Study of Area Selective Deposition by Competitive Adsorption PDF Download

Author: Pengyuan Zhao
Publisher:
ISBN:
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Languages : en
Pages : 67

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Book Description
Moore's Law has been the guiding principle for semiconductor industry to scale down the device size. Consumers have been directly benefited from the ever developed technologies that lead to a faster, smaller, and more reliable performance. In order to preserve the advantages inherited from "scaling-down", researchers have invested into "bottom-up" approach which extends the "leeway" before Moore's postulation reaches saturation. Area-selective deposition (ASD) is an advanced technique to realize bottom-up fabrication as the device feature size shrinks to sub-5 nm scale. On the other hands, conventional top-down process, such as patterning of the substrate followed by selective etching process, tends to result misalignment errors. We have developed a proof-of-concept approach to address the challenge. The approach involves chemical vapor deposition (CVD) in which substrates are exposed to a precursor and a co-reactant. A third reactant termed "co-adsorbate" was utilized to direct growth only occurs on one surface in the presence of another. In this work, 4-octyne was used as co-adsorbate in the CVD of ZrO\textsubscript{2} thin films on SiO\textsubscript{2} and Cu substrates. Expected from quantum chemistry calculation, 4-octyne favors binding on Cu substrate through rehybridization, whereas it only interacts with SiO\textsubscript{2} by van der Waals force. The difference in binding energies affords selective growth.