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Author: National Aeronautics and Space Administration (NASA)
Publisher: Createspace Independent Publishing Platform
ISBN: 9781722825386
Category :
Languages : en
Pages : 28
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Book Description
The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFET's) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 microns. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased. Biedenbender, M. D. and Kapoor, Vik J. and Shalkhauser, K. A. and Messick, L. J. and Nguyen, R. and Schmitz, D. and Juergensen, H. Glenn Research Center ...
Author: National Aeronautics and Space Administration (NASA)
Publisher: Createspace Independent Publishing Platform
ISBN: 9781722825386
Category :
Languages : en
Pages : 28
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Book Description
The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFET's) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 microns. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased. Biedenbender, M. D. and Kapoor, Vik J. and Shalkhauser, K. A. and Messick, L. J. and Nguyen, R. and Schmitz, D. and Juergensen, H. Glenn Research Center ...
Author: T. P. Pearsall
Publisher: Inst of Engineering & Technology
ISBN: 085296949X
Category : Technology & Engineering
Languages : en
Pages : 279
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Book Description
Annotation This collection of 49 papers identifies the significant advances and distills the current knowledge from the literature which has been published on indium phosphate (InP) in the last ten years. The major areas of discussion are the importance on InP properties in devices; mechanical, thermal, piezoelectric and electro-optic properties; electronic transport properties; band structure; optical properties; defects, deep levels and their detection; and processing technologies. Topics include InP-based alloys as optical amplifiers and lasers, electron and hole mobilities in InP, conduction band and valance band offsets at various InP/semiconductor interfaces, defect energy levels in irradiated or implanted InP, and etching of InP. Some of the material is reprinted from published in 1991. Distributed by INSPEC. Annotation c. Book News, Inc., Portland, OR (booknews.com)
Author: IEEE Electron Devices Society
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN: 9780780342200
Category : Technology & Engineering
Languages : en
Pages : 849
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Book Description
The papers included in this leading international conference examine test structures for microelectronic devices, their recent progress and future directions. Included is a detailed treatment of current developments in microelectronic test structure research, implementation, and applications. Also addressed are advances in device characterization, such as increased miniaturization, reduced operating voltages and reduced power requirements through improved measurement and test techniques. Topics highlighted include: Process Characterization, Dimensional Measurements, Interconnection, Material Characterization, Reliability, Device Characterization, and Statistics.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 738
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Book Description
Author: Avishay Katz
Publisher: Artech House Publishers
ISBN:
Category : Science
Languages : en
Pages : 472
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Book Description
Presents an integrated survey of the most recent research, engineering development and commercial application of indium phosphide and related materials. The book is tutorial in nature, rich in application-engineering detail and emphasizes the designing and implementing of practical devices.
Author: Wayne Huai Chen
Publisher:
ISBN: 9781124703312
Category :
Languages : en
Pages : 142
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Book Description
Flexible substrates have many advantages in applications where bendability, space, or weight play important roles or where rigid circuits are undesirable. However, conventional flexible thin film transistors are typically characterized as having low carrier mobility as compared to devices used in the electronics industry. This is in part due to the limited temperature tolerance of plastic flexible substrates, which commonly reduces the highest processing temperature to below 200°C. Common approaches of implementation include low temperature deposition of organic, amorphous, or polycrystalline semiconductors, all of which result in carrier mobility well below 100 cm2V−1s−1. High quality, single crystalline III-V semiconductors such as indium phosphide (InP), on the other hand, have carrier mobility well over 1000 cm2V−1s−1 at room temperature, depending on carrier concentration. Recently, the ion-cut process has been used in conjunction with wafer bonding to integrate thin layers of III-V material onto silicon for optoelectronic applications. This approach has the advantage of high scalability, reusability of the initial III-V substrate, and the ability to tailor the location (depth) of the layer splitting. However, the transferred substrate usually suffers from hydrogen implantation damage. This dissertation demonstrates a new approach to enable integration of InP with various substrates, called the double-flip transfer process. The process combines ion-cutting with adhesive bonding. The problem of hydrogen implantation was overcome by patterned ion-cut transfer. In this type of transfer, areas of interest are shielded from implantation but still transferred by surrounding implanted regions. We found that patterned ion-cut transfer is strongly dependent upon crystal orientation and that using cleavage-plane oriented donors can be beneficial in transferring large areas of high quality semiconductor material. InP-based devices were fabricated to demonstrate the transfer process and test functionality following transfer. Passive devices (photodetectors) as well as active transistors were transferred and fabricated on various substrates. The transferred device layers were either implanted through with a blanket implant or protected with an ion-mask during implantation. Results demonstrate the viability of the double-flip ion-cut process in achieving very high electron mobility (~2800 cm2V−1s−1) transistors on plastic flexible substrates.
Author: Rockwell International. Electronics Research Division
Publisher:
ISBN:
Category :
Languages : en
Pages : 84
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Book Description
Author:
Publisher:
ISBN:
Category : Indium alloys
Languages : en
Pages : 672
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Book Description
Author: Ralph Powers Ruth
Publisher:
ISBN:
Category : Indium ores
Languages : en
Pages : 80
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Book Description
Author: Rajendra Singh
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 672
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Book Description
