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Author: Boyan Mutaftschiev
Publisher: Springer Science & Business Media
ISBN: 3662045915
Category : Science
Languages : en
Pages : 370
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Book Description
This textbook is for graduate students and young scientists, who are looking for an introduction to the physics and physical chemistry of crystal growth and nucleation phenomena.
Author: Boyan Mutaftschiev
Publisher: Springer Science & Business Media
ISBN: 3662045915
Category : Science
Languages : en
Pages : 370
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Book Description
This textbook is for graduate students and young scientists, who are looking for an introduction to the physics and physical chemistry of crystal growth and nucleation phenomena.
Author: Tatau Nishinaga
Publisher: Elsevier
ISBN: 0444593764
Category : Science
Languages : en
Pages : 1216
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Book Description
Volume IAHandbook of Crystal Growth, 2nd Edition (Fundamentals: Thermodynamics and Kinetics) Volume IA addresses the present status of crystal growth science, and provides scientific tools for the following volumes: Volume II (Bulk Crystal Growth) and III (Thin Film Growth and Epitaxy). Volume IA highlights thermodynamics and kinetics. After historical introduction of the crystal growth, phase equilibria, defect thermodynamics, stoichiometry, and shape of crystal and structure of melt are described. Then, the most fundamental and basic aspects of crystal growth are presented, along with the theories of nucleation and growth kinetics. In addition, the simulations of crystal growth by Monte Carlo, ab initio-based approach and colloidal assembly are thoroughly investigated. Volume IBHandbook of Crystal Growth, 2nd Edition (Fundamentals: Transport and Stability) Volume IB discusses pattern formation, a typical problem in crystal growth. In addition, an introduction to morphological stability is given and the phase-field model is explained with comparison to experiments. The field of nanocrystal growth is rapidly expanding and here the growth from vapor is presented as an example. For the advancement of life science, the crystal growth of protein and other biological molecules is indispensable and biological crystallization in nature gives many hints for their crystal growth. Another subject discussed is pharmaceutical crystal growth. To understand the crystal growth, in situ observation is extremely powerful. The observation techniques are demonstrated. Volume IA - Explores phase equilibria, defect thermodynamics of Si, stoichiometry of oxides and atomistic structure of melt and alloys - Explains basic ideas to understand crystal growth, equilibrium shape of crystal, rough-smooth transition of step and surface, nucleation and growth mechanisms - Focuses on simulation of crystal growth by classical Monte Carlo, ab-initio based quantum mechanical approach, kinetic Monte Carlo and phase field model. Controlled colloidal assembly is presented as an experimental model for crystal growth. Volume IIB - Describes morphological stability theory and phase-field model and comparison to experiments of dendritic growth - Presents nanocrystal growth in vapor as well as protein crystal growth and biological crystallization - Interprets mass production of pharmaceutical crystals to be understood as ordinary crystal growth and explains crystallization of chiral molecules - Demonstrates in situ observation of crystal growth in vapor, solution and melt on the ground and in space
Author: Ivan V. Markov
Publisher: World Scientific
ISBN: 9812382453
Category : Science
Languages : en
Pages : 566
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Book Description
This is the first-ever textbook on the fundamentals of nucleation, crystal growth and epitaxy. It has been written from a unified point of view and is thus a non-eclectic presentation of this interdisciplinary topic in materials science. The reader is required to possess some basic knowledge of mathematics and physics. All formulae and equations are accompanied by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject. The second revised edition includes two separate chapters dealing with the effect of the Enrich-Schwoebel barrier for down-step diffusion, as well as the effect of surface active species, on the morphology of the growing surfaces. In addition, many other chapters are updated accordingly. Thus, it serves as a valuable reference book for both graduate students and researchers in materials science.
Author: Werner Kuhs
Publisher: Royal Society of Chemistry
ISBN: 1847557775
Category : Science
Languages : en
Pages : 721
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Book Description
Physics and Chemistry of Ice is an authoritative summary of state-of the-art research contributions from the world's leading scientists. A key selection of submissions from the 11th International Conference on the Physics and Chemistry of Ice, 2006 are presented here with a foreword by Werner F. Kuhs. An invaluable resource, this book provides researchers and professionals with up-to-date coverage on a wide range of areas in ice science including: * Spectroscopic and diffraction studies * Molecular dynamics simulations * Studies of Ice Mechanics * Quantum mechanical ab initio calculations * Ice and hydrate crystal growth and inhibition studies * Bulk and surface properties of ice and gas hydrates * Snow physics and chemistry This insight into topical aspects of ice research is a key point of reference for physicists, chemists, glaciologists, cryo-biologists and professionals working in the fields of ice and hydrogen bonding.
Author: Jarek Dabrowski
Publisher: Springer Science & Business Media
ISBN: 3662094320
Category : Technology & Engineering
Languages : en
Pages : 505
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Book Description
Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.
Author: Dietmar Fink
Publisher: Springer Science & Business Media
ISBN: 3662073269
Category : Technology & Engineering
Languages : en
Pages : 410
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Book Description
Presented in two parts, this first comprehensive overview addresses all aspects of energetic ion irradiation of polymers. Earlier publications and review articles concentrated on selected topics only. And the need for such a work has grown with the dramatic increase of research and applications, such as in photoresists, waveguides, and medical dosimetry, during the last decade. The first part, Fundamentals of Ion Irradiation of Polymers covers the physical, chemical and instrumental fundamentals; treats the specific irradiation mechanisms of low- and high-energy ions (including similarities and differences); and details the potential for future technological application. All the new findings are carefully analyzed and presented in a systematic way, while open questions are identified.
Author: Zhe Chuan Feng
Publisher: Springer Science & Business Media
ISBN: 3662098776
Category : Technology & Engineering
Languages : en
Pages : 464
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Book Description
This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century.
Author: Olof Holtz
Publisher: Springer Science & Business Media
ISBN: 3642186572
Category : Science
Languages : en
Pages : 141
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Book Description
The dramatic impact of low dimensional semiconductor structures on c- rent and future device applications cannot be overstated. Research over the last decade has highlighted the use of quantum engineering to achieve p- viously unknown limits for device performance in research laboratories. The modi?ed electronic structure of semiconductor quantum structures results in transport and optical properties, which di?er from those of constituent bulk materials. The possibility to tailor properties, such as bandgap, strain, band o?set etc. , of two-dimensional (2D) semiconductors, e. g. quantum wells, for speci?c purposes has had an extensive impact on the electronics, which has resulted in a dramatic renewal process. For instance, 2D structures are today used in a large number of high speed electronics and optoelectronic appli- tions (e. g. detectors, light emitting diodes, modulators, switches and lasers) and in daily life, in e. g. LED-based tra?c lights, CD-players, cash registers. The introduction of impurities, also in very small concentrations, in a semiconductor can change its optical and electrical properties entirely. This attribute of the semiconductor is utilized in the manifoldness of their app- cations. This fact constitutes the principal driving force for investigation of the properties of the impurities in semiconductors. While the impurities in bulk materials have been investigated for a long time, and their properties are fairly well established by now, the corresponding studies of impurities in quantum wells is a more recent research area.
Author: Eric J. Mittemeijer
Publisher: Springer Science & Business Media
ISBN: 3662067234
Category : Science
Languages : en
Pages : 557
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Book Description
Overview of diffraction methods applied to the analysis of the microstructure of materials. Since crystallite size and the presence of lattice defects have a decisive influence on the properties of many engineering materials, information about this microstructure is of vital importance in developing and assessing materials for practical applications. The most powerful and usually non-destructive evaluation techniques available are X-ray and neutron diffraction. The book details, among other things, diffraction-line broadening methods for determining crystallite size and atomic-scale strain due, e.g. to dislocations, and methods for the analysis of residual (macroscale) stress. The book assumes only a basic knowledge of solid-state physics and supplies readers sufficient information to apply the methods themselves.
Author: Klaus Ellmer
Publisher: Springer Science & Business Media
ISBN: 3540736123
Category : Science
Languages : en
Pages : 453
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Book Description
Zinc oxide (ZnO) belongs to the class of transparent conducting oxides that can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review.
