Silicon Carbide Micro Electromechanical Systems for Harsh Environments PDF Download
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Author: Rebecca Cheung
Publisher: Imperial College Press
ISBN: 1860949096
Category : Technology & Engineering
Languages : en
Pages : 193
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Book Description
This unique book describes the science and technology of silicon carbide (SiC) microelectromechanical systems (MEMS), from the creation of SiC material to the formation of final system, through various expert contributions by several leading key figures in the field. The book contains high-quality up-to-date scientific information concerning SiC MEMS for harsh environments summarized concisely for students, academics, engineers and researchers in the field of SiC MEMS. This is the only book that addresses in a comprehensive manner the main advantages of SiC as a MEMS material for applications in high temperature and harsh environments, as well as approaches to the relevant technologies, with a view progressing towards the final product. Sample Chapter(s). Chapter 1: Introduction to Silicon Carbide (SIC) Microelectromechanical Systems (MEMS) (800 KB). Contents: Introduction to Silicon Carbide (SiC) Microelectromechanical Systems (MEMS) (R Cheung); Deposition Techniques for SiC MEMS (C A Zorman et al.); Review of Issues Pertaining to the Development of Contacts to Silicon Carbide: 1996OCo2002 (L M Porter & F A Mohammad); Dry Etching of SiC (S J Pearton); Design, Performance and Applications of SiC MEMS (S Zappe). Readership: Academic researchers in MEMS and industrial engineers engaged in SiC MEMS research."
Author: Rebecca Cheung
Publisher: Imperial College Press
ISBN: 1860949096
Category : Technology & Engineering
Languages : en
Pages : 193
Get Book Here
Book Description
This unique book describes the science and technology of silicon carbide (SiC) microelectromechanical systems (MEMS), from the creation of SiC material to the formation of final system, through various expert contributions by several leading key figures in the field. The book contains high-quality up-to-date scientific information concerning SiC MEMS for harsh environments summarized concisely for students, academics, engineers and researchers in the field of SiC MEMS. This is the only book that addresses in a comprehensive manner the main advantages of SiC as a MEMS material for applications in high temperature and harsh environments, as well as approaches to the relevant technologies, with a view progressing towards the final product. Sample Chapter(s). Chapter 1: Introduction to Silicon Carbide (SIC) Microelectromechanical Systems (MEMS) (800 KB). Contents: Introduction to Silicon Carbide (SiC) Microelectromechanical Systems (MEMS) (R Cheung); Deposition Techniques for SiC MEMS (C A Zorman et al.); Review of Issues Pertaining to the Development of Contacts to Silicon Carbide: 1996OCo2002 (L M Porter & F A Mohammad); Dry Etching of SiC (S J Pearton); Design, Performance and Applications of SiC MEMS (S Zappe). Readership: Academic researchers in MEMS and industrial engineers engaged in SiC MEMS research."
Author: Muthu Wijesundara
Publisher: Springer Science & Business Media
ISBN: 1441971211
Category : Technology & Engineering
Languages : en
Pages : 247
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Book Description
Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods towards system level integration of components and key challenges are evaluated and discussed based on the current state of SiC materials processing and device technology. Issues such as temperature mismatch, process compatibility and temperature stability of individual components and how these issues manifest when building the system receive thorough investigation. The material covered not only reviews the state-of-the-art MEMS devices, provides a framework for the joining of electronics and MEMS along with packaging into usable harsh-environment-ready sensor modules.
Author: Andrew Ryan Atwell
Publisher:
ISBN:
Category :
Languages : en
Pages : 372
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Book Description
Author: Rebecca Cheung
Publisher: World Scientific
ISBN: 1860946240
Category : Technology & Engineering
Languages : en
Pages : 193
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Book Description
This unique book describes the science and technology of silicon carbide (SiC) microelectromechanical systems (MEMS), from the creation of SiC material to the formation of final system, through various expert contributions by several leading key figures in the field. The book contains high-quality up-to-date scientific information concerning SiC MEMS for harsh environments summarized concisely for students, academics, engineers and researchers in the field of SiC MEMS.This is the only book that addresses in a comprehensive manner the main advantages of SiC as a MEMS material for applications in high temperature and harsh environments, as well as approaches to the relevant technologies, with a view progressing towards the final product.
Author: Mohamed Gad-el-Hak
Publisher: CRC Press
ISBN: 1420036556
Category : Technology & Engineering
Languages : en
Pages : 576
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Book Description
As our knowledge of microelectromechanical systems (MEMS) continues to grow, so does The MEMS Handbook. The field has changed so much that this Second Edition is now available in three volumes. Individually, each volume provides focused, authoritative treatment of specific areas of interest. Together, they comprise the most comprehensive collection
Author: Wolfgang J. Choyke
Publisher: Springer Science & Business Media
ISBN: 3642188702
Category : Technology & Engineering
Languages : en
Pages : 911
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Book Description
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Author: Stephen Saddow
Publisher: BoD – Books on Demand
ISBN: 9535121685
Category : Technology & Engineering
Languages : en
Pages : 260
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Book Description
Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.
Author: Toan Dinh
Publisher: Springer
ISBN: 9811325715
Category : Technology & Engineering
Languages : en
Pages : 122
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Book Description
This book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the thermoelectrical sensing theories in different SiC morphologies and polytypes. Further, it reviews the recent advances in the characterization of the thermoelectrical effect in SiC at high temperatures. Discussing several desirable features of thermoelectrical SiC sensors and recent developments in these sensors, the book provides useful guidance on developing high sensitivity and linearity, fast-response SiC sensing devices based on thermoelectrical effects.
Author: Stephen E. Saddow
Publisher: Elsevier
ISBN: 0123859077
Category : Technology & Engineering
Languages : en
Pages : 496
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Book Description
Silicon Carbide (SiC) is a wide-band-gap semiconductor biocompatible material that has the potential to advance advanced biomedical applications. SiC devices offer higher power densities and lower energy losses, enabling lighter, more compact and higher efficiency products for biocompatible and long-term in vivo applications ranging from heart stent coatings and bone implant scaffolds to neurological implants and sensors. The main problem facing the medical community today is the lack of biocompatible materials that are also capable of electronic operation. Such devices are currently implemented using silicon technology, which either has to be hermetically sealed so it cannot interact with the body or the material is only stable in vivo for short periods of time. For long term use (permanent implanted devices such as glucose sensors, brain-machine-interface devices, smart bone and organ implants) a more robust material that the body does not recognize and reject as a foreign (i.e., not organic) material is needed. Silicon Carbide has been proven to be just such a material and will open up a whole new host of fields by allowing the development of advanced biomedical devices never before possible for long-term use in vivo. This book not only provides the materials and biomedical engineering communities with a seminal reference book on SiC that they can use to further develop the technology, it also provides a technology resource for medical doctors and practitioners who are hungry to identify and implement advanced engineering solutions to their everyday medical problems that currently lack long term, cost effective solutions. - Discusses Silicon Carbide biomedical materials and technology in terms of their properties, processing, characterization, and application, in one book, from leading professionals and scientists - Critical assesses existing literature, patents and FDA approvals for clinical trials, enabling the rapid assimilation of important data from the current disparate sources and promoting the transition from technology research and development to clinical trials - Explores long-term use and applications in vivo in devices and applications with advanced sensing and semiconducting properties, pointing to new product devekipment particularly within brain trauma, bone implants, sub-cutaneous sensors and advanced kidney dialysis devices
Author: Hoang-Phuong Phan
Publisher: Springer
ISBN: 3319555448
Category : Technology & Engineering
Languages : en
Pages : 156
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Book Description
This book addresses the piezoresistance in p-type 3C-SiC, which it investigates using experimental characterization and theoretical analysis. The gauge factor, the piezoresistive coefficients in two-terminal and four-terminal resistors, the comparison between single crystalline and nanocrystalline SiC, along with the temperature dependence of the piezoresistive effect in p-type 3C-SiC are also discussed. Silicon carbide (SiC) is an excellent material for electronic devices operating at high temperatures, thanks to its large energy band gap, superior mechanical properties and extreme chemical inertness. Among the numerous polytypes of SiC, the cubic single crystal, which is also well known as 3C-SiC, is the most promising platform for microelectromechanical (MEMS) applications, as it can be epitaxially grown on an Si substrate with diameters of up to several hundred millimeters. This feature makes 3C-SiC compatible with the conventional Si-based micro/nano processing and also cuts down the cost of SiC wafers. The investigation into the piezoresistive effect in 3C-SiC is of significant interest for the development of mechanical transducers such as pressure sensors and strain sensors used for controlling combustion and deep well drilling. Although a number of studies have focused on the piezoresistive effect in n-type 3C-SiC, 4H-SiC and 6H-SiC, comparatively little attention has been paid to piezoresistance in p-type 3C-SiC. In addition, the book investigates the piezoresistive effect of top-down fabricated SiC nanowires, revealing a high degree of sensitivity in nanowires employing an innovative nano strain-amplifier. The large gauge factors of the p-type 3C-SiC at both room temperature and high temperatures found here indicate that this polytype could be suitable for the development of mechanical sensing devices operating in harsh environments with high temperatures.
