The Physics of Semiconductors PDF Download
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Author: Marius Grundmann
Publisher: Springer Nature
ISBN: 3030515699
Category : Technology & Engineering
Languages : en
Pages : 905
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Book Description
The 4th edition of this highly successful textbook features copious material for a complete upper-level undergraduate or graduate course, guiding readers to the point where they can choose a specialized topic and begin supervised research. The textbook provides an integrated approach beginning from the essential principles of solid-state and semiconductor physics to their use in various classic and modern semiconductor devices for applications in electronics and photonics. The text highlights many practical aspects of semiconductors: alloys, strain, heterostructures, nanostructures, amorphous semiconductors, and noise, which are essential aspects of modern semiconductor research but often omitted in other textbooks. This textbook also covers advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, and transparent conductive oxides. The 4th edition includes many updates and chapters on 2D materials and aspects of topology. The text derives explicit formulas for many results to facilitate a better understanding of the topics. Having evolved from a highly regarded two-semester course on the topic, The Physics of Semiconductors requires little or no prior knowledge of solid-state physics. More than 2100 references guide the reader to historic and current literature including original papers, review articles and topical books, providing a go-to point of reference for experienced researchers as well.
Author: Marius Grundmann
Publisher: Springer Nature
ISBN: 3030515699
Category : Technology & Engineering
Languages : en
Pages : 905
Get Book Here
Book Description
The 4th edition of this highly successful textbook features copious material for a complete upper-level undergraduate or graduate course, guiding readers to the point where they can choose a specialized topic and begin supervised research. The textbook provides an integrated approach beginning from the essential principles of solid-state and semiconductor physics to their use in various classic and modern semiconductor devices for applications in electronics and photonics. The text highlights many practical aspects of semiconductors: alloys, strain, heterostructures, nanostructures, amorphous semiconductors, and noise, which are essential aspects of modern semiconductor research but often omitted in other textbooks. This textbook also covers advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, and transparent conductive oxides. The 4th edition includes many updates and chapters on 2D materials and aspects of topology. The text derives explicit formulas for many results to facilitate a better understanding of the topics. Having evolved from a highly regarded two-semester course on the topic, The Physics of Semiconductors requires little or no prior knowledge of solid-state physics. More than 2100 references guide the reader to historic and current literature including original papers, review articles and topical books, providing a go-to point of reference for experienced researchers as well.
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ISBN:
Category : Nuclear energy
Languages : en
Pages : 744
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Book Description
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ISBN:
Category : Weights and measures
Languages : en
Pages : 456
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Book Description
Author: E. Nakamura
Publisher: Springer Science & Business Media
ISBN: 9783540511274
Category : Science
Languages : en
Pages : 494
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Book Description
Volume III/28 is a supplement to volume III/16a+b Ferroelectrics and Related Substances. It also consists of two parts a and b. The present subvolume III/28a contains data on ferroelectric oxides, supplementing III/16a which appeared in 1981. Subvolume III/28b, due in 1990, will cover non-oxides, supplementing III/16b (published in 1982). Reliable data on both pure compounds and solid solutions, published mostly between 1978 and 1986 and some data from the literature up to early 1988 are critically evaluated and included. The dielectric and ferroelectric behaviour, as well as all other properties relevant to the characterization of these substances are presented in tables and figures. About 22,000 references have been surveyed with the aid of a computer. All values are given in SI units. Rapid localization of the required data is facilitated by an alphabetical index of substances and a two-dimensional survey of substances and properties dealt with in both subvolumes III/28a and III/16a.
Author: British Library. Document Supply Centre
Publisher:
ISBN:
Category : Conference proceedings
Languages : en
Pages : 696
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Book Description
Author: Gottfried Landwehr
Publisher: Springer Science & Business Media
ISBN: 3642831141
Category : Science
Languages : en
Pages : 572
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Book Description
High magnetic fields have been an important tool in semiconductor physics for a long time. The area has been growing very rapidly since quantum effects in silicon field-effect transistors have become of practical interest. Since the discovery of the quantum Hall effect by Klaus von Klitzing in 1980, this subject has grown exponentially. The book contains 42 invited papers and 37 contributed papers which were presented at the 7th of the traditional Würzburg conferences. For the area of high magnetic fields applied in semiconductor physics recent results are discussed, and the state-of-the-art is reviewed. More than 50% of the papers concern two-dimensional electronic systems. Other subjects of current interest are magneto-optics and magneto transport in three-dimensional semiconductors. Special attention has been paid to the rapidly growing field of semimagnetic semiconductors.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1570
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Book Description
Author: Wai-Kai Chen
Publisher: CRC Press
ISBN: 1420005960
Category : Technology & Engineering
Languages : en
Pages : 2322
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Book Description
For the new millenium, Wai-Kai Chen introduced a monumental reference for the design, analysis, and prediction of VLSI circuits: The VLSI Handbook. Still a valuable tool for dealing with the most dynamic field in engineering, this second edition includes 13 sections comprising nearly 100 chapters focused on the key concepts, models, and equations. Written by a stellar international panel of expert contributors, this handbook is a reliable, comprehensive resource for real answers to practical problems. It emphasizes fundamental theory underlying professional applications and also reflects key areas of industrial and research focus. WHAT'S IN THE SECOND EDITION? Sections on... Low-power electronics and design VLSI signal processing Chapters on... CMOS fabrication Content-addressable memory Compound semiconductor RF circuits High-speed circuit design principles SiGe HBT technology Bipolar junction transistor amplifiers Performance modeling and analysis using SystemC Design languages, expanded from two chapters to twelve Testing of digital systems Structured for convenient navigation and loaded with practical solutions, The VLSI Handbook, Second Edition remains the first choice for answers to the problems and challenges faced daily in engineering practice.
Author: M. Adachi
Publisher: Springer Science & Business Media
ISBN: 9783540518778
Category : Science
Languages : en
Pages : 860
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Book Description
Volume III/28 is a supplement to volume III/16a+b Ferroelectrics and Related Substances. It also consists of two parts a and b. Subvolume III/28a which came out in December 1989, contains data on ferroelectric oxides, supplementing III/16a which appeared in 1981. The present subvolume III/28b covers non-oxides, supplementing III/16b (published in 1982). Reliable data on both pure compounds and solid solutions, published mostly between 1978 and 1986 and some data from the literature up to early 1988 are critically evaluated and included. The dielectric and ferroelectric behaviour, as well as all other properties relevant to the characterization of these substances are presented in tables and figures. About 22,000 references have been surveyed with the aid of a computer. All values are given in SI units. Rapid localization of the required data is facilitated by an alphabetical index of substances and a two-dimensional survey of substances and properties dealt with in both subvolumes III/28b and III/16b.
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ISBN:
Category : Power resources
Languages : en
Pages : 536
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Book Description
