Reflection High-energy Electron Diffraction Studies of Semiconductor Interfaces During Molecular Beam Epitaxy Growth PDF Download
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Author: Wolfgang Braun
Publisher:
ISBN:
Category :
Languages : en
Pages : 192
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Author: Wolfgang Braun
Publisher:
ISBN:
Category :
Languages : en
Pages : 192
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Author: Wolfgang Braun
Publisher: Springer Science & Business Media
ISBN: 9783540651994
Category : Science
Languages : en
Pages : 240
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The book describes RHEED (reflection high-energy electron diffraction) used as a tool for crystal growth. New methods using RHEED to characterize surfaces and interfaces during crystal growth by MBE (molecular beam epitaxy) are presented. Special emphasis is put on RHEED intensity oscillations, segregation phenomena, electron energy-loss spectroscopy and RHEED with rotating substrates.
![Some Reflection High Energy Electron Diffraction Studies of Molecular Beam Epitaxial Growth of GaAs/Al[x]Ga[1-x]As (100) Interfaces and Electron Microscope Studies of GaAs/Al[x]Ga[1-x]As (100) and GaAs/InAs (100) Semiconductor Modulated Structures PDF](https://books.google.com/books/content/images/frontcover/bLpQtwAACAAJ?fife=w80-h100)
Author: Ming-Yuan Yen
Publisher:
ISBN:
Category : Electron probe microanalysis
Languages : en
Pages : 406
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Author: Paul Pukite
Publisher: Paul Pukite
ISBN: 0964474123
Category :
Languages : en
Pages : 195
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Author: P.K. Larsen
Publisher: Springer Science & Business Media
ISBN: 146845580X
Category : Science
Languages : en
Pages : 526
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Book Description
This volume contains the papers presented at the NATO Advanced Research Workshop in "Reflection High Energy Electron Diffraction and Reflection Electron Imaging of Surfaces" held at the Koningshof conference center, Veldhoven, the Netherlands, June 15-19, 1987. The main topics of the workshop, Reflection High Energy Electron Diffraction (RHEED) and Reflection Electron Microscopy (REM), have a common basis in the diffraction processes which high energy electrons undergo when they interact with solid surfaces at grazing angles. However, while REM is a new technique developed on the basis of recent advances in transmission electron microscopy, RHEED is an old method in surface crystallography going back to the discovery of electron diffraction in 1927 by Davisson and Germer. Until the development of ultra high vacuum techniques in the 1960's made instruments using slow electrons more accessable, RHEED was the dominating electron diffraction technique. Since then and until recently the method of Low Energy Electron Diffraction (LEED) largely surpassed RHEED in popularity in surface studies. The two methods are closely related of course, each with its own specific advantages. The grazing angle geometry of RHEED has now become a very useful feature because this makes it ideally suited for combination with the thin growth technique of Molecular Beam Epitaxy (MBE). This combination allows in-situ studies of freshly grown and even growing surfaces, opening up new areas of research of both fundamental and technological importance.
Author: Ayahiko Ichimiya
Publisher: Cambridge University Press
ISBN: 9780521453738
Category : Science
Languages : en
Pages : 370
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Author: John Orton
Publisher: OUP Oxford
ISBN: 0191061166
Category : Science
Languages : en
Pages : 529
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The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Author: Gunther Springholz
Publisher:
ISBN: 9783853206485
Category : Heterostructures
Languages : en
Pages : 285
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Author: Jan Paul Antoni Van der Wagt
Publisher:
ISBN:
Category :
Languages : en
Pages : 326
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Author: Wolfgang Braun
Publisher: Springer
ISBN: 9783662156131
Category :
Languages : en
Pages : 236
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