Resistive Switching in TiO2 Thin Films PDF Download
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Author: Lin Yang
Publisher: Forschungszentrum Jülich
ISBN: 3893367071
Category :
Languages : en
Pages : 141
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Book Description
Author: Lin Yang
Publisher: Forschungszentrum Jülich
ISBN: 3893367071
Category :
Languages : en
Pages : 141
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Book Description
Author: Marcel Reiners
Publisher:
ISBN: 9783893369706
Category :
Languages : en
Pages : 166
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Book Description
Author: Seong Geon Park
Publisher: Stanford University
ISBN:
Category :
Languages : en
Pages : 131
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Book Description
Resistive Random Access Memory (ReRAM) has attracted significant attention recently, as it is now considered as the promising candidate for the next generation of non-volatile memory device, due to its high density, low operating power, fast switching speed, and compatibility with conventional CMOS process. Among many resistance switching materials, TiO2 has been widely studied. However, the most challenging issue is that the underlying switching mechanism is lacking in-depth understanding. It has been proposed that the resistance switching is strongly coupled with the presence and a preferential distribution of oxygen vacancies involving the formation of a conductive filament. Although many experiments have been done to address the switching mechanism during the last decade, it is hard to figure out what happens at microscopic level. Therefore, systematic interpretation about the microscopic details of the role of oxygen vacancies in the formation of a conductive filament is essential. To address the conduction and the resistance switching mechanism, the effect of oxygen vacancies on the electronic structures in TiO2 has been investigated using first principles calculations based on density functional theory. In this dissertation, we report "ON"-state (Low Resistance State) conduction mechanism of rutile TiO2 including oxygen vacancies, and then the transition from "ON" to "OFF"-state (High Resistance State) is investigated. Although it is known that TiO2 exhibits n-type semiconducting property with extra electrons generated by the formation of oxygen vacancies, "ON" and "OFF"-state conductivity during resistance switching cannot be explained by isolated single oxygen vacancy. We calculated electronic characteristics such as density of states, electron localization function, band decomposed charge density distribution, and energy band structure, and show the influence of oxygen vacancy configurations on these properties and on the resistance change. Oxygen vacancy ordering and diffusion of either oxygen vacancy or hydrogen impurities have a significant impact on both the formation of the conductive filament and the transition from "ON" to "OFF"-state. Results from this study indicate that the "ON"-state conduction and resistance switching model that can be ascribed to the formation and rupture of conductive filament consisting of oxygen vacancy-ordered structure.
Author: Wan Shen
Publisher: Forschungszentrum Jülich
ISBN: 3893366083
Category :
Languages : en
Pages : 129
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Book Description
Author: Ruth Christine Landrock
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
Author: Irina Kärkkänen
Publisher: Forschungszentrum Jülich
ISBN: 3893369716
Category :
Languages : en
Pages : 151
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Book Description
Author: Daniele Ielmini
Publisher: John Wiley & Sons
ISBN: 3527680934
Category : Technology & Engineering
Languages : en
Pages : 1010
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Book Description
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
Author: Sebastian Wicklein
Publisher:
ISBN: 9783893369638
Category :
Languages : en
Pages : 145
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Book Description
Author: Shriram Ramanathan
Publisher: Springer Science & Business Media
ISBN: 1441906649
Category : Technology & Engineering
Languages : en
Pages : 344
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Book Description
Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers. Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.
Author: Kamakhya Prakash Misra
Publisher: Elsevier
ISBN: 0323886035
Category : Technology & Engineering
Languages : en
Pages : 618
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Book Description
Ceramic Science and Engineering: Basics to Recent Advancements covers the fundamentals, classification and applications surrounding ceramic engineering. In addition, the book contains an extensive review of the current published literature on established ceramic materials. Other sections present an extensive review of up-to-date research on new innovative ceramic materials and reviews recently published articles, case studies and the latest research outputs. The book will be an essential reference resource for materials scientists, physicists, chemists and engineers, postgraduate students, early career researchers, and industrial researchers working in R&D in the development of ceramic materials. Ceramic engineering deals with the science and technology of creating objects from inorganic and non-metallic materials. It combines the principles of chemistry, physics and engineering. Fiber-optic devices, microprocessors and solar panels are just a few examples of ceramic engineering being applied in everyday life. Advanced ceramics such as alumina, aluminum nitride, zirconia, ZnO, silicon carbide, silicon nitride and titania-based materials, each of which have their own specific characteristics and offer an economic and high-performance alternative to more conventional materials such as glass, metals and plastics are also discussed. Covers environmental barrier ceramic coatings, advanced ceramic conductive fuel cells, processing and machining technology in ceramic and composite materials, photoluminescent ceramic materials, perovskite ceramics and bioinspired ceramic materials Reviews both conventional, established ceramics and new, innovative advanced ceramics Contains an extensive review of the current published literature on established ceramic materials
