Real-Time Spectroscopic Ellipsometry as an In-Situ Diagnostic for Hot-Wire CVD Growth of Amorphous and Epitaxial Si PDF Download

Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Real-Time Spectroscopic Ellipsometry as an In-Situ Diagnostic for Hot-Wire CVD Growth of Amorphous and Epitaxial Si PDF full book. Access full book title Real-Time Spectroscopic Ellipsometry as an In-Situ Diagnostic for Hot-Wire CVD Growth of Amorphous and Epitaxial Si by T. Wang. Download full books in PDF and EPUB format.

Real-Time Spectroscopic Ellipsometry as an In-Situ Diagnostic for Hot-Wire CVD Growth of Amorphous and Epitaxial Si

Real-Time Spectroscopic Ellipsometry as an In-Situ Diagnostic for Hot-Wire CVD Growth of Amorphous and Epitaxial Si PDF Author: T. Wang
Publisher:
ISBN:
Category :
Languages : en
Pages : 5

Get Book Here

Book Description
Real-time spectroscopic ellipsometry (RTSE) has proven to be an exceptionally valuable tool in the optimization of hot wire CVD (HWCVD) growth of both silicon heterojunction (SHJ) solar cells and thin epitaxial layers of crystal silicon (epi-Si). For SHJ solar cells, RTSE provides real-time thickness information and rapid feedback on the degree of crystallinity of the thin intrinsic layers used to passivate the crystal silicon (c-Si) wafers. For epi-Si growth, RTSE provides real-time feedback on the crystallinity and breakdown of the epitaxial growth process. Transmission electron microscopy (TEM) has been used to verify the RTSE analysis of thickness and crystallinity. In contrast to TEM, RTSE provides feedback in real time or same-day, while TEM normally requires weeks. This rapid feedback has been a key factor in the rapid progress of both the SHJ and epi-Si projects.