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Author: Peter M. Gammon
Publisher: Trans Tech Publications Ltd
ISBN: 3035733325
Category : Technology & Engineering
Languages : en
Pages : 916
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Book Description
12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
Author: Peter M. Gammon
Publisher: Trans Tech Publications Ltd
ISBN: 3035733325
Category : Technology & Engineering
Languages : en
Pages : 916
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Book Description
12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
Author: Peter M. Gammon
Publisher:
ISBN: 9781523127658
Category : Silicon carbide
Languages : en
Pages : 883
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Book Description
Author: Peter M. Gammon
Publisher:
ISBN: 9783035713329
Category : Silicon carbide
Languages : en
Pages : 0
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Book Description
This volume contains selected papers from the 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), held in Birmingham, UK, in September 2018. Researchers discussed the latest progress in the field of silicon carbide semiconductors, including their development and production, and their application in the power electronic devices. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices, including diodes, power MOSFETs, JFETs and IGBTs; reliability, circuits and applications. The contributors are academics and industrialists from around the world. Silicon Carbide, Silicon Carbide Polytypes, Defects, Dislocation, Silicon Oxide Interface, Epitaxial Growth, Characterization, Processing, Wide Bandgap Semiconductor, Bulk Growth, Power Electronics, Semiconductor Devices Materials Science, Manufacturing, Electronics.
Author: Min Lu
Publisher: Trans Tech Publications Ltd
ISBN: 3035733856
Category : Technology & Engineering
Languages : en
Pages : 226
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Book Description
Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) Selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China
Author: Min Lu (Engineer)
Publisher:
ISBN: 9783035713855
Category : Semiconductors
Languages : en
Pages : 0
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Book Description
The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) was held on July 9-12, 2018 in Beijing, China. This collection compiled by results of this conference and reflect new developments in the areas of wide bandgap semiconductors (SiC, GaN, Ga2O3, and etc.) and their device fabrication, including advances in the bulk and epitaxial growth, material structure and property, photoelectron and electronic device. We hope that this edition will be interesting and useful for many specialists from the area of research and designing of semiconductor materials and semiconductor devices. Semiconductors, Silicon Carbide, Graphene, Crystal Growth, Epitaxial Growth, Substrate, Thin Films, Vapor Deposition, High-Temperature Thermal Oxidation, SiC MOSFET Structure, Microelectronics Devices Materials Science, Electronics, Nanoscience.
Author: Roland Madar
Publisher: Trans Tech Publications Ltd
ISBN: 3035706298
Category : Technology & Engineering
Languages : en
Pages : 1548
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Book Description
Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. Volume is indexed by Thomson Reuters CPCI-S (WoS).
Author: Hiroshi Yano
Publisher: Trans Tech Publications Ltd
ISBN: 3035735794
Category : Science
Languages : en
Pages : 1196
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Book Description
Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019) Selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan
Author: Calvin H. Carter
Publisher:
ISBN:
Category :
Languages : en
Pages : 828
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Book Description
Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99), held October 10-15, 1999, at Research Triangle Park, North Carolina. The growth of this biennial international conference to over 650 participants from 25 countries attests to the rapidly increasing interest in large bandgap semiconductors in both academia and industry. These volumes contain 401 papers, 19 of which were invited. The principal topics organized as chapters are: 1) SiC bulk growth, 2) SiC epitaxy and thin film growth, 3) physical properties of SiC (structure, surfaces and interfaces, optical and electrical properties, and magnetic resonance), 4) processing of SiC, 5) SiC devices, 6) growth of III-Nitrides and related materials, 6) physical properties of III-Nitrides, and 8) III-Nitrides: processing and devices.
Author: Michael G. Spencer
Publisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 768
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Book Description
USA companies working in this area include Westinghouse. This material is being investigated primarily in the USA, Japan and Russia alongside that into wide-gap compounds which feature similar characteristics. Applications include high temperature ultra-violet lasers, photodiodes, photodetectors, blue LEDs, high power microwave applications in radar and transmitter devices Special sale to delegates 200 @ 35 Previous volumes in series published by Springer Leading workers in field include Pavlidis (MIT) and Choyke (Pittsburgh, Dept Phys) Feng author is also presenting paper Research in this area is expanding
Author: Gerhard Pensl
Publisher: Trans Tech Publications Ltd
ISBN: 3035705259
Category : Technology & Engineering
Languages : en
Pages : 1606
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Book Description
Volume is indexed by Thomson Reuters CPCI-S (WoS). This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties.
