Silicon Materials Task of the Low Cost Solar Array Project (phase III) PDF Download
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Author: Westinghouse Electric Corporation. Research & Development Center
Publisher:
ISBN:
Category :
Languages : en
Pages : 68
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Author: Westinghouse Electric Corporation. Research & Development Center
Publisher:
ISBN:
Category :
Languages : en
Pages : 68
Get Book Here
Book Description
Author: R. H. Hopkins
Publisher:
ISBN:
Category : Silicon
Languages : en
Pages : 212
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Author: R. H. Hopkins
Publisher:
ISBN:
Category : Silicon
Languages : en
Pages :
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Author:
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ISBN:
Category :
Languages : en
Pages :
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Book Description
The object of this phase of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the properties of silicon and on the performance of terrestrial silicon solar cells. The study encompassed topics including thermochemical (gettering) treatments, base doping concentration, base doping type (n vs. p), grain boundary-impurity interaction, non-uniformity of impurity distribution, long term effects of impurities, as well as synergic and complexing phenomena. The program approach consists in: (1) the growth of doubly and multiply-doped silicon single crystals containing a baseline boron or phosphorus dopant and specific impurities which produce deep levels in the forbidden band gap; (2) assessment of these crystals by chemical, microstructural, electrical and solar cell tests; (3) correlation of the impurity type and concentration with crystal quality and device performance; and (4) delineation of the role of impurities and processing on subsequent silicon solar cell performance. The overall results reported are based on the assessment of nearly 200 silicon ingots. (WHK).
Author: Westinghouse Electric Corporation. Research & Development Center
Publisher:
ISBN:
Category :
Languages : en
Pages : 52
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Category : Dendritic crystals
Languages : en
Pages :
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Author: R. H. Hopkins
Publisher:
ISBN:
Category : Silicon
Languages : en
Pages : 72
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl3 gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.
Author:
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Category :
Languages : en
Pages :
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This is the first quarterly report for Phase III of a program to define the effects of impurities, various thermochemical processes and any impurity-process interactions on the performance of terrestrial silicon solar cells. The projected Phase III effort falls in five areas: (1) cell processing studies, (2) completion of the data base and impurity-performance modeling for n-base cells, (3) extension of p-base studies to include contaminants likely to be introduced during silicon production, refining or crystal growth, (4) anisotropy effects, and (5) a preliminary study of the permanence of impurity effects in silicon solar cells. The dominant activity during this quarter was the growth of ingots. Fourteen Czochralski ingots were produced including several base line ingots, p-base ingots for processing studies and large diameter ingots for the anisotropy investigation. Data on cellular breakdown in four of the heavily doped ingots was consistent with prior predictions. Besides the crystal growth a detailed deep level spectroscopic analysis of the electrical activity of Ti in silicon was performed and modeling studies of impurity behavior were extended.
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Category : Dendritic crystals
Languages : en
Pages : 59
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