Special Issue on the 13th International Symposium on the Physics of Semiconductors and Applications - 2006 PDF Download
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Author: Kyoungwan Park
Publisher:
ISBN:
Category :
Languages : en
Pages : 383
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Book Description
Author: Kyoungwan Park
Publisher:
ISBN:
Category :
Languages : en
Pages : 383
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Book Description
Author: Stefan Ferdinand Müller
Publisher: BoD – Books on Demand
ISBN: 3739248947
Category : Technology & Engineering
Languages : en
Pages : 137
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Book Description
This thesis evaluates the viability of ferroelectric Si:HfO2 and its derived FeFET application for non-volatile data storage. At the beginning, the ferroelectric effect is explained briefly such that the applications that make use of it can be understood. Afterwards, the latest findings on ferroelectric HfO2 are reviewed and their potential impact on future applications is discussed. Experimental data is presented afterwards focusing on the ferroelectric material characteristics of Si:HfO2 that are most relevant for memory applications. Besides others, the stability of the ferroelectric switching effect could be demonstrated in a temperature range of almost 400 K. Moreover, nanosecond switching speed and endurance in the range of 1 million to 10 billion cycles could be proven. Retention and imprint characteristics have furthermore been analyzed and are shown to be stable for 1000 hours bake time at 125 oC. Derived from the ferroelectric effect in HfO2, a 28 nm FeFET memory cell is introduced as the central application of this thesis. Based on numerical simulations, the memory concept is explained and possible routes towards an optimized FeFET cell are discussed. Subsequently, the results from electrical characterization of FeFET multi-structures are presented and discussed. By using Si:HfO2 it was possible to realize the world's first 28 nm FeFET devices possessing i.a. 10k cycling endurance and an extrapolated 10 year data retention at room temperature. The next step towards a FeFET memory is represented by connecting several memory cells into matrix-type configurations. A cell concept study illustrates the different ways in which FeFET cells can be combined together to give high density memory arrays. For the proposed architectures, operational schemes are theoretically discussed and analyzed by both electrical characterization of FeFET multi-structures and numerical simulations. The thesis concludes with the electrical characterization of small FeFET memory arrays. First results show that a separation between memory states can be achieved by applying poling and incremental step pulse programming (ISPP) sequences. These results represent an important cornerstone for future studies on Si:HfO2 and its related applications.
Author: Wiley Kirk
Publisher: Academic Press
ISBN: 0323145833
Category : Science
Languages : en
Pages : 566
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Book Description
Nanostructures and Mesoscopic Systems presents the proceedings of the International Symposium held in Santa Fe, New Mexico on May 20-24, 1991. The book discusses nanostructure physics; nanostructures in motion; and advances in nanostructure fabrication. The text also describes ballistic transport and coherence; low-dimensional tunneling; and electron correlation and coulomb blockade. Banostructure arrays and collective effects; the theory and modeling of nanostructures; and mesoscopic systems are also encompassed. The book further tackles the optical properties of nanostructures.
Author: Simon Li
Publisher: Springer Science & Business Media
ISBN: 1461404819
Category : Technology & Engineering
Languages : en
Pages : 303
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Book Description
Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.
Author:
Publisher:
ISBN:
Category : Paperbacks
Languages : en
Pages : 1240
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Book Description
Author: A.J. Kallio
Publisher: Springer Science & Business Media
ISBN: 1461309735
Category : Science
Languages : en
Pages : 396
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Book Description
The present volume contains the texts of the invited talks delivered at the Fifth International Conference on Recent Progress in Many-Body Theories held in Oulu, Finland during the period 3-8 August 1987. The general format and style of the meeting followed closely those which had evolved from the earlier conferences in the series: Trieste 1978, Oaxtepec 1981, Altenberg 1983 and San Francisco 1985. Thus, the conferences in this series are in tended, as far as is practicable, to cover in a broad and balanced fashion both the entire spectrum of theoretical tools developed to tackle the quan tum many-body problem, and their major fields of· application. One of the major aims of the series is to foster the exchange of ideas and techniques among physicists working in such diverse areas of application of many-body theories as nucleon-nucleon interactions, nuclear physics, astronomy, atomic and molecular physics, quantum chemistry, quantum fluids and plasmas, and solid-state and condensed matter physics. A special feature of the present meeting however was that particular attention was paid in the programme to such topics of current interest in solid-state physics as high-temperature superconductors, heavy fermions, the quantum Hall effect, and disorder. A panel discussion was also organised during the conference, under the chair manship of N. W. Ashcroft, to consider the latest developments in the extreme ly rapidly growing field of high-T superconductors.
Author: Frede Blaabjerg
Publisher: MDPI
ISBN: 3038979740
Category : Technology & Engineering
Languages : en
Pages : 476
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Book Description
Power electronics technology is still an emerging technology, and it has found its way into many applications, from renewable energy generation (i.e., wind power and solar power) to electrical vehicles (EVs), biomedical devices, and small appliances, such as laptop chargers. In the near future, electrical energy will be provided and handled by power electronics and consumed through power electronics; this not only will intensify the role of power electronics technology in power conversion processes, but also implies that power systems are undergoing a paradigm shift, from centralized distribution to distributed generation. Today, more than 1000 GW of renewable energy generation sources (photovoltaic (PV) and wind) have been installed, all of which are handled by power electronics technology. The main aim of this book is to highlight and address recent breakthroughs in the range of emerging applications in power electronics and in harmonic and electromagnetic interference (EMI) issues at device and system levels as discussed in robust and reliable power electronics technologies, including fault prognosis and diagnosis technique stability of grid-connected converters and smart control of power electronics in devices, microgrids, and at system levels.
Author: Helmuth Spieler
Publisher: OUP Oxford
ISBN: 0191523658
Category : Technology & Engineering
Languages : en
Pages : 513
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Book Description
Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.
Author:
Publisher:
ISBN:
Category : American literature
Languages : en
Pages : 2460
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Book Description
Author: Matteo Meneghini
Publisher: Springer
ISBN: 3319431994
Category : Technology & Engineering
Languages : en
Pages : 383
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Book Description
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
