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Author: Shengyu Jin
Publisher:
ISBN: 9781303015014
Category :
Languages : en
Pages : 70
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Book Description
This research focuses on the study to explore silicon CMOS on-chip inductors which are suitable for high radio frequency (RF) power applications. Silicon on-chip inductors are typically used in RF circuit building blocks operating with a small signal (RF power much less than 10 dBm) such as LNAs, mixers, input matching circuits for PA. And its equivalent circuit model is developed with linear circuit elements only valid in small signal conditions. However, not much work has been done to investigate nonlinear circuit model of on-chip inductors and to explore its use in RF circuits operating at high RF power conditions (up to 35dBm or more). This work is trying to fill this blank. After extensive analysis of loss mechanism for such silicon on-chip inductor especially spiral inductors, a large signal model for on-chip inductor is presented and performance is predicted under high RF power: self-heating due to high RF power causes quality factor Q degrading noticeably. Then a couple experiments are carried out to verify such self-heating effect due to high RF power. To get more insights in this problem, a simulation approach is developed with help of multi-physics software which can couple such electromagnetic and thermal processes. This simulation approach is verified and calibrated by liquid crystal thermography. Such simulation approach can detect the weakest point of inductor design and evaluate different designs as well. With modern packaging technology, 3-D high Q solenoid on-chip inductors are possible. A careful designed 3-D high Q solenoid on-chip inductor is proposed and is proved its suitability for high power RF applications by simulations.
Author: Shengyu Jin
Publisher:
ISBN: 9781303015014
Category :
Languages : en
Pages : 70
Get Book Here
Book Description
This research focuses on the study to explore silicon CMOS on-chip inductors which are suitable for high radio frequency (RF) power applications. Silicon on-chip inductors are typically used in RF circuit building blocks operating with a small signal (RF power much less than 10 dBm) such as LNAs, mixers, input matching circuits for PA. And its equivalent circuit model is developed with linear circuit elements only valid in small signal conditions. However, not much work has been done to investigate nonlinear circuit model of on-chip inductors and to explore its use in RF circuits operating at high RF power conditions (up to 35dBm or more). This work is trying to fill this blank. After extensive analysis of loss mechanism for such silicon on-chip inductor especially spiral inductors, a large signal model for on-chip inductor is presented and performance is predicted under high RF power: self-heating due to high RF power causes quality factor Q degrading noticeably. Then a couple experiments are carried out to verify such self-heating effect due to high RF power. To get more insights in this problem, a simulation approach is developed with help of multi-physics software which can couple such electromagnetic and thermal processes. This simulation approach is verified and calibrated by liquid crystal thermography. Such simulation approach can detect the weakest point of inductor design and evaluate different designs as well. With modern packaging technology, 3-D high Q solenoid on-chip inductors are possible. A careful designed 3-D high Q solenoid on-chip inductor is proposed and is proved its suitability for high power RF applications by simulations.
Author: Ali M. Niknejad
Publisher: Springer Science & Business Media
ISBN: 0306470381
Category : Technology & Engineering
Languages : en
Pages : 193
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Book Description
The modern wireless communication industry has put great demands on circuit designers for smaller, cheaper transceivers in the gigahertz frequency range. One tool which has assisted designers in satisfying these requirements is the use of on-chip inductiveelements (inductors and transformers) in silicon (Si) radio-frequency (RF) integrated circuits (ICs). These elements allow greatly improved levels of performance in Si monolithic low-noise amplifiers, power amplifiers, up-conversion and down-conversion mixers and local oscillators. Inductors can be used to improve the intermodulation distortion performance and noise figure of small-signal amplifiers and mixers. In addition, the gain of amplifier stages can be enhanced and the realization of low-cost on-chip local oscillators with good phase noise characteristics is made feasible. In order to reap these benefits, it is essential that the IC designer be able to predict and optimize the characteristics of on-chip inductiveelements. Accurate knowledge of inductance values, quality factor (Q) and the influence of ad- cent elements (on-chip proximity effects) and substrate losses is essential. In this book the analysis, modeling and application of on-chip inductive elements is considered. Using analyses based on Maxwells equations, an accurate and efficient technique is developed to model these elements over a wide frequency range. Energy loss to the conductive substrate is modeled through several mechanisms, including electrically induced displacement and conductive c- rents and by magnetically induced eddy currents. These techniques have been compiled in a user-friendly software tool ASITIC (Analysis and Simulation of Inductors and Transformers for Integrated Circuits).
Author: Jaime Aguilera
Publisher: Springer Science & Business Media
ISBN: 1402076762
Category : Technology & Engineering
Languages : en
Pages : 203
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Book Description
Intended for engineers who are starting out in the design of integrated inductors, this book describes the whole design flow, basic selection of the geometry and optimisation of the quality by redesigning the geometry, measurement and de-embedding and characterisation.
Author: Hua Wang
Publisher: Academic Press
ISBN: 0124095224
Category : Technology & Engineering
Languages : en
Pages : 578
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Book Description
RF and mm-Wave Power Generation in Silicon presents the challenges and solutions of designing power amplifiers at RF and mm-Wave frequencies in a silicon-based process technology. It covers practical power amplifier design methodologies, energy- and spectrum-efficient power amplifier design examples in the RF frequency for cellular and wireless connectivity applications, and power amplifier and power generation designs for enabling new communication and sensing applications in the mm-Wave and THz frequencies. With this book you will learn: - Power amplifier design fundamentals and methodologies - Latest advances in silicon-based RF power amplifier architectures and designs and their integration in wireless communication systems - State-of-the-art mm-Wave/THz power amplifier and power generation circuits and systems in silicon - Extensive coverage from fundamentals to advanced design topics, focusing on various layers of abstraction: from device modeling and circuit design strategy to advanced digital and mixed-signal architectures for highly efficient and linear power amplifiers - New architectures for power amplifiers in the cellar and wireless connectivity covering detailed design methodologies and state-of-the-art performances - Detailed design techniques, trade-off analysis and design examples for efficiency enhancement at power back-off and linear amplification for spectrally-efficient non-constant envelope modulations - Extensive coverage of mm-Wave power-generation techniques from the early days of the 60 GHz research to current state-of the-art reconfigurable, digital mm-Wave PA architectures - Detailed analysis of power generation challenges in the higher mm-Wave and THz frequencies and novel technical solutions for a wide range for potential applications, including ultrafast wireless communication to sensing, imaging and spectroscopy - Contributions from the world-class experts from both academia and industry
Author: Genemala Haobijam
Publisher: Springer Science & Business Media
ISBN: 813221515X
Category : Technology & Engineering
Languages : en
Pages : 116
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Book Description
The book addresses the critical challenges faced by the ever-expanding wireless communication market and the increasing frequency of operation due to continuous innovation of high performance integrated passive devices. The challenges like low quality factor, design complexity, manufacturability, processing cost, etc., are studied with examples and specifics. Silicon on-chip inductor was first reported in 1990 by Nguyen and Meyer in a 0.8 μm silicon bipolar complementary metal oxide semiconductor technology (BiCMOS). Since then, there has been an enormous progress in the research on the performance trends, design and optimization, modeling, quality factor enhancement techniques, etc., of spiral inductors and significant results are reported in literature for various applications. This book introduces an efficient method of determining the optimized layout of on chip spiral inductor. The important fundamental tradeoffs of the design like quality factor and area, quality factor and inductance, quality factor and operating frequency, maximum quality factor and the peak frequency is also explored. The authors proposed an algorithm for accurate design and optimization of spiral inductors using a 3D electromagnetic simulator with minimum number of inductor structure simulations and thereby reducing its long computation time. A new multilayer pyramidal symmetric inductor structure is also proposed in this book. Being multilevel, the proposed inductor achieves high inductance to area ratio and hence occupies smaller silicon area.
Author: Ji Chen
Publisher:
ISBN:
Category : Electric inductors
Languages : en
Pages : 109
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Book Description
Passive components are indispensable in the design and development of microchips for high-frequency applications. Inductors in particular are used frequently in radio frequency (RF) IC's such as low-noise amplifiers and oscillators. High performance inductor has become one of the critical components for voltage controlled oscillator (VCO) design, for its quality factor (Q) value directly affects the VCO phase noise. The optimization of inductor layout can improve its performance, but the improvement is limited by selected technology. Inductor performance is bounded by the thin routing metal and small distance from lossy substrate. On the other hand, the in-accurate inductor modeling further limits the optimization process.
Author: Marian K. Kazimierczuk
Publisher: John Wiley & Sons
ISBN: 1118844343
Category : Technology & Engineering
Languages : en
Pages : 685
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Book Description
This second edition of the highly acclaimed RF Power Amplifiers has been thoroughly revised and expanded to reflect the latest challenges associated with power transmitters used in communications systems. With more rigorous treatment of many concepts, the new edition includes a unique combination of class-tested analysis and industry-proven design techniques. Radio frequency (RF) power amplifiers are the fundamental building blocks used in a vast variety of wireless communication circuits, radio and TV broadcasting transmitters, radars, wireless energy transfer, and industrial processes. Through a combination of theory and practice, RF Power Amplifiers, Second Edition provides a solid understanding of the key concepts, the principle of operation, synthesis, analysis, and design of RF power amplifiers. This extensive update boasts: up to date end of chapter summaries; review questions and problems; an expansion on key concepts; new examples related to real-world applications illustrating key concepts and brand new chapters covering ‘hot topics’ such as RF LC oscillators and dynamic power supplies. Carefully edited for superior readability, this work remains an essential reference for research & development staff and design engineers. Senior level undergraduate and graduate electrical engineering students will also find it an invaluable resource with its practical examples & summaries, review questions and end of chapter problems. Key features: • A fully revised solutions manual is now hosted on a companion website alongside new simulations. • Extended treatment of a broad range of topologies of RF power amplifiers. • In-depth treatment of state-of-the art of modern transmitters and a new chapter on oscillators. • Includes problem-solving methodology, step-by-step derivations and closed-form design equations with illustrations.
Author: Paulo Augusto Dal Fabbro
Publisher: Springer Science & Business Media
ISBN: 9048193613
Category : Technology & Engineering
Languages : en
Pages : 171
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Book Description
Advances in electronics have pushed mankind to create devices, ranging from - credible gadgets to medical equipment to spacecraft instruments. More than that, modern society is getting used to—if not dependent on—the comfort, solutions, and astonishing amount of information brought by these devices. One ?eld that has continuously bene?tted from those advances is the radio frequency integrated c- cuit (RFIC) design, which in its turn has promoted countless bene?ts to the mankind as a payback. Wireless communications is one prominent example of what the - vances in electronics have enabled and their consequences to our daily life. How could anyone back in the eighties think of the possibilities opened by the wireless local area networks (WLANs) that can be found today in a host of places, such as public libraries, coffee shops, trains, to name just a few? How can a youngster, who lives this true WLAN experience nowadays, imagine a world without it? This book dealswith the design oflinearCMOS RF PowerAmpli?ers(PAs). The RF PA is a very important part of the RF transceiver, the device that enables wireless communications. Two important aspects that are key to keep the advances in RF PA design at an accelerate pace are treated: ef?ciency enhancement and frequen- tunable capability. For this purpose, the design of two different integrated circuits realizedina0. 11μmtechnologyispresented,eachoneaddressingadifferentaspect. With respect to ef?ciency enhancement, the design of a dynamic supply RF power ampli?er is treated, making up the material of Chaps. 2 to 4.
Author: Richard D. Lutz
Publisher:
ISBN:
Category : Electric inductors
Languages : en
Pages : 310
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Book Description
Spiral inductors are a key component of mixed-signal and analog integrated circuits (IC's). Such circuits are often fabricated using silicon-based technology, owing to the inherent low-cost and high volume production aspects. However, semiconducting substrate materials such as silicon can have adverse effects on spiral inductor performance due to the lossy nature of the material. Since the operating requirements of many high performance IC's demand reactive components that have high Quality Factor's (Q's), and are thus low loss devices, the need for accurate modeling of such structures over lossy substrate media is key to successful circuit design. The Q's of commonly available off-chip inductors are in the range of 50- 100 for frequencies ranging up to a few gigahertz. Since off-chip inductors must be connected through package pins, solder bumps, etc., which all contribute additional loss and thus lower the apparent Q of an external device, the typical on-chip Q requirement for a given RFIC design is generally lower than that for an off-chip spiral solution. However, a spiral inductor that was designed and fabricated originally in a low loss technology such as thin-film alumina may have substantially worse performance in regard to Q if it is used in a silicon-based technology, owing to the conductive substrate. For this reason, it is imperative that semiconducting substrate effects be accurately accounted for by any modeling effort for monolithic spirals in RFICs. This thesis presents a complete modeling solution for both single and multi-level spiral inductors over lossy silicon substrates, along with design considerations and methods for mitigation of the undesirable performance effects of semiconducting substrates. The modeling solution is based on Spectral Domain Approach (SDA) solutions for frequency dependent complex capacitive (i.e. both capacitance and conductance) parasitic elements combined with a quasi-magnetostatic field solution for calculation of the frequency dependent complex inductive (i.e. both inductance and resistance) terms. The effects of geometry and process variations are considered as well as the incorporation of Patterned Ground Shields (PGS) for the purpose of Q enhancement. Proposals for future extensions of this work are discussed in the concluding chapter.
Author: Terry C. Edwards
Publisher: John Wiley & Sons
ISBN: 1118936183
Category : Technology & Engineering
Languages : en
Pages : 688
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Book Description
Building on the success of the previous three editions, Foundations for Microstrip Circuit Design offers extensive new, updated and revised material based upon the latest research. Strongly design-oriented, this fourth edition provides the reader with a fundamental understanding of this fast expanding field making it a definitive source for professional engineers and researchers and an indispensable reference for senior students in electronic engineering. Topics new to this edition: microwave substrates, multilayer transmission line structures, modern EM tools and techniques, microstrip and planar transmision line design, transmission line theory, substrates for planar transmission lines, Vias, wirebonds, 3D integrated interposer structures, computer-aided design, microstrip and power-dependent effects, circuit models, microwave network analysis, microstrip passive elements, and slotline design fundamentals.
