Terahertz Generation in Submicron Nitride-based Semiconductor Devices PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Terahertz Generation in Submicron Nitride-based Semiconductor Devices PDF full book. Access full book title Terahertz Generation in Submicron Nitride-based Semiconductor Devices by Edwin Allen Barry. Download full books in PDF and EPUB format.
Author: Edwin Allen Barry
Publisher:
ISBN:
Category :
Languages : en
Pages : 101
Get Book Here
Book Description
Keywords: GaN, nitride, THz.
Author: Edwin Allen Barry
Publisher:
ISBN:
Category :
Languages : en
Pages : 101
Get Book Here
Book Description
Keywords: GaN, nitride, THz.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
In this thesis, the electron dynamics and transport properties of III-nitride semiconductors materials and devices are studied, with an emphasis on their application to the generation high-frequency electromagnetic radiation. Numerical simulation models, including Monte Carlo, drift-diffusion, and thermal diffusion are utilized to model transport in the hot-electron and moderate-field regimes. The Monte Carlo method is first applied to the study of the distribution function and the basic characteristics of hot electrons in III-nitrides under moderate electric fields. It is found that in relatively low fields (of the order of kV/cm) polar-optical phonon emission dominates the electron kinetics giving rise to a spindle-shaped distribution function and an extended portion of a quasisaturation of the current-voltage (I-V) characteristics. The Monte Carlo program developed for the study of the III-nitrides is then extended to include the quantum mechanical spin evolution of electrons in bulk GaAs at room temperature. The spin relaxation time and characteristic decay lengths of spin polarized electrons are determined. Next, the conditions for microwave power generation in a submicrometer GaN diode are investigated. By applying a high-field electron transport model based on the local quasistatic approximation, it is shown that oscillations in GaN diodes can be supported in the terahertz-frequency range near the LSA regime. The shape of the diode voltage and electronic current waveforms are examined in terms of the circuit parameters and operating frequencies over the bandwidth of active generation. Based on a Fourier series analysis of the diode voltage and current, the generated power and dc-to-RF conversion efficiency at the fundamental and the lowest higher harmonic frequencies are estimated. The calculation results clearly indicate that submicrometer GaN diodes (channel doping of $1 imes 10^{17}$ cm$^{-3}$) can achieve large output powers ($>$ 1 W) in the absence of Gu.
Author: Guillermo Carpintero
Publisher: John Wiley & Sons
ISBN: 1118920392
Category : Technology & Engineering
Languages : en
Pages : 426
Get Book Here
Book Description
Key advances in Semiconductor Terahertz (THz) Technology now promises important new applications enabling scientists and engineers to overcome the challenges of accessing the so-called "terahertz gap". This pioneering reference explains the fundamental methods and surveys innovative techniques in the generation, detection and processing of THz waves with solid-state devices, as well as illustrating their potential applications in security and telecommunications, among other fields. With contributions from leading experts, Semiconductor Terahertz Technology: Devices and Systems at Room Temperature Operation comprehensively and systematically covers semiconductor-based room temperature operating sources such as photomixers, THz antennas, radiation concepts and THz propagation as well as room-temperature operating THz detectors. The second part of the book focuses on applications such as the latest photonic and electronic THz systems as well as emerging THz technologies including: whispering gallery resonators, liquid crystals, metamaterials and graphene-based devices. This book will provide support for practicing researchers and professionals and will be an indispensable reference to graduate students in the field of THz technology. Key features: Includes crucial theoretical background sections to photomixers, photoconductive switches and electronic THz generation & detection. Provides an extensive overview of semiconductor-based THz sources and applications. Discusses vital technologies for affordable THz applications. Supports teaching and studying increasingly popular courses on semiconductor THz technology.
Author: William R. Loerop
Publisher: World Scientific
ISBN: 9789812796820
Category : Technology & Engineering
Languages : en
Pages : 366
Get Book Here
Book Description
The last research frontier in high frequency electronics now lies in the so-called THz (or submillimeter-wave) regime between the traditional microwave and infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book serves as a detailed reference for the new THz frequency technological advances that are emerging across a wide spectrum of sensing and technology areas. Contents: THz Technology: An Overview (P H Siegel); Two-Terminal Active Devices for Terahertz Sources (G I Haddad et al.); Multiplier and Harmonic Generator Technologies for Terahertz Applications (R M Weikle II et al.); Submicron InP-Based HBTs for Ultra-High Frequency Amplifiers (M Urteaga et al.); THz Generation by Photomixing in Ultrafast Photoconductors (E R Brown); Silicon-Germanium Quantum-Cascade Lasers (R W Kelsall & R A Soref); Plasma Wave Electronics (M S Shur & V Ryzhii); T-Ray Sensing and Imaging (S P Mickan & X-C Zhang); Multistatic Reflection Imaging with Terahertz Pulses (T D Dorney et al.). Readership: Undergraduates, graduate students, academics and researchers in electrical & electronic engineering.
Author: Hadis Morkoç
Publisher: John Wiley & Sons
ISBN: 3527628452
Category : Technology & Engineering
Languages : en
Pages : 902
Get Book Here
Book Description
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 3 deals with nitride semiconductor devices and device technology. Among the application areas that feature prominently here are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection.
Author: M Razeghi
Publisher: Elsevier
ISBN: 9780080444260
Category : Science
Languages : en
Pages : 602
Get Book Here
Book Description
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author: Anatoliy Evtukh
Publisher: John Wiley & Sons
ISBN: 1119037964
Category : Technology & Engineering
Languages : en
Pages : 472
Get Book Here
Book Description
Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments. This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum nanoelectronic devices is also assessed. Key features: • In-depth description and analysis of the fundamentals of Quantum Electron effects in novel electron sources. • Comprehensive and up-to-date summary of the physics and technologies for THz sources for students of physical and engineering specialties and electronics engineers. • Unique coverage of quantum physical results for electron-field emission and novel electron sources with quantum effects, relevant for many applications such as electron microscopy, electron lithography, imaging and communication systems and signal processing. • New approaches for realization of electron sources with required and optimal parameters in electronic devices such as vacuum micro and nanoelectronics. This is an essential reference for researchers working in terahertz technology wanting to expand their knowledge of electron beam generation in vacuum and electron source quantum concepts. It is also valuable to advanced students in electronics engineering and physics who want to deepen their understanding of this topic. Ultimately, the progress of the quantum nanostructure theory and technology will promote the progress and development of electron sources as main part of vacuum macro-, micro- and nanoelectronics.
Author: Hadis Morkoç
Publisher:
ISBN: 9783540469308
Category : Science
Languages : en
Pages : 800
Get Book Here
Book Description
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with a clarity and depth not found elsewhere. The handbooks present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. They also deal with the properties and processes for thermal, optical (3-, 2-, 1-, 0-dimensional systems), electrical (at low- and high-electric fields, low- and high-magnetic fields for 3- and 2-dimensional systems), magnetism and magnetic properties (in dilute magnetic ion doped compounds) and spin-based device concepts. The associated measurement methods for each material deposition are discussed. The present volume 3 deals with nitride semiconductor devices and device technology. Among the applications areas that feature prominently are LEDs, lasers (including recording), FETs and HBTs (including novel treatment of fundamentals and hot phonon processes affecting the velocity), detectors and unique issues surrounding solar blind detection. This comprehensive handbook provides all interested researchers and engineers with an accessible treatment of this important class of materials.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 32
Get Book Here
Book Description
Nitride semiconductors based heterostructures have so far been exploited for electronic devices utilizing transport parallel to heterointerfaces. However, the vertical transport and its understanding in this heterostructure system are nascent. Heterojunction bipolar transistors have fundamental problems having to do with low base p-doping in terms of bipolar transistor standards and inferior emitter quality because of the poor quality Mg doped underlying base layer. The PnP variety is even worse. In terms of unipolar vertical transport structures, double barrier resonant tunneling structures have been reported. However, a closer investigation uncovered fundamental problems with reports in that the negative differential resistance so observed was found to be time dependent and number of sweeps. If the observed phenomenon were to be due to resonant enhanced tunneling none of the above should be associated with it, except some hysteresis.
Author: Krzysztof Iniewski
Publisher: CRC Press
ISBN: 143984836X
Category : Technology & Engineering
Languages : en
Pages : 600
Get Book Here
Book Description
With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.
