Rare-earth Doped GaN :. PDF Download
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Author: Michael Wraback
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Michael Wraback
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: / Christopher Jay Ellis
Publisher:
ISBN:
Category :
Languages : en
Pages : 94
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Author: Dong-Seon Lee
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659357282
Category :
Languages : en
Pages : 128
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Book Description
Rare-earth (RE)-doped GaN has been shown to be an extremely versatile optoelectronic material, with light emission throughout the visible spectrum as well as at important near-infrared wavelengths. RE-doping of GaN has resulted in the successful fabrication of electroluminescent devices (ELD) with red, green and blue (RGB) color emissions using Eu, Er and Tm, respectively. Throughout studies with GaN: REs we have observed that RE optical emission from GaN films is a strong function of the parameters such as RE concentration, Ga flux, growth temperature and so on. Therefore, it was necessary to study the effect of those parameters on optical and structural properties of RE-doped GaN films by using Er-doped GaN in order to maximize ELD brightness and efficiency as well as to apply the results to real devices. As a result of optimization based on various optical and morphological investigations, we reached a conclusion: (1) the optimum Er concentration is 1 at. %; (2) the growth temperature is 600 C; (3) the optimum growth condition of Er optical activity is under slightly N-rich flux near the stoichiometric region.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 7
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The emission properties of rare earth (RE)-doped GaN are of significant current interest for applications in full color displays, white lighting technology, and optical communications. We are currently investigating the photoluminescence (PL) properties of RE (Er, Eu, Tm)-doped GaN thin-films prepared by solid-source molecular beam epitaxy. The most intense visible PL under above-gap excitation is observed from GaN:Eu (red: 622 nm) followed by GaN:Er (green: 537 nm, 558 nm), and then GaN:Tm (blue: 479 nm). In this paper, we present spectroscopic results on the Ga-flux dependence of the Er3+ PL properties from GaN:Er and we report on the identification of different Eu3+ centers in GaN:Eu through high-resolution PL excitation (PLE) studies. In addition, we observed an enhancement of the blue Tm3+ PL from AlGaN:Tm compared to GaN:Tm. Intense blue PL from Tm3+ ions was also obtained from AlN:Tm under below-gap pumping.
Author: V. Dierolf
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 318
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This book brings together more than 100 specialists from around the world to examine the status and emerging trends in the field of rare-earth-doped materials. These materials are used and/or are potential candidates for applications as lasers, light-emitting diodes, phosphors, displays and other photonic applications. Progress in growth, doping methods, characterization and device applications are reviewed. Topics include: rare-earth doping in nitrides; rare-earth doping in silicon-related materials; mechanisms and laser materials and phosphors and scintillators.
Author: Michael Wraback
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages : 20
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Author: Aaron B. Blanning (MAJ, USA)
Publisher:
ISBN:
Category :
Languages : en
Pages : 196
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Author: Kevin Peter O'Donnell
Publisher: Springer Science & Business Media
ISBN: 9048128773
Category : Science
Languages : en
Pages : 366
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This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Author: Volkmar Dierolf
Publisher: Woodhead Publishing
ISBN: 008100060X
Category : Science
Languages : en
Pages : 472
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Book Description
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics
Author: Ronald H. Birkhahn
Publisher:
ISBN:
Category :
Languages : en
Pages : 204
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