Author: Wai Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 316
Book Description
The Fabrication of InGaAs/InAlAs/InP Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy
Author: Wai Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 316
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 316
Book Description
InP-Based Materials and Devices
Author: Osamu Wada
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 616
Book Description
A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: * Basic materials physics involved in a wide range of InP-based compounds. * Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. * Hetero-interface control and dry process techniques for device fabrication. * High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. * Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. * Optoelectronic integration and packing for functional, low-cost modules.
Publisher: Wiley-Interscience
ISBN:
Category : Science
Languages : en
Pages : 616
Book Description
A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: * Basic materials physics involved in a wide range of InP-based compounds. * Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. * Hetero-interface control and dry process techniques for device fabrication. * High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. * Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. * Optoelectronic integration and packing for functional, low-cost modules.
InP/InGaAs Heterojunction Bipolar Transistors Grown on Ge/P Co-implanted InP Substrates by Metal-Organic Molecular Bean Epitaxy
Author: W. J. Sung
Publisher:
ISBN:
Category :
Languages : en
Pages : 3
Book Description
InP/InGaAs Heterojunction Bipolar Transistors (HBTs) have demonstrated excellent high- frequency performance 1-4 and are widely used for optical fiber transmission 5-7. However; the current mesa HBT structure utilizes a very thick, highly doped n+InGaAs layer for the subcollector contact. This added mesa height makes multilevel interconnection processes more difficult, which impedes the capability of fabricating compact integrated circuits. In addition, rip has a much higher thermal conductivity than InGaAs, so heat dissipation may be a problem for densely packed circuits with the above structure. This paper reports on InP/InGaAs HBTs grown on Ge/P co-implanted substrates by Metal-Organic Molecular Beam Epitaxy (MOMBE). This embedded subcollector HBT structure offers several advantages for the fabrication of large-scale integrated circuits on InP substrates.
Publisher:
ISBN:
Category :
Languages : en
Pages : 3
Book Description
InP/InGaAs Heterojunction Bipolar Transistors (HBTs) have demonstrated excellent high- frequency performance 1-4 and are widely used for optical fiber transmission 5-7. However; the current mesa HBT structure utilizes a very thick, highly doped n+InGaAs layer for the subcollector contact. This added mesa height makes multilevel interconnection processes more difficult, which impedes the capability of fabricating compact integrated circuits. In addition, rip has a much higher thermal conductivity than InGaAs, so heat dissipation may be a problem for densely packed circuits with the above structure. This paper reports on InP/InGaAs HBTs grown on Ge/P co-implanted substrates by Metal-Organic Molecular Beam Epitaxy (MOMBE). This embedded subcollector HBT structure offers several advantages for the fabrication of large-scale integrated circuits on InP substrates.
InP/InGaAs Heterojunction Bipolar Transistors and Field Effect Transistors Grown by Gas-source Molecular Beam Epitaxy
Author: Hao-Chung Kuo
Publisher:
ISBN:
Category :
Languages : en
Pages : 190
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 190
Book Description
InGaAs-InAIAs N-P-N Double Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy
Author: Pui Leng Lam
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Growth and Characterization of High-speed C-doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy
Author: Sunil Thomas
Publisher:
ISBN:
Category :
Languages : en
Pages : 174
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 174
Book Description
Carbon-doped InP/InGaAs Heterojunction Bipolar Transistors for High Speed Applications
Author: Russell C. Gee
Publisher:
ISBN:
Category :
Languages : en
Pages : 270
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 270
Book Description
Development of a Fabrication Process for InP/InGaAs Based Heterojunction Bipolar Transistors
Author: Matthew Jon Soucek
Publisher:
ISBN:
Category :
Languages : en
Pages : 364
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 364
Book Description
InP HBTs
Author: B. Jalali
Publisher: Artech House Materials Science
ISBN:
Category : Science
Languages : en
Pages : 440
Book Description
This work provides a comprehensive overview of current InP HBT technology and its applications. Each chapter is written by a world-renowned expert on topics including crystal growth, processing, physics, modelling, and digital and analog circuits.
Publisher: Artech House Materials Science
ISBN:
Category : Science
Languages : en
Pages : 440
Book Description
This work provides a comprehensive overview of current InP HBT technology and its applications. Each chapter is written by a world-renowned expert on topics including crystal growth, processing, physics, modelling, and digital and analog circuits.
The Fabrication and Characterization of InGaAs/InAlAs Heterojunction Bipolar Transistors
Author: Wai Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 232
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 232
Book Description