Author: Tsung-Pei Chin
Publisher:
ISBN:
Category :
Languages : en
Pages : 300
Book Description
Synthesis and Characterization of Highly-mismatched III-V Semiconductors by Gas-source Molecular Beam Epitaxy
Author: Tsung-Pei Chin
Publisher:
ISBN:
Category :
Languages : en
Pages : 300
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 300
Book Description
Dissertation Abstracts International
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 848
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 848
Book Description
Molecular Beam Epitaxy
Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
CVD of Compound Semiconductors
Author: Anthony C. Jones
Publisher: John Wiley & Sons
ISBN: 3527614621
Category : Science
Languages : en
Pages : 352
Book Description
Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.
Publisher: John Wiley & Sons
ISBN: 3527614621
Category : Science
Languages : en
Pages : 352
Book Description
Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.
Advances in Nanoparticles
Author: Luca Pasquini
Publisher: MDPI
ISBN: 3039285823
Category : Science
Languages : en
Pages : 144
Book Description
This book focuses on recent advances in the synthesis of nanoparticles, their characterization, and their applications in different fields such as catalysis, photonics, magnetism, and nanomedicine. Nanoparticles receive a large share of the worldwide research activity in contemporary materials science. This is witnessed by the number of scientific papers with "nanoparticle" as a keyword, increasing linearly in the last 10 years from about 16,000 in 2009 to about 50,000 in 2019. This impressive widespread interest stems from the basic science of nanoparticles, which constitute a bridge between the molecular and the bulk worlds, as well as from their technological applications. The preparation of nanoparticles is a crossroad of materials science where chemists, physicists, engineers, and even biologists frequently meet, leading to a continuous improvement of existing techniques and to the invention of new methods. The reader interested in nanoparticles synthesis and properties will here find a valuable selection of scientific cases that cannot cover all methods and applications relevant to the field, but still provide an updated overview on the fervent research activity focused on nanoparticles.
Publisher: MDPI
ISBN: 3039285823
Category : Science
Languages : en
Pages : 144
Book Description
This book focuses on recent advances in the synthesis of nanoparticles, their characterization, and their applications in different fields such as catalysis, photonics, magnetism, and nanomedicine. Nanoparticles receive a large share of the worldwide research activity in contemporary materials science. This is witnessed by the number of scientific papers with "nanoparticle" as a keyword, increasing linearly in the last 10 years from about 16,000 in 2009 to about 50,000 in 2019. This impressive widespread interest stems from the basic science of nanoparticles, which constitute a bridge between the molecular and the bulk worlds, as well as from their technological applications. The preparation of nanoparticles is a crossroad of materials science where chemists, physicists, engineers, and even biologists frequently meet, leading to a continuous improvement of existing techniques and to the invention of new methods. The reader interested in nanoparticles synthesis and properties will here find a valuable selection of scientific cases that cannot cover all methods and applications relevant to the field, but still provide an updated overview on the fervent research activity focused on nanoparticles.
International Aerospace Abstracts
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 980
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 980
Book Description
American Doctoral Dissertations
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 872
Book Description
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 872
Book Description
Electrical & Electronics Abstracts
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2240
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2240
Book Description
Dilute Nitride Semiconductors
Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0080455999
Category : Technology & Engineering
Languages : en
Pages : 648
Book Description
- This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. - It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics - Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field - Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community
Publisher: Elsevier
ISBN: 0080455999
Category : Technology & Engineering
Languages : en
Pages : 648
Book Description
- This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. - It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics - Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field - Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community
AT&T Technical Journal
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1180
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1180
Book Description