RF magnetron sputtering deposition was employed to synthesize zinc nitride thin films using pure metal zinc target in either N2-Ar or N2-Ar-H2 mixtures. The microstructural, optical and electrical characterizations of the representative films were investigated with stylus profilometry, XRD, AFM, SEM, TEM, UV-VIS-NIR double beam spectrometry, and Hall effect measurement. The photoresponse of the zinc nitride photoconductors was also studied under the irradiation of white light and NIR light. The as-deposited zinc nitride thin films were relatively soft and densely packed with smooth surface. It possesses a narrow optical band gap in the NIR range with direct transition. The zinc nitride showed n-type conductivity with low resistivity and high carrier concentration. To study the RF discharge power effect, the zinc nitride thin films were synthesized at different discharge powers densities. With discharge power density increasing, the film deposition rate increased, and the zinc nitride films acquired better crystalline structure, smaller optical band gap and less oxygen contaminations. After thermal annealing at moderate temperatures in either air or O2, the annealed zinc nitride thin films were photoconductive under irradiation of both NIR light and white light. The largest photoresponse and fastest response times were measured at the room temperature for the zinc nitride thin films annealed at 300 degree in the air. Hydrogen inclusion can modify the electrical and optical properties of crystalline semiconductor films by introducing impurity donor states. The ZnNx:H films deposited in N2-Ar-H2 mixture acquired less oxygen contamination and higher relative nitrogen atom concentration than the ZnNx films deposited in N2-Ar mixture. The as-deposited ZnNx:H films showed a clear photonic behavior under white light irradiation, and the annealed ZnNx:H films exhibited a pronounced change in resistance under both white light and NIR light irradiation comparing to the annealed ZnNx films. This was the first time to report photoresponse of zinc nitride thin films fabricated by reactive sputtering method. The photoconductivity was gradually improved by optimization of deposition conditions, annealing conditions and film compositions.
Author: University of Minnesota. Graduate School
Publisher:
ISBN:
Category :
Languages : en
Pages : 80
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Author: Feng Shi
Publisher:
ISBN: 9789535100928
Category :
Languages : en
Pages :
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Author: 李榕峻
Publisher:
ISBN:
Category :
Languages : en
Pages : 158
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Author: Feng Shi
Publisher:
ISBN:
Category : Technology
Languages : en
Pages :
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Book Description
Preparation and Characterization of Dielectric Thin Films by RF Magnetron-Sputtering with (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 Ceramic Target.
