Selected Topics in Group IV and II-VI Semiconductors PDF Download
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Author: E.H.C. Parker
Publisher: Newnes
ISBN: 0444596437
Category : Technology & Engineering
Languages : en
Pages : 465
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Book Description
This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field. Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.
Author: E.H.C. Parker
Publisher: Newnes
ISBN: 0444596437
Category : Technology & Engineering
Languages : en
Pages : 465
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Book Description
This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field. Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.
Author: D. Bimberg
Publisher: Springer Science & Business Media
ISBN: 9783540150725
Category : Science
Languages : en
Pages : 408
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Book Description
Author: Sadao Adachi
Publisher: John Wiley & Sons
ISBN: 0470090332
Category : Technology & Engineering
Languages : en
Pages : 406
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Book Description
Almost all the semiconductors of practical interest are the group-IV, III-V and II-VI semiconductors and the range of technical applications of such semiconductors is extremely wide. The purpose of this book is twofold: * to discuss the key properties of the group-IV, III-V and II-VI semiconductors * to systemize these properties from a solid-state physics aspect The majority of the text is devoted to the description of the lattice structural, thermal, elastic, lattice dynamic, electronic energy-band structural, optical and carrier transport properties of these semiconductors. Some corrective effects and related properties, such as piezoelectric, elastooptic and electrooptic properties, are also discussed. The book contains convenient tables summarizing the various material parameters and the definitions of important semiconductor properties. In addition, graphs are included in order to make the information more quantitative and intuitive. The book is intended not only for semiconductor device engineers, but also physicists and physical chemists, and particularly students specializing in the fields of semiconductor synthesis, crystal growth, semiconductor device physics and technology.
Author: Erich Kasper
Publisher: North-Holland
ISBN: 9780444824110
Category : Technology & Engineering
Languages : en
Pages : 770
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Book Description
This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field.Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.
Author: O. Madelung
Publisher: Springer Science & Business Media
ISBN: 9783540166092
Category : Science
Languages : en
Pages : 478
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Book Description
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Publisher:
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Category : Aeronautics
Languages : en
Pages : 702
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Book Description
Author: F. Petroff
Publisher: Elsevier
ISBN: 9780444205032
Category : Science
Languages : en
Pages : 560
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Book Description
The Symposium on Magnetic Ultrathin Films, Multilayers and Surfaces, hosted by the European Materials Research Society, was held at the Palais de la Musique et des Congré in Strasbourg, France on June 4-7, 1996. Its central theme was the relationship of magnetic properties and device performance to structure at the nano and micrometer length scale. Research on the magnetism of surfaces, ultrathin films and multilayers has increased dramatically during recent years. This development was triggered by the discovery of coupling between ferromagnetic layers across nonmagnetic spacer layers and of the giant magnetoresistance effect in systems of reduced dimension using various micro and nanofabrication techniques has become a subject of special interest. It is certainly the promising application potential of these effects in new magnetic recording device geometries which causes this intensive research, which is done both by companies and at universities and research institutes. A selection of invited and contributed papers presented at the Symposium and accepted for publication is contained in this volume. The contents of these proceedings are organized into seven sections. A. Nanowires, Nanoparticles, Nanostructuring B. Ultrathin Films and Surfaces, Characterization C. Giant Magnetoresistance D. Coupling, Tunneling E. Growth, Structure, Magnetism F. Growth, Structure, Magnetoresistance G. Coupling, Magnetic processes, Magneto-optics. The first four sections contain invited and oral contributed papers in the listed research domains, while the last three sections contain the contributions presented during three large poster sessions.
Author: H. Münder
Publisher: Newnes
ISBN: 0444596348
Category : Science
Languages : en
Pages : 344
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Book Description
These proceedings represent the most recent progress in the field of porous silicon. Several papers present results in which the influence of the formation parameters on the structural and optical properties has been investigated. Further topics dealt with include: the influence of light during the formation process on the photoluminescence behaviour; fundamental mechanism of the photoluminescence; the electroluminescence of porous silicon; applications based on porous silicon; charge carrier transport.
Author: Otfried Madelung
Publisher: Springer Science & Business Media
ISBN: 3642976751
Category : Science
Languages : en
Pages : 327
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Book Description
The frequent use of well known critical data handbooks like Beilstein, Gmelin and Landolt-Bomstein is impeded by the fact that merely larger libraries - often far away from the scientist's working place - can afford such precious collections. To satisfy an urgent need of many scientists working in the field of semiconductor physics for having at their working place a comprehensive, high quality, but cheap collection of at least the basic data of their field of interest this volume contains the most important data of semiconductors. All data were compiled from information on semiconductors presented on more than 6000 pages in various volumes of the New Series of Landolt-Bomstein. We hope to meet the needs of the community of semiconductor physicists with this volume, forming a bridge between the laboratory and additional information sources in the libraries. The Editor Marburg, January 1996 Table of contents A Introduction 1 General remarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 The corresponding Landolt-Bomstein volumes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 3 Physical quantities tabulated in this volume . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 B Physical data Elements of the IVth group and IV-IV compounds 1. 1 Diamond (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1. 2 Silicon (Si) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1. 3 Germanium (Ge) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 1. 4 Grey tin (a-Sn) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 1. 5 Silicon carbide (SiC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 1. 6 Silicon germanium alloys (SixGel_x) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 2 III-V compounds 2. 1 Boron nitride (BN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 2. 2 Boron phosphide (BP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 2. 3 Boron arsenide (BAs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 2. 4 Aluminium nitride (AIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 2. 5 Aluminium phosphide (AlP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 2. 6 Aluminium arsenide (AlAs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Author: E. Fogarassy
Publisher: Newnes
ISBN: 0444596321
Category : Technology & Engineering
Languages : en
Pages : 943
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Book Description
This book contains the proceedings of the largest conference ever held on this subject. The strong interest in this field is largely due to the fact that both fundamental aspects of laser-surface interaction as well as applied techniques for thin film generation and patterning were treated in detail by experts from around the world.
