Studies on Copper Indium Based Transparent Semiconducting Oxide Thin Films PDF Download
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Author: Giji Skaria
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
In this work, we investigate the realization of p-type CuInOx thin films by RF magnetron sputtering using Cu2O: In2O3 target and study the effects of (i) post-deposition annealing and (ii) substrate heating during a deposition for controlling the optoelectronic and morphological properties. In the first part of the study, post-process annealing of the deposited films was performed at temperatures ranging from 100-900°C in O2 ambiance. The X-ray diffraction (XRD) analysis performed on the samples identified the presence of Cu2In2O5 phases along with CuInO2 or In2O3 for the films annealed above 500°C. A morphological study performed using SEM shows the crystallization and the grain growth with an increase in the annealing temperatures. Optical studies carried out on the films indicated a small bandgap change in the range of 3.4-3.6 eV during annealing.
Author: Giji Skaria
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
In this work, we investigate the realization of p-type CuInOx thin films by RF magnetron sputtering using Cu2O: In2O3 target and study the effects of (i) post-deposition annealing and (ii) substrate heating during a deposition for controlling the optoelectronic and morphological properties. In the first part of the study, post-process annealing of the deposited films was performed at temperatures ranging from 100-900°C in O2 ambiance. The X-ray diffraction (XRD) analysis performed on the samples identified the presence of Cu2In2O5 phases along with CuInO2 or In2O3 for the films annealed above 500°C. A morphological study performed using SEM shows the crystallization and the grain growth with an increase in the annealing temperatures. Optical studies carried out on the films indicated a small bandgap change in the range of 3.4-3.6 eV during annealing.
Author: Kazi Hussain
Publisher:
ISBN: 9783659446139
Category :
Languages : en
Pages : 0
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Book Description
Author: E. Fred Schubert
Publisher: E. Fred Schubert
ISBN: 0986382620
Category : Technology & Engineering
Languages : en
Pages : 318
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Book Description
It is beneficial for technical personnel working in the field of microelectronics, optoelectronics, and photonics to get a good understanding of the physical foundations of modern semiconductor devices. Questions that technical personnel may ask are: How are electrons propagating in the periodic potential of a crystal lattice? What are the foundations of semiconductor heterostructure devices? How does quantum mechanics relate to semiconductor heterostructures? This book tries to answer questions such as these. The book provides a basis for the understanding of modern semiconductor devices that have dimensions in the nanometer range, that is, comparable to the electron de Broglie wavelength. For such small spatial dimensions, classical physics no longer gives a full description of physical processes. The inclusion of quantum mechanical principles becomes mandatory and provides a useful description of common physical processes in electronic, optoelectronic, and photonic devices. Chapters 1 to 11 teach the quantum‐mechanical principles, including the postulates of quantum mechanics, operators, the uncertainty principle, the Schrödinger equation, non‐periodic and periodic potentials, quantum wells, and perturbation theory. Chapters 12 to 20 apply these principles to semiconductor devices and discuss the density of states, semiconductor statistics, carrier concentrations, doping, tunneling, and aspects of heterostructure devices. The 2022 edition is a complete revision of the 2015 edition and also updates the formatting to make it easily viewable with electronic display devices.
Author: K. J. Saji
Publisher: Nova Science Publishers
ISBN: 9781536123821
Category : Science
Languages : en
Pages : 232
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Book Description
Transparent flexible electronics is an emerging technology which makes use of wide band gap semiconductors that can be processed at low temperatures on glass or plastic substrates. Electronic systems that cover large area and curved surfaces together with transparency bring the possibility of numerous applications that are outside the scope of rigid wafer based electronics. Flexible electronics, electronic textiles, a wearable wellness system, and sensory skin are some of the applications of flexible electronics. The key factor in the realization of transparent electronics is the development of high performance fully transparent thin film transistors. Thin film transistors (TFTs) based on transparent conducting amorphous oxide semiconductors (TAOS) such as InGaZnO (IGZO), zinc tin oxide (ZTO), zinc indium tin oxide (ZITO), etc. provide additional functionalities like transparency, high field effect mobility and potential for room temperature processing. The performance of these TAOS based TFTs are superior to their silicon (a-Si:H TFTs) and organic TFTs.Though there are monographs and books on a-Si:H TFTs and organic TFTs, a book on TAOS based TFTs is rare. This book introduces the work of graduate students and beginners to the field of amorphous semiconductors. The mass production of this kind of TFTs on large area substrates involves the complications associated with controlling the composition of oxide compound semiconductor thin film material. Pulsed laser deposition allows for the growth of an oxide semiconductor in a very high oxygen rich environment while co-sputtering is an effective technique for the growth of a multicomponent film and to control the film chemical composition in a systematic and easy way. These manufacturing aspects will be of interest to those working in the industry. The review on the n channel, p channel TFTs, and the detailed description for the extraction of various TFT parameters like the threshold voltage, field effect mobility, sub threshold slope and on-off ratio, etc. will be ready for those working in the field of transparent electronics.
Author: Satishchandra B. Ogale
Publisher: Springer Science & Business Media
ISBN: 0387260897
Category : Technology & Engineering
Languages : en
Pages : 416
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Book Description
Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.
Author: Dr. B. Radhakrishna
Publisher: Lulu.com
ISBN: 0359510280
Category : Education
Languages : en
Pages : 132
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Book Description
Badeker in 1907 observed that some materials are optically transparent in the visible light and electrically conducting [1]. Because of the increasing interest in electrically and electronically active materials, the search for materials and the techniques for producing semi-transparent electrically conducting films have gained much importance. In an intrinsic stoichiometric material, it is not possible to have simultaneously high transparency (>80%%) in the visible region and high electrical conductivity (>103 Ω cm-1). A variety of metals in thin film form (
Author: Fredrick Madaraka Mwema
Publisher: CRC Press
ISBN: 1000597318
Category : Technology & Engineering
Languages : en
Pages : 309
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Book Description
Thin Film Coatings: Properties, Deposition, and Applications discusses the holistic subject of conventional and emerging thin film technologies without bias to a specific technology based on the existing literature. It covers properties and delves into the various methods of thin film deposition, including the most recent techniques and a direction for future developments. It also discusses the cutting-edge applications of thin film coatings such as self-healing and smart coatings, biomedical, hybrid, and scalable thin films. Finally, the concept of Industry 4.0 in thin film coating technology is examined. This book: Explores a wide range and is not specific to material and method of deposition Demonstrates the application of thin film coatings in nearly all sectors, such as energy and anti-microbial applications Details the preparation and properties of hybrid and scalable (ultra) thin materials for advanced applications Provides detailed bibliometric analyses on applications of thin film coatings Discusses Industry 4.0 and 3D printing in thin film technology With its broad coverage, this comprehensive reference will appeal to a wide audience of materials scientists and engineers and others studying and developing advanced thin film technologies.
Author: David S. Ginley
Publisher: Springer Science & Business Media
ISBN: 1441916385
Category : Technology & Engineering
Languages : en
Pages : 537
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Book Description
Transparent conducting materials are key elements in a wide variety of current technologies including flat panel displays, photovoltaics, organic, low-e windows and electrochromics. The needs for new and improved materials is pressing, because the existing materials do not have the performance levels to meet the ever- increasing demand, and because some of the current materials used may not be viable in the future. In addition, the field of transparent conductors has gone through dramatic changes in the last 5-7 years with new materials being identified, new applications and new people in the field. “Handbook of Transparent Conductors” presents transparent conductors in a historical perspective, provides current applications as well as insights into the future of the devices. It is a comprehensive reference, and represents the most current resource on the subject.
Author: Steve Durbin
Publisher: Materials Research Society
ISBN: 9781605116105
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
Symposium R, "Oxide Semiconductors" was held December 1-6 at the 2013 MRS Fall Meeting in Boston, Massachusetts. Oxide semiconductors are poised to take a more active role in modern electronics, particularly in the field of thin film transistors. While many advances have been made in terms of our understanding of fundamental optical and electronic characteristics, there remain many questions in terms of defects, doping, and optimal growth/synthesis conditions. This symposium proceedings volume represents recent advances in growth and characterization of a number of different oxide semiconductors, as well as device fabrication.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
The electronic, optical and luminescent properties of europium doped wide band gap oxide thin films and the electronic properties of indium gallium zinc oxide (IGZO), a novel amorphous oxide semiconductor were investigated. The thin films of europium doped gallium and gadolinium oxides and indium gallium zinc oxide were deposited on c-axis oriented sapphire substrates by Pulsed Laser Deposition at various conditions of temperature, pressure and doping concentration. Europium doped gallium oxide was found to be in beta phase with monoclinic crystal structure and the films exhibited intense red emission under cathode ray excitation with a peak wavelength of emission at 611 nm which corresponds to the transitions from 5D0 to 7F2 levels in europium. Europium doped gadolinium oxide thin films were found to exhibit two different phases (cubic and monoclinic) with the one of the phases being dominant depending on the growth conditions. The peak wavelength of emission was either 611 nm or 613 nm depending on the phase of the films. The amorphous indium gallium zinc oxide thin films were found to exhibit very high hall mobilities of the order of ̃15 cm2∙V−1∙s−1 and the conductivity could be controlled over several orders of magnitude from 5 x 10−3 S∙cm−1 to 10 S∙cm−1 in the amorphous phase. Annealing the films in presence of air was found to decrease the carrier concentration of the films due the incorporation of oxygen in the films thereby filling up the oxygen vacancies. Applications of amorphous indium gallium zinc oxide include Transparent Thin Film Transistors and use as transparent conducting oxide for optoelectronic devices.
