Author: J.-P. Deville
Publisher: Elsevier
ISBN: 0080541860
Category : Science
Languages : en
Pages : 333
Book Description
This book contains keynote lectures which have been delivered at the 3rd Porquerolles' School on Surface Science, SIR2000 (Surfaces-Interfaces-Relaxation). The aim of this school was to review the main concepts necessary to understand the role of interfacial stress, strain and relaxation in crystal growth by heteroepitaxy. By bringing together scientists from various fields (physics, chemistry, materials science and engineering) which daily use complementary methodological approaches (experiment, theory, modelization), the school allowed to offer 11 multidisciplinary courses. This book addresses the state of art of stress in epitaxial materials, it describes the various methods to measure the atomic displacement and stress fields, it reviews the spectroscopic methods necessary to map the interface chemistry, it details the theoretical methods and concepts which are needed to predict them and it questions the fact that stress and relaxation can induce specific properties in magnetism, catalysis, electron transport and so on. The field of stress and strain in heteroepitaxy has know large developments during the last ten years. New techniques have been used to set up new devices in which functionalities are obtained through structuration at a nanometer scale. Large-scale integration and reduced dimensions are the key factors to optimize the achievements of these devices. Already used in industry (quantum wells, magnetic sensors), these devices are obtained by molecular beam epitaxy, sputtering or pulsed laser deposition. Their reduced dimensionality increased the number of surfaces and interfaces, the role of which has to be precised. Experimentalists try now to associate materials having very different crystal structure and chemical composition. The elastic stress stored in the device can induce various phenomena which have to be evaluated, understood and predicted. The book intends also to show that many questions are still in debate.
Stress and Strain in Epitaxy: Theoretical Concepts, Measurements and Applications
Author: J.-P. Deville
Publisher: Elsevier
ISBN: 0080541860
Category : Science
Languages : en
Pages : 333
Book Description
This book contains keynote lectures which have been delivered at the 3rd Porquerolles' School on Surface Science, SIR2000 (Surfaces-Interfaces-Relaxation). The aim of this school was to review the main concepts necessary to understand the role of interfacial stress, strain and relaxation in crystal growth by heteroepitaxy. By bringing together scientists from various fields (physics, chemistry, materials science and engineering) which daily use complementary methodological approaches (experiment, theory, modelization), the school allowed to offer 11 multidisciplinary courses. This book addresses the state of art of stress in epitaxial materials, it describes the various methods to measure the atomic displacement and stress fields, it reviews the spectroscopic methods necessary to map the interface chemistry, it details the theoretical methods and concepts which are needed to predict them and it questions the fact that stress and relaxation can induce specific properties in magnetism, catalysis, electron transport and so on. The field of stress and strain in heteroepitaxy has know large developments during the last ten years. New techniques have been used to set up new devices in which functionalities are obtained through structuration at a nanometer scale. Large-scale integration and reduced dimensions are the key factors to optimize the achievements of these devices. Already used in industry (quantum wells, magnetic sensors), these devices are obtained by molecular beam epitaxy, sputtering or pulsed laser deposition. Their reduced dimensionality increased the number of surfaces and interfaces, the role of which has to be precised. Experimentalists try now to associate materials having very different crystal structure and chemical composition. The elastic stress stored in the device can induce various phenomena which have to be evaluated, understood and predicted. The book intends also to show that many questions are still in debate.
Publisher: Elsevier
ISBN: 0080541860
Category : Science
Languages : en
Pages : 333
Book Description
This book contains keynote lectures which have been delivered at the 3rd Porquerolles' School on Surface Science, SIR2000 (Surfaces-Interfaces-Relaxation). The aim of this school was to review the main concepts necessary to understand the role of interfacial stress, strain and relaxation in crystal growth by heteroepitaxy. By bringing together scientists from various fields (physics, chemistry, materials science and engineering) which daily use complementary methodological approaches (experiment, theory, modelization), the school allowed to offer 11 multidisciplinary courses. This book addresses the state of art of stress in epitaxial materials, it describes the various methods to measure the atomic displacement and stress fields, it reviews the spectroscopic methods necessary to map the interface chemistry, it details the theoretical methods and concepts which are needed to predict them and it questions the fact that stress and relaxation can induce specific properties in magnetism, catalysis, electron transport and so on. The field of stress and strain in heteroepitaxy has know large developments during the last ten years. New techniques have been used to set up new devices in which functionalities are obtained through structuration at a nanometer scale. Large-scale integration and reduced dimensions are the key factors to optimize the achievements of these devices. Already used in industry (quantum wells, magnetic sensors), these devices are obtained by molecular beam epitaxy, sputtering or pulsed laser deposition. Their reduced dimensionality increased the number of surfaces and interfaces, the role of which has to be precised. Experimentalists try now to associate materials having very different crystal structure and chemical composition. The elastic stress stored in the device can induce various phenomena which have to be evaluated, understood and predicted. The book intends also to show that many questions are still in debate.
Metal Oxide-Based Thin Film Structures
Author: Nini Pryds
Publisher: Elsevier
ISBN: 0081017529
Category : Technology & Engineering
Languages : en
Pages : 562
Book Description
Metal Oxide-Based Thin Film Structures: Formation, Characterization and Application of Interface-Based Phenomena bridges the gap between thin film deposition and device development by exploring the synthesis, properties and applications of thin film interfaces. Part I deals with theoretical and experimental aspects of epitaxial growth, the structure and morphology of oxide-metal interfaces deposited with different deposition techniques and new developments in growth methods. Part II concerns analysis techniques for the electrical, optical, magnetic and structural properties of thin film interfaces. In Part III, the emphasis is on ionic and electronic transport at the interfaces of Metal-oxide thin films. Part IV discusses methods for tailoring metal oxide thin film interfaces for specific applications, including microelectronics, communication, optical electronics, catalysis, and energy generation and conservation. This book is an essential resource for anyone seeking to further their knowledge of metal oxide thin films and interfaces, including scientists and engineers working on electronic devices and energy systems and those engaged in research into electronic materials. - Introduces the theoretical and experimental aspects of epitaxial growth for the benefit of readers new to the field - Explores state-of-the-art analysis techniques and their application to interface properties in order to give a fuller understanding of the relationship between macroscopic properties and atomic-scale manipulation - Discusses techniques for tailoring thin film interfaces for specific applications, including information, electronics and energy technologies, making this book essential reading for materials scientists and engineers alike
Publisher: Elsevier
ISBN: 0081017529
Category : Technology & Engineering
Languages : en
Pages : 562
Book Description
Metal Oxide-Based Thin Film Structures: Formation, Characterization and Application of Interface-Based Phenomena bridges the gap between thin film deposition and device development by exploring the synthesis, properties and applications of thin film interfaces. Part I deals with theoretical and experimental aspects of epitaxial growth, the structure and morphology of oxide-metal interfaces deposited with different deposition techniques and new developments in growth methods. Part II concerns analysis techniques for the electrical, optical, magnetic and structural properties of thin film interfaces. In Part III, the emphasis is on ionic and electronic transport at the interfaces of Metal-oxide thin films. Part IV discusses methods for tailoring metal oxide thin film interfaces for specific applications, including microelectronics, communication, optical electronics, catalysis, and energy generation and conservation. This book is an essential resource for anyone seeking to further their knowledge of metal oxide thin films and interfaces, including scientists and engineers working on electronic devices and energy systems and those engaged in research into electronic materials. - Introduces the theoretical and experimental aspects of epitaxial growth for the benefit of readers new to the field - Explores state-of-the-art analysis techniques and their application to interface properties in order to give a fuller understanding of the relationship between macroscopic properties and atomic-scale manipulation - Discusses techniques for tailoring thin film interfaces for specific applications, including information, electronics and energy technologies, making this book essential reading for materials scientists and engineers alike
Coherent Electron Microscopy: Designing Faster and Brighter Electron Sources
Author: Peter W. Hawkes
Publisher: Elsevier
ISBN: 0443193258
Category : Technology & Engineering
Languages : en
Pages : 252
Book Description
Coherent Electron Microscopy: Designing Faster and Brighter Electron Sources, Volume 227 in the Advances in Imaging and Electron Physics series, merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. Chapters in this new release cover Characterization of nanomaterials properties using FE-TEM, Cold field-emission electron sources: From higher brightness to ultrafast beams, Every electron counts: Towards the development of aberration optimized and aberration corrected electron sources, and more. The series features articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy and the computing methods used in all these domains. - Provides the authority and expertise of leading contributors from an international board of authors - Presents the latest release in the Advances in Imaging and Electron Physics series
Publisher: Elsevier
ISBN: 0443193258
Category : Technology & Engineering
Languages : en
Pages : 252
Book Description
Coherent Electron Microscopy: Designing Faster and Brighter Electron Sources, Volume 227 in the Advances in Imaging and Electron Physics series, merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. Chapters in this new release cover Characterization of nanomaterials properties using FE-TEM, Cold field-emission electron sources: From higher brightness to ultrafast beams, Every electron counts: Towards the development of aberration optimized and aberration corrected electron sources, and more. The series features articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy and the computing methods used in all these domains. - Provides the authority and expertise of leading contributors from an international board of authors - Presents the latest release in the Advances in Imaging and Electron Physics series
Industry days 2003-2004
Author:
Publisher: Società Editrice Esculapio
ISBN: 8874881096
Category :
Languages : en
Pages : 241
Book Description
Publisher: Società Editrice Esculapio
ISBN: 8874881096
Category :
Languages : en
Pages : 241
Book Description
Transmission Electron Microscopy Characterization of Nanomaterials
Author: Challa S.S.R. Kumar
Publisher: Springer Science & Business Media
ISBN: 3642389341
Category : Science
Languages : en
Pages : 718
Book Description
Third volume of a 40volume series on nanoscience and nanotechnology, edited by the renowned scientist Challa S.S.R. Kumar. This handbook gives a comprehensive overview about Transmission electron microscopy characterization of nanomaterials. Modern applications and state-of-the-art techniques are covered and make this volume an essential reading for research scientists in academia and industry.
Publisher: Springer Science & Business Media
ISBN: 3642389341
Category : Science
Languages : en
Pages : 718
Book Description
Third volume of a 40volume series on nanoscience and nanotechnology, edited by the renowned scientist Challa S.S.R. Kumar. This handbook gives a comprehensive overview about Transmission electron microscopy characterization of nanomaterials. Modern applications and state-of-the-art techniques are covered and make this volume an essential reading for research scientists in academia and industry.
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 464
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 464
Book Description
Multiscale Phenomena in Materials - Experiments and Modeling Related to Mechanical Behavior: Volume 779
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 320
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This 2003 volume focuses on experimentally validated multiscale modeling of ductile metals and alloys.
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 320
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This 2003 volume focuses on experimentally validated multiscale modeling of ductile metals and alloys.
The British National Bibliography
Author: Arthur James Wells
Publisher:
ISBN:
Category : Bibliography, National
Languages : en
Pages : 1600
Book Description
Publisher:
ISBN:
Category : Bibliography, National
Languages : en
Pages : 1600
Book Description
American Book Publishing Record
Author:
Publisher:
ISBN:
Category : Books
Languages : en
Pages : 2744
Book Description
Publisher:
ISBN:
Category : Books
Languages : en
Pages : 2744
Book Description
Strain Effect in Semiconductors
Author: Yongke Sun
Publisher: Springer Science & Business Media
ISBN: 1441905529
Category : Technology & Engineering
Languages : en
Pages : 353
Book Description
Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.
Publisher: Springer Science & Business Media
ISBN: 1441905529
Category : Technology & Engineering
Languages : en
Pages : 353
Book Description
Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.