Author: M. A. Subhan
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The Hall Effect and the Associated Phenomena in Cadmium Sulphide
Author: M. A. Subhan
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Hall Effect Measurements on Cadmium Sulphide
Author: D. C. Shotton
Publisher:
ISBN:
Category :
Languages : en
Pages : 22
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 22
Book Description
Hall Effect Measurements in an Illuminated Cadmium Sulfide Crystal Sample
Author: Don G. Daugherty
Publisher:
ISBN:
Category : Cadmium
Languages : en
Pages : 120
Book Description
Publisher:
ISBN:
Category : Cadmium
Languages : en
Pages : 120
Book Description
Cadmium Sulfide
Author: Nick A. Komons
Publisher:
ISBN:
Category : Cadmium sulfide
Languages : en
Pages : 94
Book Description
Publisher:
ISBN:
Category : Cadmium sulfide
Languages : en
Pages : 94
Book Description
Development of A. C. Hall Effect Apparatus
Author: Donald R. Wells
Publisher:
ISBN:
Category :
Languages : en
Pages : 116
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 116
Book Description
The Hall Effect and Related Phenomena
Author: E. H. Putley
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 290
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 290
Book Description
Galvanomagnetic Effects in Cadmium Sulfide
Author: James David Zook
Publisher:
ISBN:
Category : Cadmium
Languages : en
Pages : 166
Book Description
Publisher:
ISBN:
Category : Cadmium
Languages : en
Pages : 166
Book Description
U.S. Government Research Reports
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1076
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1076
Book Description
Solid State Phenomena
Author: R. Lawrance
Publisher: Butterworth-Heinemann
ISBN: 1483225925
Category : Science
Languages : en
Pages : 57
Book Description
Solid State Phenomena explores the fundamentals of the structure and their influence on the properties of solids. This book is composed of five chapters that focus on the electrical and thermal conductivities of crystalline solids. Chapter 1 describes the nature of solids, particularly metals and crystalline materials. This chapter also presents a model to evaluate crystal structure, the forces between atom pairs, and the mechanism of plastic and elastic deformation. Chapter 2 demonstrates random vibrations of atoms in a solid using a one-dimensional array, while Chapter 3 examines the resistance of tungsten under various temperatures and measures its temperature coefficient of resistance. Chapter 4 surveys the increase in the number of conducting electrons in a solid when illuminated with light of sufficiently high photon energy to excite electrons out of filled valence bands. Chapter 5 considers the concept of diagmagnetism, paramagnetism, and ferromagnetism in solids.
Publisher: Butterworth-Heinemann
ISBN: 1483225925
Category : Science
Languages : en
Pages : 57
Book Description
Solid State Phenomena explores the fundamentals of the structure and their influence on the properties of solids. This book is composed of five chapters that focus on the electrical and thermal conductivities of crystalline solids. Chapter 1 describes the nature of solids, particularly metals and crystalline materials. This chapter also presents a model to evaluate crystal structure, the forces between atom pairs, and the mechanism of plastic and elastic deformation. Chapter 2 demonstrates random vibrations of atoms in a solid using a one-dimensional array, while Chapter 3 examines the resistance of tungsten under various temperatures and measures its temperature coefficient of resistance. Chapter 4 surveys the increase in the number of conducting electrons in a solid when illuminated with light of sufficiently high photon energy to excite electrons out of filled valence bands. Chapter 5 considers the concept of diagmagnetism, paramagnetism, and ferromagnetism in solids.
Contact Properties and Related Conduction Phenomena in Insulating Cadmium Sulfide
Author: Eric Léon Anne Courtens
Publisher:
ISBN:
Category : Cadmium sulfide
Languages : en
Pages : 195
Book Description
The static distribution of the electric field in thin insulating crystals of DcS provided with various electrodes was investigated. It was found that, when non-injecting electrodes were used, contact barriers were formed which have the nature of the usual Schottky barriers known to exist on high-conductivity CdS. The square of the barrier thickness is linear in the applied voltage, and the barrier potential is related to the metal work-function, the electron affinity of CdS, and the Fermi level depth, as predicted by the simplest contact theory, without having to resort to surface states. The barrier thickness, which for insulators cannot be measured by any of the standard semiconductor procedures, was derived from the measurement of a fast-pulse photoeffect. A pulse photoeffect model was developed that successfully explains the results in terms of contact barriers. The barrier space-charge density can be related to the bulk density of centers. The barrier photoeffect model in CdS is dependent on the presence of native defects of relatively high density and electron cross-section. The properties of these centers are in agreement with previous reports. Slow sensitizing centers were also investigated, and their cross-section is in good agreement with previously-reported values. The results indicate how to prepare contacts that approach the flat band condition. This is shown to be important for accurate resistivity measurements on thin crystals. (Author).
Publisher:
ISBN:
Category : Cadmium sulfide
Languages : en
Pages : 195
Book Description
The static distribution of the electric field in thin insulating crystals of DcS provided with various electrodes was investigated. It was found that, when non-injecting electrodes were used, contact barriers were formed which have the nature of the usual Schottky barriers known to exist on high-conductivity CdS. The square of the barrier thickness is linear in the applied voltage, and the barrier potential is related to the metal work-function, the electron affinity of CdS, and the Fermi level depth, as predicted by the simplest contact theory, without having to resort to surface states. The barrier thickness, which for insulators cannot be measured by any of the standard semiconductor procedures, was derived from the measurement of a fast-pulse photoeffect. A pulse photoeffect model was developed that successfully explains the results in terms of contact barriers. The barrier space-charge density can be related to the bulk density of centers. The barrier photoeffect model in CdS is dependent on the presence of native defects of relatively high density and electron cross-section. The properties of these centers are in agreement with previous reports. Slow sensitizing centers were also investigated, and their cross-section is in good agreement with previously-reported values. The results indicate how to prepare contacts that approach the flat band condition. This is shown to be important for accurate resistivity measurements on thin crystals. (Author).