High-Frequency Soft-Switching Transformerless Grid-Connected Inverters PDF Download
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Author: Huafeng Xiao
Publisher: Springer Nature
ISBN: 9811930384
Category : Technology & Engineering
Languages : en
Pages : 167
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Book Description
This book is essential and valuable reference for graduate students and academics majored in power electronics, engineers engaged in developing distributed grid-connected inverters, and senior undergraduate students majored in electrical engineering and automation engineering. Soft-switching (SS) technique is an important way to achieve high conversion efficiency and high switching frequency for power converters, which is beneficial to improve power density and reduce volume and cost of power electronics equipment. This book mainly discusses SS technique for transformerless grid-connected inverters (TLIs), and a SS configuration named as “Freewheeling-Resonance-Tank Inverters” is proposed for TLIs fulfilling requirements of switching loss-free, full power factor range, and constant common-mode voltage performance. The detailed theoretical analysis and experimental validations are presented from ZCT and ZVT type topologies, respectively.
Author: Huafeng Xiao
Publisher: Springer Nature
ISBN: 9811930384
Category : Technology & Engineering
Languages : en
Pages : 167
Get Book Here
Book Description
This book is essential and valuable reference for graduate students and academics majored in power electronics, engineers engaged in developing distributed grid-connected inverters, and senior undergraduate students majored in electrical engineering and automation engineering. Soft-switching (SS) technique is an important way to achieve high conversion efficiency and high switching frequency for power converters, which is beneficial to improve power density and reduce volume and cost of power electronics equipment. This book mainly discusses SS technique for transformerless grid-connected inverters (TLIs), and a SS configuration named as “Freewheeling-Resonance-Tank Inverters” is proposed for TLIs fulfilling requirements of switching loss-free, full power factor range, and constant common-mode voltage performance. The detailed theoretical analysis and experimental validations are presented from ZCT and ZVT type topologies, respectively.
Author: Chunwei Cai
Publisher: Springer Nature
ISBN: 9819708656
Category :
Languages : en
Pages : 701
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Book Description
Author: Cungang Hu
Publisher: Springer Nature
ISBN: 9819943345
Category : Technology & Engineering
Languages : en
Pages : 1326
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Book Description
This book will be a collection of the conference manuscripts presented at the 2022 2nd International Joint Conference on Energy, Electrical and Power Engineering covering new and renewable energy, electrical and power engineering. It is expected to report the latest technological developments in the fields developed by academic researchers and industrial practitioners. The application and dissemination of these technologies will benefit the research community, as new research directions are becoming increasingly interdisciplinary, requiring researchers from different research areas to come together and share ideas. It will also benefit the electrical engineering and energy industry, as we are now experiencing a new wave of industrial revolution, i.e. the electrification, intelligentisation and digitalisation of our transport, manufacturing processes and way of thinking.
Author: Weihao Hu
Publisher: Frontiers Media SA
ISBN: 2832525172
Category : Technology & Engineering
Languages : en
Pages : 141
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Book Description
Author: Farid Medjdoub
Publisher: MDPI
ISBN: 3036505660
Category : Technology & Engineering
Languages : en
Pages : 242
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Book Description
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Author: Josef Lutz
Publisher: Springer
ISBN: 3319709178
Category : Technology & Engineering
Languages : en
Pages : 723
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Book Description
Halbleiter-Leistungsbauelemente sind das Kernstück der Leistungselektronik. Sie bestimmen die Leistungsfähigkeit und machen neuartige und verlustarme Schaltungen erst möglich. In dem Band wird neben den Halbleiter-Leistungsbauelementen selbst auch die Aufbau- und Verbindungstechnik behandelt: von den physikalischen Grundlagen und der Herstellungstechnologie über einzelne Bauelemente bis zu thermomechanischen Problemen, Zerstörungsmechanismen und Störungseffekten. Die 2., überarbeitete Auflage berücksichtigt technische Neuerungen und Entwicklungen.
Author: Dingde Jiang
Publisher: Springer Nature
ISBN: 3030971244
Category : Computers
Languages : en
Pages : 652
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Book Description
This proceedings constitutes the refereed post-conference proceedings of the 13th International Conference on Simulation Tools and Techniques, SIMUTools 2021, held in November 2021. Due to COVID-19 pandemic the conference was held virtually. The 63 revised full papers were carefully selected from 143 submissions. The papers focus on new results in the field of system modeling and simulation, software simulation, communication networks’ modeling and analysis, AI system simulation and performance analysis, big data simulation analysis, addressing current and future trends in simulation techniques. They are grouped in thematic aspects on wireless communication, big data, modeling and simulation, deep learning, network simulation and life and medical sciences.
Author: Peter Wellmann
Publisher: John Wiley & Sons
ISBN: 3527346716
Category : Technology & Engineering
Languages : en
Pages : 743
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Book Description
Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.
Author: Massimo Rudan
Publisher: Springer Nature
ISBN: 3030798275
Category : Technology & Engineering
Languages : en
Pages : 1680
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Book Description
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Author: B. Jayant Baliga
Publisher: Woodhead Publishing
ISBN: 0081023073
Category : Technology & Engineering
Languages : en
Pages : 420
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Book Description
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
