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Author:
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 486
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Book Description
Author:
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 486
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Book Description
Author: R.J. Malik
Publisher: Elsevier
ISBN: 0444596356
Category : Technology & Engineering
Languages : en
Pages : 740
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Book Description
The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.
Author: REES
Publisher: Birkhäuser
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 384
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Book Description
The study of deep levels in semiconductors has seen considerable growth in recent years. Many new techniques have become available for investigating both the electronic properties of deep levels and the chemical nature of the defects from which they arise. This increasing interest has been stimulated by the importance of the subject to device technology, in particular those microwave and opto-electronic devices made from GaAs, InP and their alloys. While previous conferences have covered specialist areas of deep level technology, the meeting described here was arranged to draw together workers from these separate fields of study. The following papers reflect the breadth of interests represented at the conference. For the sake of uniformity we have chosen the English alternative where an American expression has been used. We have also sought to improve grammar, sometimes without the approval of the author in the interests of rapid publication. The Editor wishes to thank the referees for their ready advice at all stages, Paul Jay who helped with many of the editorial duties and Muriel Howes and Lorraine Jones for rapid and accurate typing.
Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
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Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author: M. Nowogrodzki
Publisher: William Andrew
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 252
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Author: Takahiko Misugi
Publisher: Springer Science & Business Media
ISBN: 1475797745
Category : Science
Languages : en
Pages : 311
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Book Description
In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoked tremendous competition in the race to develop such technology. A technology review shows that Japanese research institutes and companies have taken the lead in the development of these devices, and some integrated circuits have already been applied to supercomputers in Japan. The activities of Japanese research institutes and companies in the III-V and superconducting device fields have been superior for three reasons. First, bulk crystal growth, epitaxial growth, process, and design technology were developed at the same time.
Author: E.I. Givargizov
Publisher: Springer Science & Business Media
ISBN: 146153268X
Category : Science
Languages : en
Pages : 208
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Book Description
This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. In choosing papers, the Program Committee of the conference gave priority to studies in rapidly emerging areas of the growth and preparation of crystalS and crystalline films. The qualifications of the authors were also consid ered. This ensured that the material was of a high standard and that the problems discussed covered a wide range. These are the same criteria that, we hope, are typical of the volumes of this series. The articles of the present volume are divided into four sections: I. Processes on the growth surface. II. Molecular-beam epitaxy. III. Growth of crystals and films from solutions and fluxes. N. Growth of crystals from the melt. Following tradition, the series opens with three theoretical articles. These examine problems applicable to various crystallization media: instability of the crystallization front (for a more general case than before and for a comparatively complicated system, a solution), adsorption and migration of atoms and molecules (the analysis is made on a quantum-chemical level), and the kinetics of step and dislocation growth in the presence of surface anisotropy as well as impurity adsorption (several earlier known methods are summarized). The next two articles are experimental and methodical.
Author: G. Bastard
Publisher: Elsevier
ISBN: 0444596720
Category : Science
Languages : en
Pages : 554
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Book Description
This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
Author: K. N. Bhat
Publisher: Alpha Science Int'l Ltd.
ISBN: 9788173195679
Category : Science
Languages : en
Pages : 1310
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Book Description
Contributed papers of the workshop held at IIT, Madras, in 2003.
Author:
Publisher:
ISBN:
Category : Patents
Languages : en
Pages : 896
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Book Description
