Author: Yong Liang
Publisher:
ISBN:
Category :
Languages : en
Pages : 294

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Author: J. A. Kubby
Publisher:
ISBN:
Category : Scanning tunneling microscopy
Languages : en
Pages : 144

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Author: Hans-Joachim Güntherodt
Publisher: Springer Science & Business Media
ISBN: 3642792553
Category : Science
Languages : en
Pages : 288

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Book Description
Since the first edition of "Scanning 'funneling Microscopy I" has been pub lished, considerable progress has been made in the application of STM to the various classes of materials treated in this volume, most notably in the field of adsorbates and molecular systems. An update of the most recent develop ments will be given in an additional Chapter 9. The editors would like to thank all the contributors who have supplied up dating material, and those who have provided us with suggestions for further improvements. We also thank Springer-Verlag for the decision to publish this second edition in paperback, thereby making this book affordable for an even wider circle of readers. Hamburg, July 1994 R. Wiesendanger Preface to the First Edition Since its invention in 1981 by G. Binnig, H. Rohrer and coworkers at the IBM Zurich Research Laboratory, scanning tunneling microscopy (STM) has devel oped into an invaluable surface analytical technique allowing the investigation of real-space surface structures at the atomic level. The conceptual simplicity of the STM technique is startling: bringing a sharp needle to within a few Angstroms of the surface of a conducting sample and using the tunneling cur rent, which flows on application of a bias voltage, to sense the atomic and elec tronic surface structure with atomic resolution! Prior to 1981 considerable scepticism existed as to the practicability of this approach.

Author: Hans-Joachim Güntherodt
Publisher: Springer Science & Business Media
ISBN: 3642973434
Category : Science
Languages : en
Pages : 252

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Scanning Tunneling Microscopy I provides a unique introduction to a novel and fascinating technique that produces beautiful images of nature on an atomic scale. It is the first of three volumes that together offer a comprehensive treatment of scanning tunneling microscopy, its diverse applications, and its theoretical treatment. In this volume the reader will find a detailed description of the technique itself and of its applications to metals, semiconductors, layered materials, adsorbed molecules and superconductors. In addition to the many representative results reviewed, extensive references to original work will help to make accessible the vast body of knowledge already accumulated in this field.

Author: Stephen Lawrence Skala
Publisher:
ISBN:
Category :
Languages : en
Pages : 166

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Scanning tunneling microscopy (STM) has been used to study the (100) surface of GaAs and the (110) plane of cross-sectioned GaAs/AlGaAs heterolayers. Observation of the GaAs(100) surface with STM has characterized the c(8x2) reconstruction and shows that the c(8x2) consists of ordered (4x2) subunits. Each (4x2) subunit contains two As and two Ga dimers, contrary to previous descriptions which include only Ga dimers. This model of the c(8x2) reconstruction also agrees well with results from other experimental techniques. The (2x6) reconstruction is observed to be considerably more complex than the c(8x2) and bears little resemblance to either the c(2x8) or c(8x2) reconstructions. STM investigations on vicinal GaAs(100) substrates have clearly shown that steps migrate to form arrays of terraces $sim$175 A wide separated by regions of bunched steps on 2$sp{rm o}$ toward (110) oriented substrates after annealing to a temperature high enough to form a mixed c(8x2) and (2x6) reconstruction. The coexistence of the two reconstructions is critical to step bunching as the c(8x2) is observed to occupy only the terraces while the (2x6) exists predominately across the steps. Bunched step arrays are not observed on 2$sp{rm o}$ toward (110) oriented substrates, and a considerably higher ratio of (2x6) reconstructions is present on these substrates than on the 2$sp{rm o}$ toward (110) oriented substrates. STM results on cross-sectioned GaAs/AlGaAs heterolayers show differences in current contrast between p- and n-type layers which can be explained by band bending caused by charged oxygen adsorbates on AlGaAs.

Author: John D. Dow
Publisher:
ISBN:
Category : Scanning tunneling microscopy
Languages : en
Pages : 7

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Scanning tunneling microscopy and theory were combined to create novel depressive quantum dots at room temperature on the (110) surfaces of InSb --- dots which merit further exploration as potential nanopixels for tiny-device lithography; develop a strained-layer superlattice model of high-temperature superconductivity; image, understand, and make models of single-atom-high steps on III-V surfaces; invent and exploit a new kind of spectroscopy of surface states of semiconductors, called tipology; develop phenomenological models of variety of surface phenomena.

Author: Chunli Bai
Publisher: Springer Science & Business Media
ISBN: 9783540657156
Category : Medical
Languages : en
Pages : 392

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This book presents a unified view of the rapidly growing field of scanning tunneling microscopy and its many derivatives. After examining novel scanning-probe techniques and the instrumentation and methods, the book provides detailed accounts of STM applications. It examines limitations of the present-day investigations and provides insight into further trends. "I strongly recommend that Professor Bai's book be a part of any library that serves surface scientists, biochemists, biophysicists, material scientists, and students of any science or engineering field...There is no doubt that this is one of the better (most thoughtful) texts." Journal of the American Chemical Society (Review of 1/e)

Author:
Publisher: Academic Press
ISBN: 008086015X
Category : Science
Languages : en
Pages : 481

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Book Description
Scanning tunneling microscopy (STM) and its extensions have become revolutionary tools in the fields of physics, materials science, chemistry, and biology. These new microscopies have evolved from their beginnings asresearch aids to their current use as commercial tools in the laboratory and on the factory floor. New wonders continue to unfold as STM delivers atomic scale imaging and electrical characterization of the newly emerging nanometer world. This volume in the METHODS OF EXPERIMENTAL PHYSICS Series describes the basics of scanning tunneling microscopy, provides a fundamental theoretical understanding of the technique and a thorough description of the instrumentation, and examines numerous examples and applications. Written by the pioneers of the field, this volume is an essential handbook for researchers and users of STM, as well as a valuable resource for libraries.

Author: Brad Garni
Publisher:
ISBN:
Category :
Languages : en
Pages : 282

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Author: Jun Fei Zheng
Publisher:
ISBN:
Category :
Languages : en
Pages : 328

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