Reliability of Silicon Bipolar Junction Transistors in Integrated Circuits PDF Download
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Author: Michael S. Carroll
Publisher:
ISBN:
Category :
Languages : en
Pages : 506
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Book Description
The reliability of silicon bipolar junction transistors in integrated circuits is investigated. The decrease in the common-emitter current during bipolar transistor operation in BiCMOS circuits is analyzed and modeled. The current gain degradation during reverse-bias stress of the emitter-base junction is found to be the result of interface trap generation at the oxide/silicon interface and charging of the oxide layer near the emitter-base junction perimeter by energetic electrons and holes to increase the base current. A model for interface trap generation based on the rupture of weak impurity bonds by hot carriers is presented to explain the meaured kinetics of the increase in interface trap density. A surface electron channel after heavy reverse-bias stress is shown to exist over the quasi-neutral base from positive oxide charging. The stress voltage thresholds for positive oxide charging are also measured and analyzed. Accelerated reverse emitter-bias stress methodologies are presented which allow for more rapid and accurate determination of bipolar transistor time-to-failure at low power supply voltages. Hot holes are found to be the primary cause of interface trap generation for low stress voltages. Significant transistor degradation is measured for stress voltages as low as 2.5V, indicating bipolar transistor reliability will remain an important concern in the future. The base current relaxation transient following reverse emitter-base bias stress is analyzed and attributed to a decrease of trapped positive charge in the oxide layer near the emitter-base junction perimeter. The trapped holes in the oxide are modeled to tunnel from oxide traps to the silicon valence band during base current relaxation. The relaxation transient is found to occur after a certain delay time. The effects of Ib relaxation are also found to decrease at low stress voltages. The bipolar transistor reliability during operation at high current densities in the forward-active mode is investigated. an increase in the current gain is found at moderate forward emitter-base bias, and this phenomenon is attributed to the passivation of polysilicon/.crystalline-silicon interface traps in the emitter by atomic hydrogen. A model is presented which explains the measured results in both n/p/n and p/n/p transistors.
Author: Michael S. Carroll
Publisher:
ISBN:
Category :
Languages : en
Pages : 506
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Book Description
The reliability of silicon bipolar junction transistors in integrated circuits is investigated. The decrease in the common-emitter current during bipolar transistor operation in BiCMOS circuits is analyzed and modeled. The current gain degradation during reverse-bias stress of the emitter-base junction is found to be the result of interface trap generation at the oxide/silicon interface and charging of the oxide layer near the emitter-base junction perimeter by energetic electrons and holes to increase the base current. A model for interface trap generation based on the rupture of weak impurity bonds by hot carriers is presented to explain the meaured kinetics of the increase in interface trap density. A surface electron channel after heavy reverse-bias stress is shown to exist over the quasi-neutral base from positive oxide charging. The stress voltage thresholds for positive oxide charging are also measured and analyzed. Accelerated reverse emitter-bias stress methodologies are presented which allow for more rapid and accurate determination of bipolar transistor time-to-failure at low power supply voltages. Hot holes are found to be the primary cause of interface trap generation for low stress voltages. Significant transistor degradation is measured for stress voltages as low as 2.5V, indicating bipolar transistor reliability will remain an important concern in the future. The base current relaxation transient following reverse emitter-base bias stress is analyzed and attributed to a decrease of trapped positive charge in the oxide layer near the emitter-base junction perimeter. The trapped holes in the oxide are modeled to tunnel from oxide traps to the silicon valence band during base current relaxation. The relaxation transient is found to occur after a certain delay time. The effects of Ib relaxation are also found to decrease at low stress voltages. The bipolar transistor reliability during operation at high current densities in the forward-active mode is investigated. an increase in the current gain is found at moderate forward emitter-base bias, and this phenomenon is attributed to the passivation of polysilicon/.crystalline-silicon interface traps in the emitter by atomic hydrogen. A model is presented which explains the measured results in both n/p/n and p/n/p transistors.
Author: Kurt Pfaff
Publisher:
ISBN:
Category :
Languages : en
Pages : 152
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Book Description
Author: Peter Ashburn
Publisher: John Wiley & Sons
ISBN: 0470090731
Category : Technology & Engineering
Languages : en
Pages : 286
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Book Description
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Author: Kurt Hoffmann
Publisher: John Wiley & Sons
ISBN: 0470020695
Category : Technology & Engineering
Languages : en
Pages : 510
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Book Description
The development of large-scale integrated systems on a chip has had a dramatic effect on circuit design methodology. Recent years have seen an escalation of interest in systems level integration (system-on-a-chip) and the development of low power, high chip density circuits and systems. Kurt Hoffmann sets out to address a wide range of issues relating to the design and integration of integrated circuit components and provides readers with the methodology by which simple equations for the estimation of transistor geometries and circuit behaviour can be deduced. The broad coverage of this unique book ranges from field effect transistor design, MOS transistor modelling and the fundamentals of digital CMOS circuit design through to MOS memory architecture and design. Highlights the increasing requirement for information on system-on-a-chip design and integration. Combines coverage of semiconductor physics, digital VLSI design and analog integrated circuits in one volume for the first time. Written with the aim of bridging the gap between semiconductor device physics and practical circuit design. Introduces the basic behaviour of semiconductor components for ICs and covers the design of both digital and analog circuits in CMOS and BiCMOS technologies. Broad coverage will appeal to both students and practising engineers alike. Written by a respected expert in the field with a proven track record of publications in this field. Drawing upon considerable experience within both industry and academia, Hoffmann’s outstanding text, will prove an invaluable resource for designers, practising engineers in the semiconductor device field and electronics systems industry as well as Postgraduate students of microelectronics, electrical and computer engineering.
Author: A. Christou
Publisher: RIAC
ISBN: 096526694X
Category : Technology & Engineering
Languages : en
Pages : 392
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Book Description
Author: M F Chang
Publisher: World Scientific
ISBN: 9814501069
Category : Technology & Engineering
Languages : en
Pages : 437
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Book Description
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Author: Arokia Nathan
Publisher: John Wiley & Sons
ISBN: 1394202466
Category : Technology & Engineering
Languages : en
Pages : 469
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Book Description
75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
Author: Tho T Vu
Publisher: World Scientific
ISBN: 9814486434
Category : Technology & Engineering
Languages : en
Pages : 363
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Book Description
This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies.
Author: Niccolò Rinaldi
Publisher: CRC Press
ISBN: 1000794407
Category : Technology & Engineering
Languages : en
Pages : 377
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Book Description
The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Author: Peter Ashburn
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 222
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Book Description
Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
