Author: Trupti Ranjan Lenka
Publisher: Bentham Science Publishers
ISBN: 9815238256
Category : Technology & Engineering
Languages : en
Pages : 358
Book Description
Nanoelectronic Devices and Applications presents reviews on recent advances in nanoelectronic device design and new directions for their practical use. The volume includes 16 edited chapters that cover novel material systems, band engineering, modelling and simulations, fabrication and characterization techniques, and their emerging applications. The discussions presented in this book are based on current understandings on innovations and future trends, and references are provided for advanced scholars. Chapter 1 presents an overview of recent innovations and future prospects in III-nitride semiconductor technologies for RF, power, digital and quantum applications. Chapter 2 reports new trends in GaN-based optical devices for sensing and micro-display applications. Chapter 3 shows current interests in nanophosphors and their utilizations in improving device performance of InGaN nanowire light-emitting diodes (LEDs). Recent studies on the effect of potential profile on the carrier transport in AlGaAs based double quantum well structures and their applications are presented in Chapter 4. The recent progress in high-electron-mobility transistors (HEMTs) is presented through Chapters 5, 6, and 7. A comprehensive review on β-Ga2O3 emphasizing material properties, growth approaches, and its applications for next-generation high-power nanoelectronics; the effect of dielectric layers on the characteristics of AlN/β-Ga2O3 HEMTs are presented in Chapter 8 and 9 respectively. Chapters 10-14 summarize the recent studies in field-effect transistors (FETs) adopting different materials and structures. Chapter 15 presents current research in 2D Tungsten Diselenide (WSe2) with special focus on the material properties, device structures, applications, and challenges. Finally, Chapter 16 presents a systematic review of memristors, and memristive semiconductor devices. The book is intended as a primary resource for elective subjects in advanced electronics and computer engineering courses at university level. Researchers and industry professionals will also learn about emerging trends and state-of-the-art research in nanoelectronics.
Nanoelectronic Devices and Applications
Author: Trupti Ranjan Lenka
Publisher: Bentham Science Publishers
ISBN: 9815238256
Category : Technology & Engineering
Languages : en
Pages : 358
Book Description
Nanoelectronic Devices and Applications presents reviews on recent advances in nanoelectronic device design and new directions for their practical use. The volume includes 16 edited chapters that cover novel material systems, band engineering, modelling and simulations, fabrication and characterization techniques, and their emerging applications. The discussions presented in this book are based on current understandings on innovations and future trends, and references are provided for advanced scholars. Chapter 1 presents an overview of recent innovations and future prospects in III-nitride semiconductor technologies for RF, power, digital and quantum applications. Chapter 2 reports new trends in GaN-based optical devices for sensing and micro-display applications. Chapter 3 shows current interests in nanophosphors and their utilizations in improving device performance of InGaN nanowire light-emitting diodes (LEDs). Recent studies on the effect of potential profile on the carrier transport in AlGaAs based double quantum well structures and their applications are presented in Chapter 4. The recent progress in high-electron-mobility transistors (HEMTs) is presented through Chapters 5, 6, and 7. A comprehensive review on β-Ga2O3 emphasizing material properties, growth approaches, and its applications for next-generation high-power nanoelectronics; the effect of dielectric layers on the characteristics of AlN/β-Ga2O3 HEMTs are presented in Chapter 8 and 9 respectively. Chapters 10-14 summarize the recent studies in field-effect transistors (FETs) adopting different materials and structures. Chapter 15 presents current research in 2D Tungsten Diselenide (WSe2) with special focus on the material properties, device structures, applications, and challenges. Finally, Chapter 16 presents a systematic review of memristors, and memristive semiconductor devices. The book is intended as a primary resource for elective subjects in advanced electronics and computer engineering courses at university level. Researchers and industry professionals will also learn about emerging trends and state-of-the-art research in nanoelectronics.
Publisher: Bentham Science Publishers
ISBN: 9815238256
Category : Technology & Engineering
Languages : en
Pages : 358
Book Description
Nanoelectronic Devices and Applications presents reviews on recent advances in nanoelectronic device design and new directions for their practical use. The volume includes 16 edited chapters that cover novel material systems, band engineering, modelling and simulations, fabrication and characterization techniques, and their emerging applications. The discussions presented in this book are based on current understandings on innovations and future trends, and references are provided for advanced scholars. Chapter 1 presents an overview of recent innovations and future prospects in III-nitride semiconductor technologies for RF, power, digital and quantum applications. Chapter 2 reports new trends in GaN-based optical devices for sensing and micro-display applications. Chapter 3 shows current interests in nanophosphors and their utilizations in improving device performance of InGaN nanowire light-emitting diodes (LEDs). Recent studies on the effect of potential profile on the carrier transport in AlGaAs based double quantum well structures and their applications are presented in Chapter 4. The recent progress in high-electron-mobility transistors (HEMTs) is presented through Chapters 5, 6, and 7. A comprehensive review on β-Ga2O3 emphasizing material properties, growth approaches, and its applications for next-generation high-power nanoelectronics; the effect of dielectric layers on the characteristics of AlN/β-Ga2O3 HEMTs are presented in Chapter 8 and 9 respectively. Chapters 10-14 summarize the recent studies in field-effect transistors (FETs) adopting different materials and structures. Chapter 15 presents current research in 2D Tungsten Diselenide (WSe2) with special focus on the material properties, device structures, applications, and challenges. Finally, Chapter 16 presents a systematic review of memristors, and memristive semiconductor devices. The book is intended as a primary resource for elective subjects in advanced electronics and computer engineering courses at university level. Researchers and industry professionals will also learn about emerging trends and state-of-the-art research in nanoelectronics.
Semiconductor Quantum Well Intermixing
Author: J. T. Lie
Publisher: CRC Press
ISBN: 9789056996895
Category : Science
Languages : en
Pages : 716
Book Description
Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure modifiations. Its comprehensive coverage of growth and pos-growth processing technologies along with its presentation of the various interesting and advanced features of the DFQW materials make this book an essential reference to the study of QW layer intermixing.
Publisher: CRC Press
ISBN: 9789056996895
Category : Science
Languages : en
Pages : 716
Book Description
Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure modifiations. Its comprehensive coverage of growth and pos-growth processing technologies along with its presentation of the various interesting and advanced features of the DFQW materials make this book an essential reference to the study of QW layer intermixing.
Research in Progress
Author:
Publisher:
ISBN:
Category : Military research
Languages : en
Pages : 302
Book Description
Publisher:
ISBN:
Category : Military research
Languages : en
Pages : 302
Book Description
Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors
Author: H. Q. Hou
Publisher: The Electrochemical Society
ISBN: 9781566771948
Category : Technology & Engineering
Languages : en
Pages : 664
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566771948
Category : Technology & Engineering
Languages : en
Pages : 664
Book Description
Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) [New Delhi]. 2(2000)
Author:
Publisher: Allied Publishers
ISBN: 9788170239987
Category :
Languages : en
Pages : 800
Book Description
Publisher: Allied Publishers
ISBN: 9788170239987
Category :
Languages : en
Pages : 800
Book Description
Selected Papers on Quantum Well Intermixing for Photonics
Author: E. Herbert Li
Publisher: SPIE-International Society for Optical Engineering
ISBN:
Category : Photography
Languages : en
Pages : 634
Book Description
SPIE Milestones are collections of seminal papers from the world literature covering important discoveries and developments in optics and photonics.
Publisher: SPIE-International Society for Optical Engineering
ISBN:
Category : Photography
Languages : en
Pages : 634
Book Description
SPIE Milestones are collections of seminal papers from the world literature covering important discoveries and developments in optics and photonics.
Nonlinear Photonics
Author: Yili Guo
Publisher: Chinese University Press
ISBN: 9789622018617
Category : Science
Languages : en
Pages : 436
Book Description
This book systematically discusses the nonlinearities in optics, optoelectronics and fiber communications. The theory of optical nonlinearity ties closely with the fiber communication technologies and the applied optoelectronics.
Publisher: Chinese University Press
ISBN: 9789622018617
Category : Science
Languages : en
Pages : 436
Book Description
This book systematically discusses the nonlinearities in optics, optoelectronics and fiber communications. The theory of optical nonlinearity ties closely with the fiber communication technologies and the applied optoelectronics.
Physics and Simulation of Optoelectronic Devices
Author:
Publisher:
ISBN:
Category : Optoelectronic devices
Languages : en
Pages : 854
Book Description
Publisher:
ISBN:
Category : Optoelectronic devices
Languages : en
Pages : 854
Book Description
Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 338
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 338
Book Description
Applications of Photonic Technology 3
Author: Society of Photo-optical Instrumentation Engineers
Publisher: Bellingham, Wash. : SPIE--The International Society for Optical Engineering
ISBN: 9780819429506
Category : Science
Languages : en
Pages : 1252
Book Description
This collection of papers from the International Conference on Applications of Photonic Technology includes articles on a variety of relevant issues and topics.
Publisher: Bellingham, Wash. : SPIE--The International Society for Optical Engineering
ISBN: 9780819429506
Category : Science
Languages : en
Pages : 1252
Book Description
This collection of papers from the International Conference on Applications of Photonic Technology includes articles on a variety of relevant issues and topics.