Author: Robert Dietrich Frielinghaus
Publisher: Forschungszentrum Jülich
ISBN: 3893368671
Category :
Languages : en
Pages : 205
Book Description
Structural Influences on Electrical Transport in Nanostructures
Characterization of Semiconductor Heterostructures and Nanostructures
Author: Giovanni Agostini
Publisher: Elsevier
ISBN: 0080558151
Category : Science
Languages : en
Pages : 501
Book Description
In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Publisher: Elsevier
ISBN: 0080558151
Category : Science
Languages : en
Pages : 501
Book Description
In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Advanced Physics of Electron Transport in Semiconductors and Nanostructures
Author: Massimo V. Fischetti
Publisher: Springer
ISBN: 3319011014
Category : Technology & Engineering
Languages : en
Pages : 481
Book Description
This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.
Publisher: Springer
ISBN: 3319011014
Category : Technology & Engineering
Languages : en
Pages : 481
Book Description
This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.
Electrical Transport in Nanoscale Systems
Author: Massimiliano Di Ventra
Publisher: Cambridge University Press
ISBN: 1139475029
Category : Science
Languages : en
Pages : 477
Book Description
In recent years there has been a huge increase in the research and development of nanoscale science and technology. Central to the understanding of the properties of nanoscale structures is the modeling of electronic conduction through these systems. This graduate textbook provides an in-depth description of the transport phenomena relevant to systems of nanoscale dimensions. In this textbook the different theoretical approaches are critically discussed, with emphasis on their basic assumptions and approximations. The book also covers information content in the measurement of currents, the role of initial conditions in establishing a steady state, and the modern use of density-functional theory. Topics are introduced by simple physical arguments, with particular attention to the non-equilibrium statistical nature of electrical conduction, and followed by a detailed formal derivation. This textbook is ideal for graduate students in physics, chemistry, and electrical engineering.
Publisher: Cambridge University Press
ISBN: 1139475029
Category : Science
Languages : en
Pages : 477
Book Description
In recent years there has been a huge increase in the research and development of nanoscale science and technology. Central to the understanding of the properties of nanoscale structures is the modeling of electronic conduction through these systems. This graduate textbook provides an in-depth description of the transport phenomena relevant to systems of nanoscale dimensions. In this textbook the different theoretical approaches are critically discussed, with emphasis on their basic assumptions and approximations. The book also covers information content in the measurement of currents, the role of initial conditions in establishing a steady state, and the modern use of density-functional theory. Topics are introduced by simple physical arguments, with particular attention to the non-equilibrium statistical nature of electrical conduction, and followed by a detailed formal derivation. This textbook is ideal for graduate students in physics, chemistry, and electrical engineering.
Introduction to Nanoelectronics
Author: Vladimir V. Mitin
Publisher: Cambridge University Press
ISBN: 0521881722
Category : Technology & Engineering
Languages : en
Pages : 346
Book Description
A comprehensive textbook on nanoelectronics covering the underlying physics, nanostructures, nanomaterials and nanodevices.
Publisher: Cambridge University Press
ISBN: 0521881722
Category : Technology & Engineering
Languages : en
Pages : 346
Book Description
A comprehensive textbook on nanoelectronics covering the underlying physics, nanostructures, nanomaterials and nanodevices.
Semiconductor Nanostructures
Author: Thomas Ihn
Publisher: Oxford University Press
ISBN: 019953442X
Category : Language Arts & Disciplines
Languages : en
Pages : 569
Book Description
This introduction to the physics of semiconductor nanostructures and their transport properties emphasizes five fundamental transport phenomena: quantized conductance, tunnelling transport, the Aharonov-Bohm effect, the quantum Hall effect and the Coulomb blockade effect.
Publisher: Oxford University Press
ISBN: 019953442X
Category : Language Arts & Disciplines
Languages : en
Pages : 569
Book Description
This introduction to the physics of semiconductor nanostructures and their transport properties emphasizes five fundamental transport phenomena: quantized conductance, tunnelling transport, the Aharonov-Bohm effect, the quantum Hall effect and the Coulomb blockade effect.
Solutions of Exercises in “An Introduction to Dynamics of Colloids”
Author: Jan K. G. Dhont
Publisher: Forschungszentrum Jülich
ISBN: 3893368825
Category :
Languages : en
Pages : 155
Book Description
Publisher: Forschungszentrum Jülich
ISBN: 3893368825
Category :
Languages : en
Pages : 155
Book Description
Electron Transport in Nanostructures and Mesoscopic Devices
Author: Thierry Ouisse
Publisher: John Wiley & Sons
ISBN: 111862338X
Category : Technology & Engineering
Languages : en
Pages : 282
Book Description
This book introduces researchers and students to the physical principles which govern the operation of solid-state devices whose overall length is smaller than the electron mean free path. In quantum systems such as these, electron wave behavior prevails, and transport properties must be assessed by calculating transmission amplitudes rather than microscopic conductivity. Emphasis is placed on detailing the physical laws that apply under these circumstances, and on giving a clear account of the most important phenomena. The coverage is comprehensive, with mathematics and theoretical material systematically kept at the most accessible level. The various physical effects are clearly differentiated, ranging from transmission formalism to the Coulomb blockade effect and current noise fluctuations. Practical exercises and solutions have also been included to facilitate the reader's understanding.
Publisher: John Wiley & Sons
ISBN: 111862338X
Category : Technology & Engineering
Languages : en
Pages : 282
Book Description
This book introduces researchers and students to the physical principles which govern the operation of solid-state devices whose overall length is smaller than the electron mean free path. In quantum systems such as these, electron wave behavior prevails, and transport properties must be assessed by calculating transmission amplitudes rather than microscopic conductivity. Emphasis is placed on detailing the physical laws that apply under these circumstances, and on giving a clear account of the most important phenomena. The coverage is comprehensive, with mathematics and theoretical material systematically kept at the most accessible level. The various physical effects are clearly differentiated, ranging from transmission formalism to the Coulomb blockade effect and current noise fluctuations. Practical exercises and solutions have also been included to facilitate the reader's understanding.
Study of Intermolecular Interactions in Hetero-organic Thin Films
Author: Benjamin Stadtmüller
Publisher: Forschungszentrum Jülich
ISBN: 389336871X
Category :
Languages : en
Pages : 213
Book Description
Publisher: Forschungszentrum Jülich
ISBN: 389336871X
Category :
Languages : en
Pages : 213
Book Description
Development and application of a massively parallel KKR Green function method for large scale systems
Author: Alexander R. Thieß
Publisher: Forschungszentrum Jülich
ISBN: 3893369066
Category :
Languages : en
Pages : 187
Book Description
Publisher: Forschungszentrum Jülich
ISBN: 3893369066
Category :
Languages : en
Pages : 187
Book Description