Study of Photomodulated Optical Reflectance on Germanium and Silicon-germanium Based Structures PDF Download
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Category :
Languages : en
Pages : 69
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Author:
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Category :
Languages : en
Pages : 69
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Author: Janusz Bogdanowicz
Publisher: Springer Science & Business Media
ISBN: 3642301088
Category : Technology & Engineering
Languages : en
Pages : 217
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One of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that does not require physical contact, making it suitable for non-invasive in-line metrology. This work develops extensively all the fundamental physical models of the photomodulated optical reflectance technique and introduces novel approaches that extend its applicability from dose monitoring towards detailed carrier profile reconstruction. It represents a significant breakthrough in junction metrology with potential for industrial implementation.
Author: Kazumi Wada
Publisher: John Wiley & Sons
ISBN: 3527328211
Category : Science
Languages : en
Pages : 334
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Representing a further step towards enabling the convergence of computing and communication, this handbook and reference treats germanium electronics and optics on an equal footing. Renowned experts paint the big picture, combining both introductory material and the latest results. The first part of the book introduces readers to the fundamental properties of germanium, such as band offsets, impurities, defects and surface structures, which determine the performance of germanium-based devices in conjunction with conventional silicon technology. The second part covers methods of preparing and processing germanium structures, including chemical and physical vapor deposition, condensation approaches and chemical etching. The third and largest part gives a broad overview of the applications of integrated germanium technology: waveguides, photodetectors, modulators, ring resonators, transistors and, prominently, light-emitting devices. An invaluable one-stop resource for both researchers and developers.
Author: Patrick Michael Wallace
Publisher:
ISBN:
Category : Germanium alloys
Languages : en
Pages : 176
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The work described in this thesis explores the synthesis of new semiconductors in the Si-Ge-Sn system for application in Si-photonics. Direct gap Ge1-ySny (y=0.12-0.16) alloys with enhanced light emission and absorption are pursued. Monocrystalline layers are grown on Si platforms via epitaxy-driven reactions between Sn- and Ge-hydrides using compositionally graded buffer layers that mitigate lattice mismatch between the epilayer and Si platforms. Prototype p-i-n structures are fabricated and are found to exhibit direct gap electroluminescence and tunable absorption edges between 2200 and 2700 nm indicating applications in LEDs and detectors. Additionally, a low pressure technique is described producing pseudomorphic Ge1-ySny alloys in the compositional range y=0.06-0.17. Synthesis of these materials is achieved at ultra-low temperatures resulting in nearly defect-free films that far exceed the critical thicknesses predicted by thermodynamic considerations, and provide a chemically driven route toward materials with properties typically associated with molecular beam epitaxy. Silicon incorporation into Ge1-ySny yields a new class of Ge1-x-ySixSny (y>x) ternary alloys using reactions between Ge3H8, Si4H10, and SnD4. These materials contain small amounts of Si (x=0.05-0.08) and Sn contents of y=0.1-0.15. Photoluminescence studies indicate an intensity enhancement relative to materials with lower Sn contents (y=0.05-0.09). These materials may serve as thermally robust alternatives to Ge1-ySny for mid-infrared (IR) optoelectronic applications. An extension of the above work is the discovery of a new class of Ge-like Group III-V-IV hybrids with compositions Ga(As1–xPx)Ge3 (x=0.01-0.90) and (GaP)yGe5–2y related to Ge1-x-ySixSny in structure and properties. These materials are prepared by chemical vapor deposition of reactive Ga-hydrides with P(GeH3)3 and As(GeH3)3 custom precursors as the sources of P, As, and Ge incorporating isolated GaAs and GaP donor-acceptor pairs into diamond-like Ge-based structures. Photoluminescence studies reveal bandgaps in the near-IR and large bowing of the optical behavior relative to linear interpolation of the III-V and Ge end members. Similar materials in the Al-Sb-B-P system are also prepared and characterized. The common theme of the above topics is the design and fabrication of new optoelectronic materials that can be fully compatible with Si-based technologies for expanding the optoelectronic capabilities of Ge into the mid-IR and beyond through compositional tuning of the diamond lattice.
Author:
Publisher: Academic Press
ISBN: 0080864546
Category : Technology & Engineering
Languages : en
Pages : 459
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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 704
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Author: Kausar M. Hassan
Publisher:
ISBN:
Category : Germanium crystals
Languages : en
Pages : 200
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Author: Candi S. Cook
Publisher:
ISBN:
Category : Germanium alloys
Languages : en
Pages : 106
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Author: Yan Cai (Ph. D.)
Publisher:
ISBN:
Category :
Languages : en
Pages : 197
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Germanium (Ge) is an optically active material with the advantages of Si-CMOS compatibility and monolithic integration. It has great potential to be used as the light emitter for Si photonics. Tensile strain and n-type doping are two key properties in Ge to achieve optical gain. This thesis mainly focuses on: (1) physical understandings of the threshold behavior of Ge-on-Si bulk laser and the temperature dependent performance; (2) process developments to grow and planarize the epitaxial Ge on Si in oxide trenches and corners; (3) introduction of n-type dopant into Ge-on-Si thin films while studying the threading dislocation behavior in n-Ge during annealing; (4) Design an external cavity Ge laser integrated with Si waveguides for a low threshold current and single mode operation. Heavy n-type doping was observed to change the Ge electronic band structure by band gap narrowing effect. We also found a failure of using a simple Drude model to explain free carrier absorption in n-Ge. We modified the optical gain simulation based on the above two observations in Ge. We found a broad gain bandwidth of ~ 200 nm from 1550 nm to 1750 nm and a higher net materials gain. We predicted a theoretical lasing threshold current density of 5~10 kA/cm2 in the bulk Ge laser device with the n-type doping of mid-1019 cm-3 at room temperature. We also predicted the Ge laser device would have better temperature stability regarding the threshold current compared to the III-V laser. Single crystalline Ge was epitaxial grown on Si in oxide trenches using ultra high vacuum chemical vapor deposition. The selective growth lead to the faceting in Ge because of the different growth rates of crystal orientations. We developed a suitable photolithography and oxide etch process to get the vertical oxide sidewall for Ge trench filling. We also tested the Ge growth in the T-shape corners to improve the reflectivity at the waveguide end. The T-shape structure was also useful for the Ge/Si waveguide coupling in the external cavity laser. Furthermore, we developed a chemical mechanical polishing (CMP) process for the over-grown Ge waveguides. The Ge CMP process was selective to oxide, flexible to change in the CMP rate by DI water dilution and controllable for a minimum dishing of Ge in the oxide trenches. N-type doping helped to increase the direct band transition in Ge for light emission. We developed a delta-doping method to grow a dopant source called "delta doping layer" on the single crystalline Ge layer without introducing extra defects. We then used rapid thermal annealing to drive the dopant into the underlying Ge layer. The dopant enhanced diffusion was discovered to speed up the drive-in process. The active n-type concentration in Ge could reach up to 5×1019 cm-3 using the delta doping source and annealing process. Since the dopant source layer had a disrupted Ge growth, we used the developed CMP process to remove it after the dopant drive-in. A comprehensive dopant diffusion simulation was developed to predict the annealing temperature and time to achieve high n-type doping and uniform distribution. We used plan-view transmission electron microscopy to examine the threading dislocation density (TDD) in n-Ge for both blanket films and trench grown waveguides. We found a high TDD of ~ 1×108cm-2 in 1 [mu]m thick blanket Ge with doping of 3×1018 cm-3 after high temperature annealing at 850 °C for 40 min. The TDD is 1×109 cm-2 in the 300 nm thick and 1 [mu]m wide Ge waveguide. We examined the effects of annealing temperature, Ge thickness, Si/Ge inter-diffusion and trench width on the threading dislocation behavior. However, we have not found the exact reason causing the high TDD and therefore, further study is required on the TDD reduction for the Ge waveguide. Finally, we designed an external cavity Ge laser using distributed Bragg reflector (DBR) gratings on Si waveguides. A detailed discussion on the cross section design was presented to mitigate the internal optical loss from claddings and metal layers and to improve the current injection uniformity across the Ge waveguide. The aim of the DBR grating design was to achieve a single mode operation by controlling the full width half maximum of the grating reflectance spectrum. We also discussed the coupling between Ge and Si waveguides and different designs were presented to increase the coupling efficiency.
Author: Marjorie A. Olmstead
Publisher:
ISBN:
Category : Silicon
Languages : en
Pages : 94
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