Standing Wave Integrated Circuits for Power Generation, Radiation and Beam Steering at Millimeter Wave and Terahertz Spectrum

Standing Wave Integrated Circuits for Power Generation, Radiation and Beam Steering at Millimeter Wave and Terahertz Spectrum PDF Author: Hossein Jalili
Publisher:
ISBN: 9781658416443
Category :
Languages : en
Pages :

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Book Description
The enormous potentials of millimeter wave (mm-wave) and terahertz (THz) frequency spectrum have sparked significant interest in breaking into this new frontier of technology. High-speed communication, imaging, spectroscopy and radar are just a few examples among many possible applications. Today, however, mm-wave and THz systems are mostly discrete, bulky and expensive, which significantly limits their accessibility and applications. Realization of integrated mm-wave/THz systems in low-cost and reliable silicon technologies can be a technological milestone, paving the way for tremendous opportunities both in high-tech market and academic research. This work is focused on tackling the major challenges of implementing mm-wave/THz integrated sources, including magnitude, bandwidth, radiation and beam steering of the source power. As we move to higher frequencies, the power that can be generated on chip continuously drops. Here, we have demonstrated a versatile method to maximize this power based on independent optimization of harmonic impedances. Scalable standing wave array structures are implemented based on efficient low-loss coupling schemes in order to further boost the produced power by increasing the number of contributing individual sources. Furthermore, we have presented a practical approach to maximizing radiation gain and consequently Equivalent Isotropic Radiated Power (EIRP) of the source by optimizing influential parameters of the radiation apparatus. Achieving wideband operation also becomes more challenging with increasing frequency. This is an important obstacle in our ability to take advantage of the uncongested and large available bandwidth at mm-wave/THz. We implemented standing wave oscillators and employed a varactor-less frequency tuning method to realize wideband operation. We considerably improved the bandwidth benchmark among state-of-the-art integrated radiator arrays in silicon technology. Furthermore, electronic beam steering is a crucial component of the modern wireless systems. However, realizing the necessary wide range of variable phase shift between sources is a difficult task at mm-wave/THz spectrum. Here, we have demonstrated a new phase shifting method based on combining standing and traveling waves and were able to achieve a record beam steering range among relevant published works to date. In this dissertation, we present the ideas, analysis, design methods and experimental results of four implemented prototype integrated circuits. First, a 230-GHz Voltage Controlled Oscillator (VCO) in a 65-nm CMOS technology is presented based on a coupled standing wave structure. This circuit is capable of providing high output power (3.4 dBm maximum) and wideband operation (8.3% frequency tuning range) simultaneously. Taking output power, bandwidth, power consumption and phase noise into account altogether, the circuit has a record performance figure-of-merit (FOM) compared to the state of the art. Then, a 0.34-THz 4-element scalable standing wave radiator array with 20.3 GHz (record bandwidth at the time of publication) and -10.5 dBm maximum radiated power is demonstrated, followed by a 0.34-THz wideband (15.1% frequency tuning range) and wide-angle (128° /53° range) 2D beam steering phased array, both in in 0.13μm SiGe BiCMOS. The phased array circuit has the largest bandwidth and widest steering range among integrated arrays above 300 GHz in silicon technology. Finally, a 0.46-THz 25-element scalable radiator array in a 65-nm CMOS is presented with high radiation gain through an optimized silicon lens set up. This coherent source delivers record EIRP of +19.3 dBm and 8.9% wide frequency tuning range, both largest values reported for integrated arrays above 400 GHz in silicon.

Standing Wave Integrated Circuits for Power Generation, Radiation and Beam Steering at Millimeter Wave and Terahertz Spectrum

Standing Wave Integrated Circuits for Power Generation, Radiation and Beam Steering at Millimeter Wave and Terahertz Spectrum PDF Author: Hossein Jalili
Publisher:
ISBN: 9781658416443
Category :
Languages : en
Pages :

Get Book Here

Book Description
The enormous potentials of millimeter wave (mm-wave) and terahertz (THz) frequency spectrum have sparked significant interest in breaking into this new frontier of technology. High-speed communication, imaging, spectroscopy and radar are just a few examples among many possible applications. Today, however, mm-wave and THz systems are mostly discrete, bulky and expensive, which significantly limits their accessibility and applications. Realization of integrated mm-wave/THz systems in low-cost and reliable silicon technologies can be a technological milestone, paving the way for tremendous opportunities both in high-tech market and academic research. This work is focused on tackling the major challenges of implementing mm-wave/THz integrated sources, including magnitude, bandwidth, radiation and beam steering of the source power. As we move to higher frequencies, the power that can be generated on chip continuously drops. Here, we have demonstrated a versatile method to maximize this power based on independent optimization of harmonic impedances. Scalable standing wave array structures are implemented based on efficient low-loss coupling schemes in order to further boost the produced power by increasing the number of contributing individual sources. Furthermore, we have presented a practical approach to maximizing radiation gain and consequently Equivalent Isotropic Radiated Power (EIRP) of the source by optimizing influential parameters of the radiation apparatus. Achieving wideband operation also becomes more challenging with increasing frequency. This is an important obstacle in our ability to take advantage of the uncongested and large available bandwidth at mm-wave/THz. We implemented standing wave oscillators and employed a varactor-less frequency tuning method to realize wideband operation. We considerably improved the bandwidth benchmark among state-of-the-art integrated radiator arrays in silicon technology. Furthermore, electronic beam steering is a crucial component of the modern wireless systems. However, realizing the necessary wide range of variable phase shift between sources is a difficult task at mm-wave/THz spectrum. Here, we have demonstrated a new phase shifting method based on combining standing and traveling waves and were able to achieve a record beam steering range among relevant published works to date. In this dissertation, we present the ideas, analysis, design methods and experimental results of four implemented prototype integrated circuits. First, a 230-GHz Voltage Controlled Oscillator (VCO) in a 65-nm CMOS technology is presented based on a coupled standing wave structure. This circuit is capable of providing high output power (3.4 dBm maximum) and wideband operation (8.3% frequency tuning range) simultaneously. Taking output power, bandwidth, power consumption and phase noise into account altogether, the circuit has a record performance figure-of-merit (FOM) compared to the state of the art. Then, a 0.34-THz 4-element scalable standing wave radiator array with 20.3 GHz (record bandwidth at the time of publication) and -10.5 dBm maximum radiated power is demonstrated, followed by a 0.34-THz wideband (15.1% frequency tuning range) and wide-angle (128° /53° range) 2D beam steering phased array, both in in 0.13μm SiGe BiCMOS. The phased array circuit has the largest bandwidth and widest steering range among integrated arrays above 300 GHz in silicon technology. Finally, a 0.46-THz 25-element scalable radiator array in a 65-nm CMOS is presented with high radiation gain through an optimized silicon lens set up. This coherent source delivers record EIRP of +19.3 dBm and 8.9% wide frequency tuning range, both largest values reported for integrated arrays above 400 GHz in silicon.

RF and mm-Wave Power Generation in Silicon

RF and mm-Wave Power Generation in Silicon PDF Author: Hua Wang
Publisher: Academic Press
ISBN: 0124095224
Category : Technology & Engineering
Languages : en
Pages : 578

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Book Description
RF and mm-Wave Power Generation in Silicon presents the challenges and solutions of designing power amplifiers at RF and mm-Wave frequencies in a silicon-based process technology. It covers practical power amplifier design methodologies, energy- and spectrum-efficient power amplifier design examples in the RF frequency for cellular and wireless connectivity applications, and power amplifier and power generation designs for enabling new communication and sensing applications in the mm-Wave and THz frequencies. With this book you will learn: - Power amplifier design fundamentals and methodologies - Latest advances in silicon-based RF power amplifier architectures and designs and their integration in wireless communication systems - State-of-the-art mm-Wave/THz power amplifier and power generation circuits and systems in silicon - Extensive coverage from fundamentals to advanced design topics, focusing on various layers of abstraction: from device modeling and circuit design strategy to advanced digital and mixed-signal architectures for highly efficient and linear power amplifiers - New architectures for power amplifiers in the cellar and wireless connectivity covering detailed design methodologies and state-of-the-art performances - Detailed design techniques, trade-off analysis and design examples for efficiency enhancement at power back-off and linear amplification for spectrally-efficient non-constant envelope modulations - Extensive coverage of mm-Wave power-generation techniques from the early days of the 60 GHz research to current state-of the-art reconfigurable, digital mm-Wave PA architectures - Detailed analysis of power generation challenges in the higher mm-Wave and THz frequencies and novel technical solutions for a wide range for potential applications, including ultrafast wireless communication to sensing, imaging and spectroscopy - Contributions from the world-class experts from both academia and industry

Signal Generation for Millimeter Wave and THZ Applications in InP-DHBT and InP-on-BiCMOS Technologies

Signal Generation for Millimeter Wave and THZ Applications in InP-DHBT and InP-on-BiCMOS Technologies PDF Author: Muhammad Maruf Hossain
Publisher: Cuvillier Verlag
ISBN: 3736983352
Category : Technology & Engineering
Languages : en
Pages : 136

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Book Description
A variety of commercial and defense applications are expected to have sub-terahertz (THz) and mm-wave integrated circuits in the near future. Silicon (Si) technologies partly meet the demands but are limited in their power handling capability. III-V technologies, in particular InP, offer higher output power but fall short of their Si counterparts if it comes to integration density and complexity. Thus, research on hetero-integration of Si with InP has gained increasing interest. This work focuses on MMIC signal sources as important building blocks that are based on FBH’s 0.8 μm InP-DHBT transferred-substrate (TS) process, offering an InP-DHBT as well as an InP-on-BiCMOS version. This process is unique and provides interesting possibilities to realize integrated circuits in the frequency range between 100 GHz and more than 300 GHz. First, fundamental sources at 96 GHz and 197 GHz are presented. They deliver +9 dBm and 0 dBm output power with 25% and 0.5% overall DC-to-RF efficiency, respectively. Furthermore, 162 GHz and 270 GHz push-push sources are demonstrated utilizing an InP-on-BiCMOS process, which achieve -4.5 dBm and -9.5 dBm output power. Subsequently, multiplier-based signal sources are demonstrated including a full G-band (140-220 GHz) frequency doubler, which delivers +8.2 dBm at 180 GHz and more than +5 dBm in the range 160-200 GHz. The doubler circuit exhibits a power efficiency of 16% in this frequency range. Also, the highest frequency is reached by a wideband 328 GHz quadrupler, with -7 dBm output power at 325 GHz and 0.5% DC-to-RF efficiency. The final part is devoted to hetero-integrated circuits and the necessary design considerations. Two 250 GHz and 330 GHz sources are demonstrated that deliver -1.6 dBm and -12 dBm output power, respectively. These are the first hetero-integrated signal sources in this frequency range reported so far.

Silicon-Based Millimeter-Wave Devices

Silicon-Based Millimeter-Wave Devices PDF Author: Johann-Friedrich Luy
Publisher: Springer Science & Business Media
ISBN: 3642790313
Category : Technology & Engineering
Languages : en
Pages : 359

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Book Description
A description of field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are covered, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter, while two whole chapters are devoted to silicon/germanium devices. The integration of devices in monolithic circuits is explained together with advanced technologies, such as the self-mixing oscillator operation, before concluding with sensor and system applications.

Si Waveguide Technology for High Performance Millimeter-wave/terahertz Integrated Systems

Si Waveguide Technology for High Performance Millimeter-wave/terahertz Integrated Systems PDF Author: Nazy Ranjkesh
Publisher:
ISBN:
Category :
Languages : en
Pages : 186

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Book Description
The terahertz (THZ) spectrum (0.3 - 3 THz) offers new opportunities to a wide range of emerging applications which demand high-quality THz sources, detectors, amplifiers, and integrated circuits. On-chip integration of planar transmission line passive components degrades their performance due to the conduction loss. Therefore, a hybrid integrated technology in which all of the high-quality passive components are implemented using a suitable off-chip planar integrated technology and the active devices are placed on-chip, has become the most promising approach. In this thesis, a low-cost and low-loss silicon-on-glass (SOG) integrated circuit technology is proposed for THz/millimeter-wave (mmW) applications. Highly-resistive intrinsic silicon (Si) is selected as the main guiding region due to its high transparency at mmW/THz frequency ranges and the maturity of Si-devices fabrication. In the proposed technology, all of the passive components and waveguide connections are made of highly-resistive Si on a glass substrate. The proposed technique leads to a high-precision and low-cost fabrication process, wherein the alignment between the sub-structures is automatically achieved during the fabrication process. This is performed by photolithography and dry etching of the entire integrated passive circuit layout through the Si layer of the SOG wafer. The SOG dielectric ridge waveguide, as the basic component of the SOG integrated circuit, is theoretically and experimentally investigated. A test setup is designed to measure propagation characteristics of the proposed SOG waveguide. Measured dispersion diagrams of the SOG dielectric waveguides show average attenuation constants of 0.63 dB/cm, 0.28 dB/cm, and 0.53 dB/cm over the frequency ranges of 55 - 65 GHz, 90 - 110 GHz, and 140 - 170 GHz, respectively. Extending the SOG platform toward the THz range is achieved by new SOG waveguide structures wherein the glass substrates below the Si channels are etched to reduce the effect of greater glass material loss at higher frequencies (i.e., > 200 GHz). To fabricate these structures, the glass substrate is etched in hydrophilic acid before bonding to the Si. Four new SOG configurations, called the suspended SOG, corrugated SOG, rib SOG, and U-SOG waveguides are proposed with their respective fabrication techniques for the THz range of frequencies. In the suspended SOG waveguide, a periodic configuration of Si beams supports the Si guiding channel over the etched grove on the glass substrate. Measurements of two suspended SOG waveguides show low attenuation constants of 0.031 dB/[lambda]0 and 0.042 dB/[lambda]0 (on average) over the frequency ranges of 350 - 500 GHz and 400 - 500 GHz, respectively. It is theoretically demonstrated that the rib SOG and U-SOG waveguides are promising candidates for THz high-density and low-loss integrated circuits. Rib SOG waveguide and U-SOG waveguide test devices are designed over the frequency bands of 0.8 - 0.9 THz and 0.9 - 1.1 THz. The proposed SOG waveguide technology can easily be extended to several THz with no limitations. A new mmW low-loss dielectric phase shifter integrated in the corrugated SOG platform is designed, fabricated, and measured. Phase shifts of 111 ° and 129 ° at frequencies of 85 GHz and 100 GHz, with maximum insertion losses of 0.65 dB and 2.5 dB, are achieved during measurements of the proposed phase shifter. Millimeter-wave integrated SOG tapered antennas are developed and implemented. The idea of a suspended SOG tapered antenna is demonstrated to enhance the radiation efficiency and the gain of the SOG tapered antenna over 110 - 130 GHz. The suspended SOG tapered antenna, which can function under two orthogonal mode excitations, shows measured efficiencies of higher than 90 % for the two vertical polarizations.

Millimeter-wave Integrated Circuit Technology

Millimeter-wave Integrated Circuit Technology PDF Author: Dylan Forrest Williams
Publisher:
ISBN:
Category :
Languages : en
Pages : 356

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Book Description


Topics in Millimeter Wave Technology

Topics in Millimeter Wave Technology PDF Author: Kenneth J Button
Publisher: Academic Press
ISBN: 1483257452
Category : Technology & Engineering
Languages : en
Pages : 264

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Book Description
Topics in Millimeter Wave Technology is a compendium of papers dealing with plasma waves, TUNNETT diodes, and solid-state devices. One paper describes the application of the TUNNET diode, a semiconductor with a coherent signal source of over 100 GHz to 1000 GHz. The paper notes the possibility of achieving more than 1000 GHz through sophisticated device fabrication technology. Another paper discusses the use of computer-aided testing of superconductor-insulator-superconductor (SIS) junction whose mixing properties are effected by the ski-sloped shape of the current-voltage curve. Such testing methods are useful at fixed or variable temperatures from 15 K to 300 K. One paper reviews the collective Thomson scattering theory, including the application of the multichannel far-infrared scattering system in the basic tokamak plasma physics. Another paper discusses the static induction transistor for very high frequency operation as the millimeter to submillimeter wave region is the ideal static induction transistor in ballistic devices. This review material can be helpful for nuclear scientists, nuclear engineers, students of physics, and researchers involved in plasma physics and semiconductor technology.

Millimeter-wave and Terahertz Technology for Integrated Circuits

Millimeter-wave and Terahertz Technology for Integrated Circuits PDF Author: Bhavana Benakaprasad
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 245

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Book Description


Data Transmission at Millimeter Waves

Data Transmission at Millimeter Waves PDF Author: Khaled Khalaf
Publisher: Springer
ISBN: 3662469383
Category : Technology & Engineering
Languages : en
Pages : 120

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Book Description
This book describes the design of a receiver front-end circuit for operation in the 60GHz range in 90nm CMOS. Physical layout of the test circuit and post-layout simulations for the implementation of a test chip including the QVCO and the first stage divider are also presented. The content of this book is particularly of interest to those working on mm-wave frequency generation and signal reception.

Radio Frequency Integrated Circuits and Technologies

Radio Frequency Integrated Circuits and Technologies PDF Author: Frank Ellinger
Publisher: Springer Science & Business Media
ISBN: 3540693246
Category : Technology & Engineering
Languages : en
Pages : 523

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Book Description
The striking feature of this book is its coverage of the upper GHz domain. However, the latest technologies, applications and broad range of circuits are discussed. Design examples are provided including cookbook-like optimization strategies. This state-of-the-art book is valuable for researchers as well as for engineers in industry. Furthermore, the book serves as fruitful basis for lectures in the area of IC design.