Simulation of Sic MESFET Using Synopsys Sentaurus TCAD Tools for High Power and High Frequency Analysis PDF Download
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Author: Chih Yuan Cheng
Publisher:
ISBN:
Category :
Languages : en
Pages : 266
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Author: Chih Yuan Cheng
Publisher:
ISBN:
Category :
Languages : en
Pages : 266
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Author: Puneet Pandey
Publisher:
ISBN:
Category :
Languages : en
Pages : 160
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Author: Malav Shah
Publisher:
ISBN:
Category : Computer-aided engineering
Languages : en
Pages : 108
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Book Description
This paper is concentrated on the development of a complete complementary silicon MESFET technology.
Author: Janet Arikian
Publisher:
ISBN:
Category :
Languages : en
Pages : 84
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Book Description
Silicon Carbide is capable of delivering superior physical characteristics under cavil circumstances because of its inherent broad band gap, high critical breakdown field, high thermal conductivity, and high electron situation drift velocity. Due to its superior quality of high power and low loss, 4H-SiC MESFETs are gradually implemented in designing for High frequency and high power, new energy vehicle and locomotive traction, and so on. In this report, an analytical model is developed to evaluate and analyze many device electrical properties, such as I-V characteristics, transconductance including threshold d voltage, gate-to-source, and gate-to-drain capacitances, and specific-on resistance and cutoff frequency. Meanwhile, it presents more approaches to study how the variation of fabrication parameters such as doping energy level and ion dose density impacts the power and frequency performance for 4H-SiC based MESFETs devices. The model has been analyzed to study I-V characteristics, internal gate capacitances (Gate-to-source and gate-to-drain capacitances), transconductance, specific-on resistance, and cutoff-frequency simulation and analysis. The drain-to-source current reveals its variety along with the change of gate-to-source voltages, which goes up to 70A. Secondly, the ion dose intensity Q significantly affects the internal gate capacitances, which is valuable for evaluating the submicron MESFETS gate model performance under a typical fabrication setup. In addition, transconductance simulation results are obtained by the variation with disparate ion dose densities, which is agreeing well with published theoretical and experimental results. Besides, along with the gradual increase of N-drift layer concentration density, the specific-on resistance has reached to a value of 70ohm. μm2which is very promising property of power device. Lastly, the cutoff and maximum frequencies are 14 GHz and 35 GHz, respectively, with the development of fabrication to implement smaller gate length, if the gate length would be available to narrow down to blow 0.5μm, it has the potential to breakthrough 100 GHz to implement the super high-frequency application, which is also observed from the simulation results.
Author: Mihaela Alexandru
Publisher:
ISBN:
Category :
Languages : en
Pages : 186
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Book Description
Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300oC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300oC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300oC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.
Author: Bhavik Patel
Publisher:
ISBN:
Category :
Languages : en
Pages : 81
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Book Description
In this project, the explanation of analytical modeling of ion implanted silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been described. This model has been designed to determine the drain-source current, threshold voltage, intrinsic parameters such as gate capacitance, transconductance and, drain-source resistance bearing in mind different fabrication parameters such as annealing, ion energy, ion dose, and ion range. The model helps in getting the ion implantation fabrication parameters using the optimization of the effective implanted channel thickness for different ion doses arising to the preferred pitch off voltage for high breakdown voltage and high drain current. A study on gate-to-drain and gate-to-source capacitance, drain-source resistance and transconductance was done to determine the device frequency response.
Author: Bejoy N Pushpakaran
Publisher: World Scientific
ISBN: 9813237848
Category : Technology & Engineering
Languages : en
Pages : 462
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Book Description
The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.Related Link(s)
Author: Dhyaneshwar Murugesan
Publisher:
ISBN:
Category :
Languages : en
Pages : 182
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Author: Vassil Palankovski
Publisher: Springer
ISBN: 9783709171936
Category : Technology & Engineering
Languages : en
Pages : 289
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Book Description
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Author: Chinmay K. Maiti
Publisher: CRC Press
ISBN: 9814745529
Category : Science
Languages : en
Pages : 438
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Book Description
This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.
