Scanning Tunneling Microscopy Studies of Growth of Silicon and Germanium on Silicon(100) PDF Download
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Author: Fang Wu
Publisher:
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Category :
Languages : en
Pages : 540
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Author: Fang Wu
Publisher:
ISBN:
Category :
Languages : en
Pages : 540
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Author: Jerome S. Hubacek
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Category :
Languages : en
Pages :
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The Si(100) 2 x 1 surface, a technologically important surface in microelectronics and silicon molecular beam epitaxy (MBE), has been studied with the scanning tunneling microscope (STM) to attempt to clear up the controversy that surrounds previous studies of this surface. To this end, an ultra-high vacuum (UHV) STM/surface science system has been designed and constructed to study semiconductor surfaces. Clean Si(100) 2 x 1 surfaces have been prepared and imaged with the STM. Atomic resolution images probing both the filled states and empty states indicate that the surface consists of statically buckled dimer rows. With electronic device dimensions shrinking to smaller and smaller sizes, the Si-SiO$sb2$ interface is becoming increasingly important and, although it is the most popular interface used in the microelectronics industry, little is known about the initial stages of oxidation of the Si(100) surface. Scanning tunneling microscopy has been employed to examine Si(100) 2 x 1 surfaces exposed to molecular oxygen in UHV. Ordered rows of bright and dark spots, rotated 45$spcirc$ from the silicon dimer rows, appear in the STM images, suggesting that the Si(100)-SiO$sb2$ interface may be explained with a $beta$-cristobalite(100) structure rotated by 45$spcirc$ on the Si(100) surface.
Author: Christopher Andrew Pearson
Publisher:
ISBN:
Category :
Languages : en
Pages : 172
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Author: Barbara Golen
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Category :
Languages : en
Pages :
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Author: Joseph A. Stroscio
Publisher: Academic Press
ISBN: 1483292878
Category : Science
Languages : en
Pages : 481
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Scanning tunneling microscopy (STM) and its extensions have become revolutionary tools in the fields of physics, materials science, chemistry, and biology. These new microscopies have evolved from their beginnings asresearch aids to their current use as commercial tools in the laboratory and on the factory floor. New wonders continue to unfold as STM delivers atomic scale imaging and electrical characterization of the newly emerging nanometer world. This volume in the METHODS OF EXPERIMENTAL PHYSICS Series describes the basics of scanning tunneling microscopy, provides a fundamental theoretical understanding of the technique and a thorough description of the instrumentation, and examines numerous examples and applications. Written by the pioneers of the field, this volume is an essential handbook for researchers and users of STM, as well as a valuable resource for libraries.
Author: Dimitri B. Skliar
Publisher: ProQuest
ISBN: 9780549924609
Category : Scanning tunneling microscopy
Languages : en
Pages :
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The understanding of the chemistry of silicon surfaces has been one of the major contributors in development and improvement of silicon based microelectronic devices in the past several decades. Progressively, the dimensions of devices have reduced by several orders of magnitude, presently at the length scale of few tens of nanometers, and are expected to decrease in size even more. For chemistry based film growth methods such as chemical vapor deposition (CVD) or atomic layer deposition (ALD), control of film structure and composition in this spatial regime requires a very detailed nanoscopic understanding of silicon surface chemistry. A combined experimental and theoretical approach, utilizing ultra high vacuum scanning tunneling microscopy (UHV-STM) and density functional theory (DFT), to understanding the surface chemistry of Si(100) is illustrated in the context of ALD development for high dielectric constant metal oxides. As a first possible route to controllably deposit monolayer thick metal layer, the reaction of the metal-organic molecule with bare silicon surface is considered. The interaction of the protonated b-diketonate ligand, 2,2,6,6-tetramethyl-3,5-heptanedione (dpmH), which is a byproduct of the strontium metal-organic precursor vaporization, with Si(100)-2x1 surface is investigated. Two aspects of the molecule's interactions were addressed: the adsorption at room temperature as well as its thermal decomposition. By combination of the experiments with DFT calculations of adsorbate geometry, STM image simulations, and reaction pathways it was possible to propose unique binding configurations that match the experimentally observed adsorption features. Theoretical analysis of multiple competing reaction pathways showed that hydroxyl dissociation via a 1,7 H-shift mechanism is the dominant adsorption pathway. Several other pathways including [2+4] addition, [2+2] C=O intra-dimer addition, [2+2] C=O intra-dimer addition with OH dissociation on an adjacent dimer, [2+2] C=C intra-dimer addition, and "ene" addition are found to be barrierless with respect to the entrance channel, and have small barriers relative to a hypothesized adsorption precursor intermediate. Pathways involving 1,3 and 1,2 intra-molecular H-shifts are found to be highly activated and are expected to be inaccessible at room temperature. Several state inter-conversions are found to be unlikely as well. These results provide insight to the competitive adsorption pathways for multifunctional molecules on silicon. Investigations of thermally induced decomposition of adsorbed dpmH molecules showed that there are no significant products of desorption of carbon containing fragments of the molecule, i.e. most of the carbon atoms incorporate into the silicon surface causing it to reconstruct to a c(4x4) phase at exposures below ~ 0.15 L. At higher exposures formation of SiC islands is observed. These findings demonstrate that schemes to deposit materials from organometallic compounds containing b-diketone ligands onto clean Si(100)-2x1 surface cannot result in an ordered interfacial structure as carbon incorporation into the substrate is inevitable. An alternative strategy for depositing metal template layer is proposed, where the initial reacting surface will be terminated by water at room temperature. The stability of surface hydroxyl groups and mechanisms of their decomposition in 300-600K temperature range are analyzed. It is found that surface oxidation does not follow first order kinetics with respect to the hydroxyl groups. DFT calculations of oxygen insertion pathways point towards a catalytic effect of the dangling bonds and suggest that in the 500-550K range the insertion events should occur predominantly next to unoccupied surface silicon sites. A model is proposed, where diffusing dangling bonds act as moving catalysts for hydroxyl group decomposition. Kinetic Monte Carlo (kMC) simulations are used to compare the results of this model with experimental data. A strategy to increase hydroxyl group stability is demonstrated where the initial concentration of surface dangling bonds is decreased by water termination at 130K.
Author:
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Category :
Languages : en
Pages : 11
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In this final report, we discuss our recent results with the structure of metals on semiconductor surfaces. In particular, we focus our study on the use of surfactants for the epitaxial growth of germanium on silicon. A surfactant, such as tellurium, reduces the interfacial energy between the Si and Ge, as well as their surface free energies to change the growth mode to layer by layer, which is necessary to epitaxial growth. In addition to this summary of technical progress, we summarize some of the important events that took place in the Ginzton Lab during the period covered by this grant. These include the introduction of the force microscope and the transfer of this technology to industrial firms in such a way that instrument's based on the designs developed under this grant are now available in commercial form. Finally, we point out that our work on microfabrication of silicon cantilevers can be extended to the construction of parallel arrays where each cantilever is operated independently. Such an array will enable a large increase in speed for the new form of lithography based on patterning silicon with the E-field on the scanning tip. Such patterning can produce lines with widths less than 0.1 micrometer. This range, beyond the limits of optical lithography, is of crucial importance to the future of silicon microcircuits.
Author: Marc Fouchier
Publisher:
ISBN:
Category : Germanium
Languages : en
Pages : 362
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Author: Marian Enachescu
Publisher:
ISBN:
Category :
Languages : en
Pages : 188
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Author: Hans-Joachim Güntherodt
Publisher: Springer Science & Business Media
ISBN: 3642973434
Category : Science
Languages : en
Pages : 252
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Scanning Tunneling Microscopy I provides a unique introduction to a novel and fascinating technique that produces beautiful images of nature on an atomic scale. It is the first of three volumes that together offer a comprehensive treatment of scanning tunneling microscopy, its diverse applications, and its theoretical treatment. In this volume the reader will find a detailed description of the technique itself and of its applications to metals, semiconductors, layered materials, adsorbed molecules and superconductors. In addition to the many representative results reviewed, extensive references to original work will help to make accessible the vast body of knowledge already accumulated in this field.
