Rapid Thermal Low-pressure Metal-organic Chemical Vapor Deposition (RT-LPMOCVD) of Semiconductor, Dielectric and Metal Film Onto InP and Related Materials PDF Download
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Author: A.. Feingold
Publisher:
ISBN:
Category :
Languages : en
Pages : 48
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Author: A.. Feingold
Publisher:
ISBN:
Category :
Languages : en
Pages : 48
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Book Description
Author: Paul H. Holloway
Publisher: Cambridge University Press
ISBN: 0080946143
Category : Technology & Engineering
Languages : en
Pages : 937
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Book Description
This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
Author: Hari Singh Nalwa
Publisher: Elsevier
ISBN: 0080533248
Category : Technology & Engineering
Languages : en
Pages : 3451
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Book Description
This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures. Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.
Author: Hari Singh Nalwa
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 678
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Book Description
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 976
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Author: S. J. Pearton
Publisher: Mrs Proceedings
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 944
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: K. Zanio
Publisher:
ISBN:
Category :
Languages : en
Pages : 147
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Book Description
The planar reactive deposition (PRD) technique was developed to grow InP thin films by vacuum evaporation in a H2 reactive atmosphere. InP films with room temperature mobilities as high as 4062 sq cm/Vsec and carrier concentrations (N(D)-N(A)) as low as 10 to the 16th power cu/cm were grown on (100) semi-insulating substrates. N+ films with carrier concentration of a few times 10 to the 19th power cu/cm were obtained using Sn doping. N+/N/N+ multilayer structures, and large area (10 cm) epitaxial films were grown on InP substrates. Epitaxial films of InGaAs, InGaP and InGaAsP were grown by PRD, and lattice matched to InP and GaAs substrates. As an intermediate step to grow InP by low pressure metal organic chemical vapor deposition (LPMOCVD), GaAs was grown by LPMOCVD. Unintentionally doped p-type GaAs, with hole concentration as high as a few times 10 to the 20th power cu cm, was grown at the Ga-rich three-phase boundary. By undertaking growth away from the boundary, the hole concentration decreased, and ionized impurity concentrations (N(A) + N(D)) as low as 10 to the 16th power cu cm were obtained. Major background impurities for growth of InP by PRD and GaAs by LPMOCVD are carbon and oxygen. Growth of InP in a halide environment is recommended to obtain higher purity InP thin films by low cost vacuum technologies. (Author).
Author: S. J. Pearton
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 560
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Book Description
State-of-the-art reviews on all the major areas of interest are brought together in this book, namely the role of hydrogen during epitaxial growth, its entry into the material during processing, its subsequent diffusivity and bonding with dopants, other impurities or defects, its effect on device performance and reliability and positive uses for hydrogen in passivating surfaces.
Author: David Hodul
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 544
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Fred Roozeboom
Publisher: The Electrochemical Society
ISBN: 9781566772327
Category : Technology & Engineering
Languages : en
Pages : 470
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Book Description
