Author: Chun-Yung Sung
Publisher:
ISBN:
Category :
Languages : en
Pages : 400
Book Description
Subpicosecond Carrier Dynamics in Semiconductor Lasers and Lasers Based on Intersubband Transition
Author: Chun-Yung Sung
Publisher:
ISBN:
Category :
Languages : en
Pages : 400
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 400
Book Description
Non-Equilibrium Dynamics of Semiconductors and Nanostructures
Author: Kong-Thon Tsen
Publisher: CRC Press
ISBN: 1351836927
Category : Technology & Engineering
Languages : en
Pages : 241
Book Description
The advent of the femto-second laser has enabled us to observe phenomena at the atomic timescale. One area to reap enormous benefits from this ability is ultrafast dynamics. Collecting the works of leading experts from around the globe, Non-Equilibrium Dynamics of Semiconductors and Nanostructures surveys recent developments in a variety of areas in ultrafast dynamics. In eight authoritative chapters illustrated by more than 150 figures, this book spans a broad range of new techniques and advances. It begins with a review of spin dynamics in a high-mobility two-dimensional electron gas, followed by the generation, propagation, and nonlinear properties of high-amplitude, ultrashort strain solitons in solids. The discussion then turns to nonlinear optical properties of nanoscale artificial dielectrics, optical properties of GaN self-assembled quantum dots, and optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based semiconductors. Rounding out the presentation, the book examines ultrafast non-equilibrium electron dynamics in metal nanoparticles, monochromatic acoustic phonons in GaAs, and electromagnetically induced transparency in semiconductor quantum wells. With its pedagogical approach and practical, up-to-date coverage, Non-Equilibrium Dynamics of Semiconductors and Nanostructures allows you to easily put the material into practice, whether you are a seasoned researcher or new to the field.
Publisher: CRC Press
ISBN: 1351836927
Category : Technology & Engineering
Languages : en
Pages : 241
Book Description
The advent of the femto-second laser has enabled us to observe phenomena at the atomic timescale. One area to reap enormous benefits from this ability is ultrafast dynamics. Collecting the works of leading experts from around the globe, Non-Equilibrium Dynamics of Semiconductors and Nanostructures surveys recent developments in a variety of areas in ultrafast dynamics. In eight authoritative chapters illustrated by more than 150 figures, this book spans a broad range of new techniques and advances. It begins with a review of spin dynamics in a high-mobility two-dimensional electron gas, followed by the generation, propagation, and nonlinear properties of high-amplitude, ultrashort strain solitons in solids. The discussion then turns to nonlinear optical properties of nanoscale artificial dielectrics, optical properties of GaN self-assembled quantum dots, and optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based semiconductors. Rounding out the presentation, the book examines ultrafast non-equilibrium electron dynamics in metal nanoparticles, monochromatic acoustic phonons in GaAs, and electromagnetically induced transparency in semiconductor quantum wells. With its pedagogical approach and practical, up-to-date coverage, Non-Equilibrium Dynamics of Semiconductors and Nanostructures allows you to easily put the material into practice, whether you are a seasoned researcher or new to the field.
Chemical Abstracts
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2692
Book Description
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2692
Book Description
Ultrafast Phenomena in Semiconductors
Author:
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 340
Book Description
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 340
Book Description
Physics Briefs
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1224
Book Description
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1224
Book Description
Applied Nanophotonics
Author: Sergey V. Gaponenko
Publisher: Cambridge University Press
ISBN: 1107145503
Category : Science
Languages : en
Pages : 453
Book Description
An accessible yet rigorous introduction to nanophotonics, covering basic principles, technology, and applications in lighting, lasers, and photovoltaics. Providing a wealth of information on materials and devices, and over 150 color figures, it is the 'go-to' guide for students in electrical engineering taking courses in nanophotonics.
Publisher: Cambridge University Press
ISBN: 1107145503
Category : Science
Languages : en
Pages : 453
Book Description
An accessible yet rigorous introduction to nanophotonics, covering basic principles, technology, and applications in lighting, lasers, and photovoltaics. Providing a wealth of information on materials and devices, and over 150 color figures, it is the 'go-to' guide for students in electrical engineering taking courses in nanophotonics.
Intersubband Transitions in Quantum Wells
Author: Emmanuel Rosencher
Publisher: Springer Science & Business Media
ISBN: 1461533465
Category : Science
Languages : en
Pages : 341
Book Description
This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quantum wells are a real life materialization of our old text book one-dimensional quantum well ideal. Complex physical phenomena may then be investigated on a simple model system.
Publisher: Springer Science & Business Media
ISBN: 1461533465
Category : Science
Languages : en
Pages : 341
Book Description
This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quantum wells are a real life materialization of our old text book one-dimensional quantum well ideal. Complex physical phenomena may then be investigated on a simple model system.
Electrical & Electronics Abstracts
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2240
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2240
Book Description
Nonlinear Optical Frequency Conversion Devices Based on Intersubband Transitions in Semiconductor Quantum Wells
Author: Gary Leonard Woods
Publisher:
ISBN:
Category :
Languages : en
Pages : 550
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 550
Book Description
Ceramic Abstracts
Author:
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 972
Book Description
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 972
Book Description