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Author: Uğur Çilingiroğlu
Publisher: Artech House Materials Science
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 256
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Book Description
Systematic Analysis of Bipolar and MOS Transistors is a self-contained reference that walks you through the logical processes involved in transistor analysis. Linking device and circuit engineering, it shows you how to use device models intelligently, tailor existing models, and develop new ones.
Author: Uğur Çilingiroğlu
Publisher: Artech House Materials Science
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 256
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Book Description
Systematic Analysis of Bipolar and MOS Transistors is a self-contained reference that walks you through the logical processes involved in transistor analysis. Linking device and circuit engineering, it shows you how to use device models intelligently, tailor existing models, and develop new ones.
Author: Remco J. Wiegerink
Publisher: Springer Science & Business Media
ISBN: 1461532140
Category : Technology & Engineering
Languages : en
Pages : 167
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Book Description
This book has its roots in an idea first formulated by Barrie Gilbert in 1975. He showed how bipolar analog circuits can realize nonlinear and computational functions. This extended the analog art from linear to nonlinear applications, hence the name trans linear circuits. Not only did this new principle enable marvellous signal processing functions to be accurately implemented, but also the circuits were simple and practical. The perennial problems of analog Ie design, namely temperature sensitivity, processing spread, device nonlinearity and paracitic capacitance were solved to a large extent. Using the trans linear principle in circuit design requires changing your point of view in two ways. First, the grossly nonlinear characteristic of transistors is viewed as an asset rather than as a harmful property. Second, no longer are the signals represented by voltages, but by currents. In fact, the attendant voltage changes are distorted but, as they are very small, they are only of secondary interest. Understanding and analyzing a given trans linear circuit is fairly straightforward. But what about the converse situation: suppose you're given some nonlinear or computational function to implement? How to find a suitable translinear circuit realization? The general problem of analog circuit synthesis is a difficult one and is receiving much attention nowadays. Some years ago, I had the opportunity to investigate methods for designing bipolar trans linear circuits. It turned out that translinear networks have some unique topological properties. Using these properties it was possible to establish heuristic synthesis procedures.
Author: Kunihiro Suzuki
Publisher: Bentham Science Publishers
ISBN: 1681082616
Category : Science
Languages : en
Pages : 587
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Book Description
Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the information technology sector. Bipolar transistors and MOSFETS are two special electronic device components that are used to construct very large scale integrated (VLSI) circuits, allowing engineers to create powerful machines that are power efficient. VLSI device characterization depends largely on semiconductor device modeling which is based on physical and electronic principles. Bipolar transistor and MOSFET device models is a textbook that describes basic functions and characterization models of these two types of transistors. Readers will learn about the processes employed to derive these models which will help them understand the modeling process. Chapters in this text cover the fundamentals of semiconductor devices, the pn junction, high and low injection region models for bipolar transistors, and different MOSFET models such as channel doping models and gated SOI models. Key features of this book include: - step by step, easy to understand presentation of model information on innovative semiconductor devices - an overview of model derivation, assumptions, approximations and limitations - novel experimental information on semiconductor parameters such as gate fringe capacitance, silicided source/drain resistance, and threshold voltage shift Bipolar transistor and MOSFET device models is an essential learning resource for advanced students and professional engineers involved in semiconductor device modeling and fabrication divisions.
Author: Bradley M. Marazas
Publisher:
ISBN:
Category :
Languages : en
Pages : 336
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Book Description
Author: Rolf Unbehauen
Publisher: Springer Science & Business Media
ISBN: 3642836771
Category : Technology & Engineering
Languages : en
Pages : 645
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Book Description
The purpose of this book is to present analysis and design principles, procedures and techniques of analog integrated circuits which are to be implemented in MOS (metal oxide semiconductor) technology. MOS technology is becoming dominant in the realization of digital systems, and its use for analog circuits opens new pos sibilities for the design of complex mixed analog/digital VLSI (very large scale in tegration) chips. Although we are focusing attention in this book principally on circuits and systems which can be implemented in CMOS technology, many con siderations and structures are of a general nature and can be adapted to other promising and emerging technologies, namely GaAs (Gallium Arsenide) and BI MOS (bipolar MOS, i. e. circuits which combine both bipolar and CMOS devices) technology. Moreover, some of the structures and circuits described in this book can also be useful without integration. In this book we describe two large classes of analog integrated circuits: • switched capacitor (SC) networks, • continuous-time CMOS (unswitched) circuits. SC networks are sampled-data systems in which electric charges are transferred from one point to another at regular discrete intervals of time and thus the signal samples are stored and processed. Other circuits belonging to this class of sampled-data systems are charge transfer devices (CTD) and charge coupled dev ices (CCD). In contrast to SC circuits, continuous-time CMOS circuits operate continuously in time. They can be considered as subcircuits or building blocks (e. g.
Author: Adolph Blicher
Publisher: Elsevier
ISBN: 0323155405
Category : Technology & Engineering
Languages : en
Pages : 337
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Book Description
Field-Effect and Bipolar Power Transistor Physics introduces the physics of operation of power transistors. It deals with bipolar devices as well as field-effect power transistors. The book provides an up-to-date account of the progress made in power transistor design. This volume consists of three parts. Part I examines general considerations and reviews semiconductor surface theory as a background to understanding surface phenomena. It also discusses the effect of high carrier concentration on the semiconductor properties. Part II deals with bipolar transistors and the basic structures of power transistors. Part III discusses junction field-effect and surface field-effect transistors. This book is written for electrical engineers who design power transistor circuits, device physicists and designers, and university students. The reader should have some familiarity with small signal transistor physics as the presentation is at the senior undergraduate or first-year graduate level.
Author: P. A. H. Hart
Publisher: North Holland
ISBN:
Category : Computers
Languages : en
Pages : 484
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Book Description
This book deals with the physics and technology aspects of monolytic integration of bipolar transistors and mixed integration of bipolar and MOS transistors. Bipolar technology is an "old" discipline which is now gaining renewed interest as the success of the IEEE bipolar transistor conference BCTM clearly illustrates. As well as providing extensive coverage of this subject, Bipolar and Bipolar-MOS Integration can be used as a handbook for those working in more specialized areas, to acquire access to related fields. Some tutorial paragraphs have been included that will be of particular interest to those new to the subject.The book will be of significant value to those working in the electronic industry, researchers or developers of integrated circuitry and university students.
Author: Michael Reisch
Publisher: Springer Science & Business Media
ISBN: 364255900X
Category : Technology & Engineering
Languages : en
Pages : 671
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Book Description
This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Author: Yannis Tsividis
Publisher: World Scientific
ISBN: 9789812381118
Category : Technology & Engineering
Languages : en
Pages : 300
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Book Description
Improve your circuit-design potential with this expert guide to the devices and technology used in mixed analog-digital VLSI chips for such high-volume applications as hard-disk drives, wireless telephones, and consumer electronics. The book provides you with a critical understanding of device models, fabrication technology, and layout as they apply to mixed analog-digital circuits.You will learn about the many device-modeling requirements for analog work, as well as the pitfalls in models used today for computer simulators such as Spice. Also included is information on fabrication technologies developed specifically for mixed-signal VLSI chips, plus guidance on the layout of mixed analog-digital chips for a high degree of analog-device matching and minimum digital-to-analog interference.This reference book features an intuitive introduction to MOSFET operation that will enable you to view with insight any MOSFET model ? besides thorough discussions on valuable large-signal and small-signal models.Filled with practical information, this first-of-its-kind book will help you grasp the nuances of mixed-signal VLSI-device models and layout that are crucial to the design of high-performance chips.
Author: Bryan Norris
Publisher: McGraw-Hill Companies
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 248
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Book Description
