Study Of Cu Free Back Contacts to Thin Film CdTe Solar Cells PDF Download
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Author: Vijay Viswanathan
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Languages : en
Pages :
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ABSTRACT: The effect of etching ambient, pressure, plasma power and etch time on contact performance will be studied.
Author: Vijay Viswanathan
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
ABSTRACT: The effect of etching ambient, pressure, plasma power and etch time on contact performance will be studied.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Ohmic contacts to thin-film CdS/CdTe photovoltaic devices have been formed using a two-layer contact interface of undoped ZnTe (ZnTe) and Cu-doped ZnTe (ZnTe:Cu), followed by Ni or Ti as an outer metallization. Secondary ion mass spectroscopy (SIMS) is used to study Cu diffusion within this back-contact structure, and also, to monitor Cu diffusion from the contact into the CdTe. When Nimetallization is used, the ZnTe:Cu layer becomes increasingly depleted of Cu, and Ni diffusion into the ZnTe:Cu increases as the contact deposition temperature increases from 100 deg. C to 300 deg. C. Cu depletion is not observed when Ni is replaced with Ti. Diffusion of Cu from the ZnTe:Cu layer into the ZnTe layer also increases with contact deposition temperature, and produces a buildup of Cuat the ZnTe/CdTe interface. High-mass resolution SIMS indicates that, although Cu levels in the CdTe remain low, Cu diffusion from the contact proceeds into the CdTe layer and toward the CdTe/CdS junction region.
Author: Arvind Shah
Publisher: Springer Nature
ISBN: 3030464873
Category : Science
Languages : en
Pages : 357
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This book gives a comprehensive introduction to the field of photovoltaic (PV) solar cells and modules. In thirteen chapters, it addresses a wide range of topics including the spectrum of light received by PV devices, the basic functioning of a solar cell, and the physical factors limiting the efficiency of solar cells. It places particular emphasis on crystalline silicon solar cells and modules, which constitute today more than 90 % of all modules sold worldwide. Describing in great detail both the manufacturing process and resulting module performance, the book also touches on the newest developments in this sector, such as Tunnel Oxide Passivated Contact (TOPCON) and heterojunction modules, while dedicating a major chapter to general questions of module design and fabrication. Overall, it presents the essential theoretical and practical concepts of PV solar cells and modules in an easy-to-understand manner and discusses current challenges facing the global research and development community.
Author: Udai P. Singh
Publisher: Springer Nature
ISBN: 9811937249
Category : Technology & Engineering
Languages : en
Pages : 281
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Book Description
This book provides recent development in thin-film solar cells (TFSC). TFSC have proven the promising approach for terrestrial and space photovoltaics. TFSC have the potential to change the device design and produce high efficiency devices on rigid/flexible substrates with significantly low manufacturing cost. TFSC have several advantages in manufacturing compared to traditional crystalline Si-solar cells like less requirement of materials, can be prepared with earth’s abundant materials, less processing steps, easy to dispose, etc. Several universities/research institutes/industry in India and abroad are involved in the research area of thin-film solar cells. The book helps the readers to find the details about different thin-film technologies and its advancement at one place. Each chapter covers properties of materials, its suitability for PV applications, simple manufacturing processes and recent and past literature survey. The issues related to the development of high efficiency TFSC devices over large area and its commercial and future prospects are discussed.
Author: Ghenadii Korotcenkov
Publisher: Springer Nature
ISBN: 3031195310
Category : Technology & Engineering
Languages : en
Pages : 585
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Book Description
Three-volumes book “Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors” is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The first volume "Materials and Technologies" of a three-volume set describes the physical, chemical and electronic properties of II-VI compounds, which give rise to an increased interest in these semiconductors. Technologies that are used in the development of various devices based on II-VI connections, such as material synthesis, deposition, characterization, processing, and device fabrication, are also discussed in detail in this volume. It covers also topics related to synthesis and application of II-VI-based nanoparticles and quantum dots, as well their toxicity, biocompatibility and biofunctionalization.
Author: Jian Tang
Publisher:
ISBN:
Category : Polycrystalline semiconductors
Languages : en
Pages : 348
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Author: T. A. Gessert
Publisher:
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Category :
Languages : en
Pages : 5
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Copper is frequently used as a p-type dopant to improve the performance of back contacts in CdTe thin-film solar cells. In this study, surface-analysis techniques are used to probe fundamental interactions between Cu and the CdTe(111)-B surface. The results presented here were facilitated by the newly constructed surface-analysis cluster tool in the Measurements and Characterization Division at NREL; they reveal a host of fundamental phenomena that occur in the Cu/CdTe system.
Author:
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Category :
Languages : en
Pages : 0
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We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at0.55 eV whose concentration is significant when the Cu concentration ishigh. The device performance, which initially increases with Cu concentration then decreases, reflects the interplay between the positive influences and negative influences (increasing deep levels in CdTe) of Cu.
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Category : Cadmium sulfide photoconductive cells
Languages : en
Pages : 18
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Author: Poonam Rani Kharangarh
Publisher:
ISBN:
Category :
Languages : en
Pages : 134
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Among various photovoltaic materials, polycrystalline cadmium telluride thin film is now the most promising material, due to its low production cost excellent stability and reliability. Current-voltage and capacitance-voltage measurements of CdTe photovoltaic devices at different temperatures can provide valuable information about non-idealities in the n-p semiconductor junction. There are certain limitations which limit the efficiency of CdTe solar cells. There is no real distinction between defects and impurities in CdTe solar cells as both act as beneficial dopants or detrimental traps unlike Si where intentional shallow dopants and traps are distinctly different. Therefore, the role of defect states on CdTe solar cell performance, the effect of processing on defect states, and simple and effective characterization techniques must be investigated and identified. In this research the thin film n+-CdS/p-CdTe solar cells made with evaporated Cu as a primary back contact, are characterized by using the temperature dependence of the reverse bias diode current (J-V-T) to determine the energy levels of deep defects. The results of the J-V-T measurements on solar cells made at NJIT show that while modest amounts of Cu enhance cell performance, an excessive high temperature annealing step degrades device quality and reduces efficiency. This work addresses the error that can be introduced during defect energy level estimation if the temperature dependence of the carrier capture cross-section is neglected. Therefore, the location of traps is derived using a Shockley-Read-Hall recombination model with modified assumptions. A Cu-related deep level defect with activation energy of 0.57eV is observed for Cu evaporated back contact cells and an intrinsic defect with activation energy 0.89eV is found. Frequency dispersion in Capacitance-Voltage measurements confirms the presence of Cu-related deep level traps for cells with a Cu evaporated back contact, whereas no such defects are observed in carbon paste contact. The behavior is believed to be due to diffusion of excess Cu from the contact. It is further observed that majority carrier deep level traps (Cu-related or intrinsic) contribute differently to the degradation of electronic properties of the CdTe solar cells. A simple and effective characterization technique based on temperature dependent capacitance spectroscopy (TDCS) is used to identify majority carrier trapping defects in thin film n+-CdS/p-CdTe solar cell, made with evaporated Cu as a primary back contact. The distinct deep level traps, observed by TDCS seem to be due to the ionization of impurity centers located in the depletion region of n+-CdS/p-CdTe junction.
