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Category :
Languages : en
Pages : 157
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Book Description
The primary goal of this contract develop a real-time monitoring capability for HgCdTe composition during MBE growth. This goal was realized by demonstrating a + or - 0.001 accuracy in the composition values determined by the Spectroscopic Ellipsometry (SE) in situ sensor, which was confirmed by exsitu FTIR measurements. Attaining this level of success required significant improvements in the ellipsometer system hardware and data analysis software, the creation of accurate optical constant libraries for the CdZnTe Substrate and HgCdTe film materials, and the development of a systematic methodology for acquiring and analyzing insitu SE data in the MBE growth environment. These improvements and developments are part of an extensive 'knowledge base' which evolved throughout this contract, and is encapsulated in this report. This knowledge base is not specific only to HgCdTe growth; it is also directly relevant to the insitu SE monitoring of any epitaxial semiconductor growth process. In addition to the HgCdTe composition monitoring capabilities, insitu SE was also found to be very useful in monitoring the temperature and the surface condition of the CdZnTe substrate before growth, surface roughening during the initiation of HgCdTe growth, and the surface morphology during ECR etching of HgCdTe films.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 157
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Book Description
The primary goal of this contract develop a real-time monitoring capability for HgCdTe composition during MBE growth. This goal was realized by demonstrating a + or - 0.001 accuracy in the composition values determined by the Spectroscopic Ellipsometry (SE) in situ sensor, which was confirmed by exsitu FTIR measurements. Attaining this level of success required significant improvements in the ellipsometer system hardware and data analysis software, the creation of accurate optical constant libraries for the CdZnTe Substrate and HgCdTe film materials, and the development of a systematic methodology for acquiring and analyzing insitu SE data in the MBE growth environment. These improvements and developments are part of an extensive 'knowledge base' which evolved throughout this contract, and is encapsulated in this report. This knowledge base is not specific only to HgCdTe growth; it is also directly relevant to the insitu SE monitoring of any epitaxial semiconductor growth process. In addition to the HgCdTe composition monitoring capabilities, insitu SE was also found to be very useful in monitoring the temperature and the surface condition of the CdZnTe substrate before growth, surface roughening during the initiation of HgCdTe growth, and the surface morphology during ECR etching of HgCdTe films.
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ISBN:
Category :
Languages : en
Pages : 13
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Book Description
We present recent progress on the use of an integrated real-time sensing and control system for monitoring and controlling substrate temperature, layer composition, and effusion cell flux during MBE growth of HgCdTe epilayers for advanced IR detectors. Substrate temperature is measured and controlled in real-time using absorption-edge spectroscopy (ABES). This allows the substrate temperature to be maintained at +/-1.5 deg C from the desired setpoint, even during actuation of effusion cell shutters which under conventional thermocouple-based control would produce a substantial (10-15 deg C) temperature change. In situ spectroscopic ellipsometry (SE) is used for monitoring HgCdTe layer composition in real-time. We describe the development of a comprehensive temperature- and composition-dependent SE dielectric function database which can be used for accurate and precise monitoring of Hg(1-x)Cd(x)Te layer composition over a wide range of x-values, from 0.2 to 0.42. The composition changes inferred from the real-time SE measurements obtained during growth of a two-layer structure are in excellent agreement with actual composition vs. depth profiles obtained using post-growth SIMS analysis. Likewise, the accuracy and precision of SE measurements conducted over multiple growth runs are shown to be suitable for robust SE-based composition control. Changes in gas-phase concentration of Cd atoms produced by a CdTe effusion cell are detected using an atomic absorption method (optical-absorption flux monitoring OFM). The OFM method allows changes in HgCdTe layer composition to be correlated directly with variations in Cd flux. The in situ optical sensors are linked using a custom software framework to provide the foundation for integrated, real-time monitoring and control of HgCdTe MBE growth of high performance IR detector structures over a wide range of compositions, layer thickness and substrate temperature.
Author: Leo Anthony Almeida
Publisher:
ISBN:
Category :
Languages : en
Pages : 192
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Book Description
Author: P.F. Williams
Publisher: Springer Science & Business Media
ISBN: 9401158843
Category : Technology & Engineering
Languages : en
Pages : 610
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Book Description
Plasma Processing of Semiconductors contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications. Audience: Coverage ranges from introductory to state of the art, thus the book is suitable for graduate-level students seeking an introduction to the field as well as established workers wishing to broaden or update their knowledge.
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Category : Aeronautics
Languages : en
Pages : 440
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Book Description
Author: Gertjan Koster
Publisher: Elsevier
ISBN: 0857094955
Category : Technology & Engineering
Languages : en
Pages : 295
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Book Description
Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research. Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth. With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area. Chapters review electron diffraction techniques, including the methodology for observations and measurements Discusses the principles and applications of photoemission techniques Examines alternative in situ characterisation techniques
Author: Gurinder Kaur Ahluwalia
Publisher: Springer
ISBN: 331941190X
Category : Technology & Engineering
Languages : en
Pages : 472
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Book Description
This book introduces readers to a wide range of applications for elements in Group 16 of the periodic table, such as, optical fibers for communication and sensing, X-ray imaging, electrochemical sensors, data storage devices, biomedical applications, photovoltaics and IR detectors, the rationale for these uses, the future scope of their applications, and expected improvements to existing technologies. Following an introductory section, the book is broadly divided into three parts—dealing with Sulfur, Selenium, and Tellurium. The sections cover the basic structure of the elements and their compounds in bulk and nanostructured forms; properties that make these useful for various applications, followed by applications and commercial products. As the global technology revolution necessitates the search for new materials and more efficient devices in the electronics and semiconductor industry, Applications of Chalcogenides: S, Se, and Te is an ideal book for a wide range of readers in industry, government and academic research facilities looking beyond silicon for materials used in the electronic and optoelectronic industry as well as biomedical applications.
Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313031
Category : Technology & Engineering
Languages : en
Pages : 907
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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 770
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Book Description
Author: M. Omar Manasreh
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 512
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Book Description
This book is unique in that it combines for the first time the infrared detectors and infrared lasers and emitters in one volume. It is merely a step, however, in a very fast-changing field, toward achieving an understanding of novel structures that can be used for high-performance infrared detectors, imaging arrays, infrared lasers and sources. Internationally-known experts discuss recent advances in materials structures, processing and device performances, with presentations crossing materials and discipline boundaries. Recent investigations based on III-V, II-VI and IV bulk semiconductors, quantum wells, and superlattices for long-wavelength infrared detectors, emitters, sources and materials are featured. Topics include: antimonide-related materials and devices; quantum wells and devices; quantum infrared detectors; HgCdTe - materials, devices and processing; nonlinear and parametric oscillator material; interdiffusion in heterostructures and related topics.
