The Effect of Cooling on the Growth of Rare Earth Silicides on Silicon and the Growth of Overlayers on 2D Ho Silicide Studied Using MEIS and STM PDF Download
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Author: Michael Brian Reakes
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Michael Brian Reakes
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 372
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Author: Alexander A. Demkov
Publisher: Springer Science & Business Media
ISBN: 146149320X
Category : Technology & Engineering
Languages : en
Pages : 284
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This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.
Author:
Publisher:
ISBN:
Category : Metals at high temperatures
Languages : en
Pages : 140
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Author: Chua Soo-Jin
Publisher: CRC Press
ISBN: 9814310441
Category : Science
Languages : en
Pages : 230
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This proceeding is a collection of selected papers presented at Symposium O of Compound Semiconductor Photonics in the International Conference on Materials for Advanced Technology (ICMAT), which was held in Singapore from 28 June to 3 July 2009. The symposium covers a wide range of topics from fundamental semiconductor materials study to photonic device fabrication and application. The papers collected are of recent progress in the active and wide range of semiconductor photonics research. They include materials-related papers on III-As/P, III-nitride, quantum dot/wire/dash growth, ZnO, and chalcogenide, and devices-related papers on photonic crystals, VCSEL, quantum dot/dash lasers, LEDs, waveguides, solar cells and heterogeneous integrat
Author: Charles A. Evans
Publisher: Gulf Professional Publishing
ISBN: 9780750691680
Category : Science
Languages : en
Pages : 784
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Book Description
"This is a comprehensive volume on analytical techniques used in materials science for the characterization of surfaces, interfaces and thin films. This flagship volume is a unique, stand-alone reference for materials science practitioners, process engineers, students and anyone with a need to know about the capabilities available in materials analysis. An encyclopedia of 50 concise articles, this book will also be a practical companion to the forthcoming books in the series."--Knovel.
Author: National Research Council (U.S.). Committee on Coatings
Publisher: National Academies
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 236
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Author: Tapan Gupta
Publisher: Springer Science & Business Media
ISBN: 1441900764
Category : Technology & Engineering
Languages : en
Pages : 433
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Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.
Author: D. Keith Bowen
Publisher: CRC Press
ISBN: 1420005650
Category : Technology & Engineering
Languages : en
Pages : 296
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Book Description
The scales involved in modern semiconductor manufacturing and microelectronics continue to plunge downward. Effective and accurate characterization of materials with thicknesses below a few nanometers can be achieved using x-rays. While many books are available on the theory behind x-ray metrology (XRM), X-Ray Metrology in Semiconductor Manufacturing is the first book to focus on the practical aspects of the technology and its application in device fabrication and solving new materials problems. Following a general overview of the field, the first section of the book is organized by application and outlines the techniques that are best suited to each. The next section delves into the techniques and theory behind the applications, such as specular x-ray reflectivity, diffraction imaging, and defect mapping. Finally, the third section provides technological details of each technique, answering questions commonly encountered in practice. The authors supply real examples from the semiconductor and magnetic recording industries as well as more than 150 clearly drawn figures to illustrate the discussion. They also summarize the principles and key information about each method with inset boxes found throughout the text. Written by world leaders in the field, X-Ray Metrology in Semiconductor Manufacturing provides real solutions with a focus on accuracy, repeatability, and throughput.
Author: Albert Feldman
Publisher:
ISBN:
Category : Laser materials
Languages : en
Pages : 76
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Book Description
