Study of Plasma-surface Kinetics and Feature Profile Simulation of Poly-silicon Etching in Cl2/HBr Plasma PDF Download

Author: Weidong Jin
Publisher:
ISBN:
Category :
Languages : en
Pages : 185

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Book Description
This work characterized the Cl2/HBr ion enhanced plasma-surface interactions with poly-silicon as a function of the gas composition, ion energy, ion incident angle and other important process parameters. A realistic inductively coupled plasma beam apparatus capable of generating ions and neutrals representative of real commercial etcher was constructed and utilized to simulate accurately a high density plasma environment. Etching rate of poly- silicon, the oxygen effect and loading effect are quantified to better describe the etching of patterned poly-silicon in fabricating the gate electrode of a transistor in VLSI manufacturing process. The kinetics model derived from these measurements are incorporated into a Monte Carlo based feature profile simulator, and profile evolution has been simulated under various processing conditions. The realistic plasma beam was used to measure the etching yields of poly-silicon with Cl2/HBr chemistry at different ion energies. The etching yields were found to scale linearly with ... where the threshold energies, Eth are 10 eV for both Cl2 and HBr. The etching yields at different neutral-to-ion flux ratio were measured and the sticking coefficients are derived for reactive neutrals for Cl2 and HBr. The sticking coefficient for HBr system is lower probably due to the relatively larger size of bromine atom compared with chlorine and its relatively lower chemical reactivity. The etching yields for mixed Cl2+HBr plasma at different compositions were also measured.