Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures: Volume 592 PDF Download
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Author: D. A. Buchanan
Publisher: Mrs Proceedings
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 408
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. The book, first published in 2000, includes detailed theoretical studies of the nature of SiO2 and its interface with silicon, electron paramagnetic resonance for the study of defects, electron tunneling, and band alignment among others.
Author: D. A. Buchanan
Publisher: Mrs Proceedings
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 408
Get Book Here
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. The book, first published in 2000, includes detailed theoretical studies of the nature of SiO2 and its interface with silicon, electron paramagnetic resonance for the study of defects, electron tunneling, and band alignment among others.
Author:
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 386
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Book Description
Author: D. J. Dumin
Publisher: World Scientific
ISBN: 9789810248420
Category : Technology & Engineering
Languages : en
Pages : 292
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Book Description
Presents in summary the state of our knowledge of oxide reliability.
Author:
Publisher:
ISBN:
Category : Electrolytic polishing
Languages : en
Pages : 184
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Book Description
Author: Spiros Haralambos Anastasiadis
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 232
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Book Description
Author: Terry M. Tritt
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 434
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Book Description
The presentations from the symposium are grouped into the following topics: skutterudites, superlattice, new materials, quantum wires and dots, half-heusler alloys and quasicrystals, TE theory, thermionics, clathrates, and thin films TE. In addition, poster sessions include the following: semiconductors with tetrahedral anions as potential thermoelectric materials, lattice dynamics study of anisotropic heat conduction in supperlattices, structure and thermoelectric properties of new quaternary tin and lead Bismuth selenides, attributes of the Seebeck coefficient of Bismuth microwire array composites, and High-Z Lanthanum-Cerium Hexaborate thin films for low-temperature applications. c. Book News Inc.
Author: Antonio Chandrea Oliver
Publisher:
ISBN:
Category :
Languages : en
Pages : 300
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Book Description
Author: Thomas H. Myers
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1070
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Book Description
This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.
Author: Sridhar Komarneni
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 720
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Book Description
Author: R. W. Schwartz
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 610
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Book Description
This book, the eighth in a popular series from MRS, features the latest technical information on ferroelectric thin films from an international mix of academia, industry and government organizations. Recent results for DRAM and FERAM devices, as well as enhancements in material performance for these applications, are presented. Significant advances in understanding leakage current, frequency dependence of the coercive field, hydrogen annealing effects, piezoelectric constants, and domain switching responses are highlighted. The development of ferroelectric thin films for piezoelectric applications are also reviewed, as are improved film-fabrication procedures including chemical vapor deposition and chemical solution deposition. Topics include: BST thin films and DRAM; integration and electrodes; Bi-based thin-film ferroelectrics; Pb-based thin-film ferroelectrics; fundamental properties of thin-film ferroelectrics; ferroelectric gate materials and devices; and piezoelectric, pyro-electric and capacitor devices and novel processing strategies.
