Residual Stress in Gallium Nitride Films Grown by Metalorganic Chemical Vapor Deposition PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Residual Stress in Gallium Nitride Films Grown by Metalorganic Chemical Vapor Deposition PDF full book. Access full book title Residual Stress in Gallium Nitride Films Grown by Metalorganic Chemical Vapor Deposition by Ying Chen. Download full books in PDF and EPUB format.
Author: Ying Chen
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 0
Get Book Here
Book Description
Author: Ying Chen
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 0
Get Book Here
Book Description
Author: Yankun Fu
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 0
Get Book Here
Book Description
Author: Robert Lorenzo
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages : 0
Get Book Here
Book Description
Author: Robert F Davis
Publisher: World Scientific
ISBN: 9814482692
Category : Technology & Engineering
Languages : en
Pages : 295
Get Book Here
Book Description
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Author: Bryan Stephen Shelton
Publisher:
ISBN:
Category :
Languages : en
Pages : 136
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Electroluminescent devices
Languages : en
Pages : 1014
Get Book Here
Book Description
Author: Li He
Publisher: Springer
ISBN: 3662527189
Category : Science
Languages : en
Pages : 698
Get Book Here
Book Description
This book introduces the basic framework of advanced focal plane technology based on the third-generation infrared focal plane concept. The essential concept, research advances, and future trends in advanced sensor arrays are comprehensively reviewed. Moreover, the book summarizes recent research advances in HgCdTe/AlGaN detectors for the infrared/ultraviolet waveband, with a particular focus on the numerical method of detector design, material epitaxial growth and processing, as well as Complementary Metal-Oxide-Semiconductor Transistor readout circuits. The book offers a unique resource for all graduate students and researchers interested in the technologies of focal plane arrays or electro-optical imaging sensors.
Author: William Edward Fenwick
Publisher:
ISBN:
Category : Gallium compounds
Languages : en
Pages :
Get Book Here
Book Description
ZnO, because of its similar lattice constant and thermal expansion coefficient, is a promising substrate for growth of low defect-density GaN. The major hurdles for GaN growth on ZnO are the instability of ZnO in a hydrogen atmosphere and out-diffusion of zinc and oxygen from the substrate. A process was developed for the MOCVD growth of wurtzite GaN and InxGa1-xN on ZnO, and the structural and optical properties of these films were studied. High zinc and oxygen concentrations remained an issue, however, and the diffusion of zinc and oxygen into the subsequent GaN layer was studied more closely.
Author: David J. Miller
Publisher: Stanford University
ISBN:
Category :
Languages : en
Pages : 131
Get Book Here
Book Description
Gallium nitride is an important material for the production of next-generation visible and near-UV optical devices, as well as for high temperature electronic amplifiers and circuits; however there has been no bulk method for the production of GaN substrates for device layer growth. Instead, thick GaN layers are heteroepitaxially deposited onto non-native substrates (usually sapphire) by one of two vapor phase epitaxy (VPE) techniques: MOVPE (metalorganic VPE) or HVPE (hydride VPE). Each method has its strengths and weaknesses: MOVPE has precise growth rate and layer thickness control but it is slow and expensive; HVPE is a low-cost method for high rate deposition of thick GaN, but it lacks the precise control and heterojunction layer growth required for device structures. Because of the large (14%) lattice mismatch, GaN grown on sapphire requires the prior deposition of a low temperature MOVPE nucleation layer using a second growth process in a separate deposition system. Here we present a novel hybrid VPE system incorporating elements of both techniques, allowing MOVPE and HVPE in a single growth run. In this way, a thick GaN layer can be produced directly on sapphire. GaN growth commences as small (50-100 nm diameter) coherent strained 3-dimensional islands which coalesce into a continuous film, after which 2-dimensional layer growth commences. The coalescence of islands imparts significant stress into the growing film, which increases with the film thickness until catastrophic breakage occurs, in-situ. Additionally, the mismatch in thermal expansion rates induces compressive stress upon cooling from the growth temperature of 1025°C. We demonstrate a growth technique that mitigates these stresses, by using a 2-step growth sequence: an initial high growth rate step resulting in a pitted but relaxed film, followed by a low growth rate smoothing layer. As a result, thick (> 50 [Mu]m) and freestanding films have been grown successfully. X-ray rocking curve linewidth of 105 arcseconds and 10K PL indicating no "yellow" emission indicate that the material quality is higher than that produced by conventional MOVPE. By further modifying the hybrid system to include a metallic Mn source, it is possible to grow a doped semi-insulating GaN template for use in high frequency electronics devices.
Author: Jingli Chen
Publisher:
ISBN:
Category :
Languages : en
Pages : 218
Get Book Here
Book Description
