The Low Temperature Solution Growth of Thin-film Silicon and Silicon Germanium Alloys and Their Use in Photovoltaic Applications PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download The Low Temperature Solution Growth of Thin-film Silicon and Silicon Germanium Alloys and Their Use in Photovoltaic Applications PDF full book. Access full book title The Low Temperature Solution Growth of Thin-film Silicon and Silicon Germanium Alloys and Their Use in Photovoltaic Applications by Stephen A. Healy. Download full books in PDF and EPUB format.
Author: Stephen A. Healy
Publisher:
ISBN:
Category : Germanium
Languages : en
Pages : 210
Get Book Here
Book Description
Author: Stephen A. Healy
Publisher:
ISBN:
Category : Germanium
Languages : en
Pages : 210
Get Book Here
Book Description
Author: Gudrun Kissinger
Publisher: CRC Press
ISBN: 1466586648
Category : Science
Languages : en
Pages : 436
Get Book Here
Book Description
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 780
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 994
Get Book Here
Book Description
![The Low Temperature Oxidation Behavior of Si(1-[subscript X]) Ge[subscript X] Thin Films in a Fluorinated Ambient PDF](https://books.google.com/books/content/images/frontcover/xPViNwAACAAJ?fife=w80-h100)
Author: Stephen James Kilpatrick
Publisher:
ISBN:
Category : Germanium alloys
Languages : en
Pages : 560
Get Book Here
Book Description
Silicon germanium alloys have received considerable attention in recent years for their application in advanced high-speed electronic devices such as heterojunction bipolar transistors, as well as for their potential in optoelectronic devices. The oxidation behavior of this material, however, continues to be a troublesome issue which impedes its timely development. A two-pronged study has been completed which (1) introduces a low temperature, chemically enhanced oxidation process for Si$\rm \sb{1-x}$Ge$\rm\sb{x}$ and (2) furthers our understanding of the fundamental mechanisms of Si$\rm\sb{1-x},$ Ge$\rm\sb{x},$ oxidation. Epitaxial thin films of Si$\rm\sb{1-x}Ge\sb{x},$ x $\leq$ 0.23, on(100) Si have been oxidized in either a double-walled quartz furnace in an O$\sb2$ ambient with parts per million additions of NF$\sb3,$ or in an ultrahigh vacuum environment using O$\sb2$ with sophisticated in situ analysis by angle-resolved X-ray photoelectron spectroscopy.
Author: Peter Capper
Publisher: John Wiley & Sons
ISBN: 9780470319499
Category : Technology & Engineering
Languages : en
Pages : 464
Get Book Here
Book Description
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1148
Get Book Here
Book Description
Author: IEEE Electron Devices Society
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 1284
Get Book Here
Book Description
Foundations for the reality of a broadly based, large scale deployment of photovoltaics in commercial applications are described. Research, development, and applications experience and efforts are presented. Special sessions on the problems relating to financing, installing, and operating photovoltaic power generating systems are given. Production problems and techniques are described.
Author: Fong Chee Yong
Publisher: Penerbit USM
ISBN: 9674612947
Category : Science
Languages : en
Pages : 127
Get Book Here
Book Description
Wide direct band gap gallium nitride (GaN) semiconductor has received significant attention as an ideal material for various applications in the optoelectronic devices. One major use of GaN is the development of energy-efficient solid state light-emitting diodes. Currently, most commercially available GaN semiconductor are produced through advanced deposition techniques which involve sophisticated technologies and are relatively expensive and complicated to setup. As an alternative, the sol-gel spin coating method, which is relatively simpler, cheaper, safer, and more scalable was proposed. In this book, the process route and recipe for producing highly c-oriented crystalline GaN thin films via the sol-gel spin coating approach were described in detail. Some insights into the factors affecting the surface morphology as well as structural and optical properties of the deposited films were presented. Eventually, this book could inspire further studies into the development of low-cost GaN thin films.
Author: Yanying Li
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Crystalline germanium (Ge) structures, such as nanowires (NWs) and thin films, have been investigated intensively in recent years due to their unique properties emerging from germanium's large absorption coefficient, high carrier mobilities, lattice match with photovoltaic material GaAs, and compatibility with standard silicon-processing technology. The dynamics of electrons, photons, and phonons in crystalline Ge strongly depend on the geometrical factors of the different device structures in which it is fabricated. A better understanding of Ge growth mechanisms in different nano- and micro-structures, and their connection to fundamental optical and electronic properties is essential in order to better exploit Ge in the design of nanoscale optoelectronic devices. However, such investigations in semiconductor NWs and thin films are limited and have mainly focused on a small set of crystal growth processes. This thesis focuses on the investigations of both the synthesis and properties of two types of structures, NWs and poly-crystalline thin films. In order to achieve large-scale arrays of relatively defect-free vertically aligned NWs, it is essential to understand the spontaneous kinking during growth. In Chapter 2, two fundamental mechanisms underlying the spontaneous kinking of Ge NWs during vapor-liquid-solid (VLS) growth will be discussed. The diameter of NWs, sidewall facets of NWs, and the capillary stability of the Au-Ge catalyst droplet play important roles in spontaneous kinking. 3-D phase field model simulations by our collaborators are combined with experimental results to confirm the kinking mechanisms. The high electron and hole mobilities and high optical absorption in visible and IR wavelengths of Ge makes it a promising candidate for ultrafast optoelectronic device applications. There are few investigations of arrays of Ge NWs in this context, and most such studies have focused on a qualitative analysis of relevant phenomena. Chapter 3-5 will present a study of ultrafast optical, acoustic and electronic properties of vertically aligned 111 Ge NW arrays through ultrafast, optical pump-probe transient absorption measurements on dense arrays of single-crystal and relatively uniform-diameter Ge NWs. Two coexisting physical phenomena governing the spectral and temporal dependence of the detected probe signal will be discussed. In Chapter 4, ultrafast dynamics of electrons and holes, especially their strong dependence on NW diameters and photoexcitation powers, are investigated. The different interaction of electrons and holes with surface states of Ge NWs will be demonstrated, thereby leading to different methods to extend electron and hole lifetime in such nanostructures. Chapter 6 will first introduce a method to produce poly-crystalline Ge (poly-Ge) thin films via low-temperature Al-induced-crystallization. Electron backscatter diffraction (EBSD), Hall mobility, and photoluminescence (PL) measurements of the poly-Ge films and poly-GaAs films epitaxially deposited on these poly-Ge templates indicate that templates with relatively large Ge crystallites (up to 124 um2) are a low-cost alternative to single-crystal Ge wafers, albeit exhibiting somewhat reduced performance. The poly-Ge templates can function well for seeding epitaxial growth of overlying Ge nanostructures or GaAs thin film absorbers for application in photodetectors or solar cells.
