Radiation Damage and Defects in Semiconductors PDF Download
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Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 480
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Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 480
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Author: E. W. J. Mitchell
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: C. Claeys
Publisher: Springer Science & Business Media
ISBN: 3662049740
Category : Science
Languages : en
Pages : 424
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Book Description
This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Author: The institute of physics
Publisher:
ISBN:
Category :
Languages : en
Pages : 458
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Author: E.W.J. Mitchell
Publisher:
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Category :
Languages : en
Pages :
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Author: Allan H. Johnston
Publisher: World Scientific
ISBN: 9814277118
Category : Technology & Engineering
Languages : en
Pages : 376
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Book Description
This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms. It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.
Author:
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ISBN:
Category :
Languages : en
Pages : 458
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Author:
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ISBN:
Category :
Languages : en
Pages : 46
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Author: J. E. Whitehouse
Publisher:
ISBN:
Category :
Languages : en
Pages : 468
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Book Description
The report presents the proceedings of International Conference on Defects in Semiconductors, consisting of 54 articles showing recent research results on the production and properties of lattice defects in semiconductors. As in the previous meetings of this bi-annual series, emphasis was on electron and neutron damage in silicon, gallium arsenide and germanium, closely followed by ion implantation defect studies. Interest in the other III-V and II-VI compounds has increased. Reported use of special techniques includes electron microscopy, channeling, local vibrational modes, electron spin resonance and Mossbauer effect. (Author).
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 458
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