Quantum Edge Transport in Topological Insulators

Quantum Edge Transport in Topological Insulators PDF Author: Andrew J. Bestwick
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Book Description
In the quantum Hall effect, electrons circulate in one direction around the edge of a 2D sample. The robustness of these states is protected by the topology of the band structure and scattering is only possible if thermally-activated 2D conduction provides a path across the bulk. However, the environmental conditions required for the effect (large magnetic fields and, usually, low temperatures) make it unsuitable for most practical applications. This dissertation discusses the implementation of two similar topological transport phenomena, in the absence of magnetic fields, using the class of materials known as topological insulators. First, it reports on investigations into the quantum spin Hall effect, a time-reversal-symmetric state with counterpropagating, spin-polarized edge channels. Mean free paths in this case are limited to only a few micrometers due to a scattering mechanism under investigation. Second, it reports on recent results on the quantum anomalous Hall effect demonstrating part-per-10,000 conductance quantization, arising from nearly perfect transport through one-way edge channels, in magnetically-doped thin films of 3D topological insulators. It shows that dissipation only occurs due to thermally-activated states that can be nearly eliminated via an unexpected magnetocaloric effect.

Quantum Edge Transport in Topological Insulators

Quantum Edge Transport in Topological Insulators PDF Author: Andrew J. Bestwick
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Book Description
In the quantum Hall effect, electrons circulate in one direction around the edge of a 2D sample. The robustness of these states is protected by the topology of the band structure and scattering is only possible if thermally-activated 2D conduction provides a path across the bulk. However, the environmental conditions required for the effect (large magnetic fields and, usually, low temperatures) make it unsuitable for most practical applications. This dissertation discusses the implementation of two similar topological transport phenomena, in the absence of magnetic fields, using the class of materials known as topological insulators. First, it reports on investigations into the quantum spin Hall effect, a time-reversal-symmetric state with counterpropagating, spin-polarized edge channels. Mean free paths in this case are limited to only a few micrometers due to a scattering mechanism under investigation. Second, it reports on recent results on the quantum anomalous Hall effect demonstrating part-per-10,000 conductance quantization, arising from nearly perfect transport through one-way edge channels, in magnetically-doped thin films of 3D topological insulators. It shows that dissipation only occurs due to thermally-activated states that can be nearly eliminated via an unexpected magnetocaloric effect.

Topological Insulators

Topological Insulators PDF Author: Gregory Tkachov
Publisher: CRC Press
ISBN: 9814613266
Category : Science
Languages : en
Pages : 180

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Book Description
This book is the result of dynamic developments that have occurred in condensed matter physics after the recent discovery of a new class of electronic materials: topological insulators. A topological insulator is a material that behaves as a band insulator in its interior, while acting as a metallic conductor at its surface. The surface current car

Topological Insulators

Topological Insulators PDF Author: C. Brüne
Publisher: Elsevier Inc. Chapters
ISBN: 0128086866
Category : Science
Languages : en
Pages : 27

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Book Description
This chapter will focus on the experimental properties of the quantum spin Hall effect in HgTe quantum well structures. HgTe quantum wells above a critical thickness are 2-dimensional topological insulators. The most prominent signature of the non-trivial topology in these systems is the occurrence of the quantum spin Hall effect when the Fermi energy is located inside the bulk band gap. We will present the main experimental results we obtained for transport in the quantum spin Hall regime and discuss how they confirm the prediction of the quantum spin Hall effect as a helical edge state system consisting of two counterpropagating oppositely spin polarized edge states.

Emergent Transport Properties of Magnetic Topological Insulator Heterostructures

Emergent Transport Properties of Magnetic Topological Insulator Heterostructures PDF Author: Kenji Yasuda
Publisher: Springer Nature
ISBN: 981157183X
Category : Computers
Languages : en
Pages : 109

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Book Description
This book reveals unique transport phenomena and functionalities in topological insulators coupled with magnetism and superconductivity. Topological insulators are a recently discovered class of materials that possess a spin-momentum-locked surface state. Their exotic spin texture makes them an exciting platform for investigating emergent phenomena, especially when coupled with magnetism or superconductivity. Focusing on the strong correlation between electricity and magnetism in magnetic topological insulators, the author presents original findings on current-direction-dependent nonreciprocal resistance, current-induced magnetization reversal and chiral edge conduction at the domain wall. In addition, he demonstrates how the coupling between superconductivity and topological surface state leads to substantial nonreciprocal resistance. The author also elucidates the origins of these phenomena and deepens readers’ understanding of the topologically nontrivial electronic state. The book includes several works which are published in top journals and were selected for the President’s Award by the University of Tokyo and for the Ikushi Prize, awarded to distinguished Ph.D. students in Japan.

Quantum Transport in 2 and 3 Dimensional Topological Insulators

Quantum Transport in 2 and 3 Dimensional Topological Insulators PDF Author: Di Xiao
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Book Description
Topological insulators are materials that are insulating in the bulk but that conduct via topologically protected states on the boundary. The concept of topology in condensed matter physics was first introduced to explain the integer quantum Hall (IQH) effect. The perfect quantization of these topologically protected edge states, insensitive to sample geometry and disorder, stimulated an extensive search for many exciting new topological materials. One of the milestones along the journey was the theoretical prediction and experimental discovery of Z2 topological insulators.The first class of Z2 topological insulators discovered was the 2-dimensional topological insulator (2D TI), also known as the quantum spin Hall (QSH) insulator. The 2D TI can be viewed as a variation of the IQH system but with time-reversal-symmetry (TRS). The topological invariant for a 2D TI is the Z2 number, defined by its nontrivial band structure instead of the Chern number in the IQH case. Generalizing this idea to 3 dimensions led to the discovery of the 3D TI with four Z2 invariants. Both the 2D and 3D TIs are of interest as model platforms for testing theoretical problems of fundamental interest. For instance, they allow us to realize artificial condensed matter analogs of fundamental particles such as Majorana fermions and axions that have yet to be observed in nature. They are also of interest for potential technological applications, principally spintronics and quantum computing.This dissertation focuses on the synthesis, characterization, and transport properties of both 2D and 3D TIs. We first discuss the 2D TI candidate material system, type II InAs/GaSb quantum wells, which exhibits a rich topological phase diagram that can be tuned by several parameters such as sample geometry or electrostatic gating. By changing the thicknesses of relevant layers, we are able to enter a new insulating regime where unexpected high-density quantum oscillations are observed. We elucidate this phenomenon through theoretical calculation and through control experiments. The seemingly controversial coexistence of high density states and the insulating regime can be explained by the effect of the attractive Coulomb interaction, which was not considered in earlier theories.The second topic we address is quantum transport in 3D TI systems. Breaking the TRS of the 3D TI surface states leads to many exotic phenomena, including the quantum anomalous Hall (QAH) effect and the axion insulator state. By constructing a sandwich heterostructure that has different magnetic coercive fields in the top and bottom magnetic layers, while keeping the center layer free from magnetic impurities, both the QAH and the axion insulator state can be observed in low-temperature transport measurements, when the magnetization alignment of the top and bottom layers is parallel and antiparallel, respectively. We also discuss the scaling behavior of the topological quantum phase transition between these two states.

Topological Insulators and Topological Superconductors

Topological Insulators and Topological Superconductors PDF Author: B. Andrei Bernevig
Publisher: Princeton University Press
ISBN: 1400846730
Category : Science
Languages : en
Pages : 264

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Book Description
This graduate-level textbook is the first pedagogical synthesis of the field of topological insulators and superconductors, one of the most exciting areas of research in condensed matter physics. Presenting the latest developments, while providing all the calculations necessary for a self-contained and complete description of the discipline, it is ideal for graduate students and researchers preparing to work in this area, and it will be an essential reference both within and outside the classroom. The book begins with simple concepts such as Berry phases, Dirac fermions, Hall conductance and its link to topology, and the Hofstadter problem of lattice electrons in a magnetic field. It moves on to explain topological phases of matter such as Chern insulators, two- and three-dimensional topological insulators, and Majorana p-wave wires. Additionally, the book covers zero modes on vortices in topological superconductors, time-reversal topological superconductors, and topological responses/field theory and topological indices. The book also analyzes recent topics in condensed matter theory and concludes by surveying active subfields of research such as insulators with point-group symmetries and the stability of topological semimetals. Problems at the end of each chapter offer opportunities to test knowledge and engage with frontier research issues. Topological Insulators and Topological Superconductors will provide graduate students and researchers with the physical understanding and mathematical tools needed to embark on research in this rapidly evolving field.

Topological Insulators

Topological Insulators PDF Author: Frank Ortmann
Publisher: John Wiley & Sons
ISBN: 3527337024
Category : Technology & Engineering
Languages : en
Pages : 434

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Book Description
There are only few discoveries and new technologies in physical sciences that have the potential to dramatically alter and revolutionize our electronic world. Topological insulators are one of them. The present book for the first time provides a full overview and in-depth knowledge about this hot topic in materials science and condensed matter physics. Techniques such as angle-resolved photoemission spectrometry (ARPES), advanced solid-state Nuclear Magnetic Resonance (NMR) or scanning-tunnel microscopy (STM) together with key principles of topological insulators such as spin-locked electronic states, the Dirac point, quantum Hall effects and Majorana fermions are illuminated in individual chapters and are described in a clear and logical form. Written by an international team of experts, many of them directly involved in the very first discovery of topological insulators, the book provides the readers with the knowledge they need to understand the electronic behavior of these unique materials. Being more than a reference work, this book is essential for newcomers and advanced researchers working in the field of topological insulators.

Studies on Time-reversal Invariant Topological Insulators

Studies on Time-reversal Invariant Topological Insulators PDF Author: Joseph Maciejko
Publisher: Stanford University
ISBN:
Category :
Languages : en
Pages : 242

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Book Description
This dissertation brings together a number of topics in the theory of time-reversal invariant topological insulators. The first four chapters are devoted to the transport properties of the two-dimensional (2D) quantum spin Hall state. We explain nonlocal transport measurements in mercury telluride (HgTe) quantum wells in terms of a Landauer-Büttiker theory of helical edge transport and confirm the discovery of the quantum spin Hall state in this material. We find that decoherence can lead to backscattering without breaking microscopic time-reversal symmetry. As an example of incoherent scattering, we study a Kondo impurity in an interacting helical edge liquid. A renormalization group analysis shows the existence of an impurity quantum phase transition governed by the Luttinger parameter of the edge liquid between a local helical Fermi liquid with T^6 scaling of the low-temperature conductance, and an insulating strongly correlated phase with fractionally charged emergent excitations. In the presence of a time-reversal symmetry breaking magnetic field, it is known that even coherent scattering can lead to backscattering. Through exact numerical diagonalization we find that nonmagnetic quenched disorder has a strong localizing effect on the edge transport if the disorder strength is comparable to the bulk gap. The predicted magnetoconductance agrees qualitatively with experiment. The last two chapters are devoted to 3D topological insulators. We propose a combined magnetooptical Kerr and Faraday rotation experiment as a universal measure of the Z_2 invariant. Finally, we propose a fractional generalization of 3D topological insulators in strongly correlated systems, characterized by ground state degeneracy on topologically nontrivial spatial 3-manifolds, a quantized fractional bulk magnetoelectric polarizability without time-reversal symmetry breaking, and a halved fractional quantum Hall effect on the surface.

Transport Studies of Mesoscopic and Magnetic Topological Insulators

Transport Studies of Mesoscopic and Magnetic Topological Insulators PDF Author: Abhinav Kandala
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Book Description
Topological Insulators (TI) are a novel class of materials that are ideally insulating in the bulk, but have gapless, metallic states at the surface. These surface states have very exciting properties such as suppressed backscattering and spin-momentum locking, which are of great interest for research efforts towards dissipation-less electronics and spintronics. The popular thermo-electrics from the Bi chalcogenide family -- Bi2Se3 and Bi2Te3 -- have been experimentally demonstrated to be promising candidate TI materials, and form the chosen material system for this dissertation research. The first part of this dissertation research focuses on low temperature magneto-transport measurements of mesoscopic topological insulator devices (Chapter 3). The top-down patterning of epitaxial thin films of Bi2Se3 and Bi2Te3 (that are plagued with bulk conduction) is motivated, in part, by an effort to enhance the surface-to-volume ratio in mesoscopic channels. At cryogenic temperatures, transport measurements of these devices reveal periodic conductance fluctuations in straight channel devices, despite the lack of any explicit patterning of the TI film into a ring or a loop. A careful analysis of the surface morphology and comparison with the transport data then demonstrate that scattering off the edges of triangular plateaus at the surface leads to the creation of Aharonov-Bohm electronic orbits responsible for the periodicity. Another major focus of this dissertation work is on combining topological insulators with magnetism. This has been shown to open a gap in the surface states leading to possibilities of magnetic "gating" and the realization of dissipation-less transport at zero-field, amongst several other exotic quantum phenomena. In this dissertation, I present two different schemes for probing these effects in electrical transport devices -- interfacing with insulating ferromagnets (Chapter 4) and bulk magnetic doping (Chapter 5). In Chapter 4, I shall present the integration of GdN with Bi2Se3 thin films. Careful structural, magnetic and electrical characterization of the heterostructures is employed to confirm that the magnetic species is solely restricted to the surface, and that the ferromagnetic GdN layer to be insulating, ensuring current flow solely through the TI layer. We also devise a novel device geometry that enables direct comparison of the magneto-transport properties of TI films with and without proximate magnetism, all, in a single device. A comparative study of weak anti-localization suggested that the overlying GdN suppressed quantum interference in the top surface state. In our second generation hetero-structure devices, GdN is interfaced with low-carrier density, gate-tunable thin films of (Bi,Sb)2Te3 grown on SrTiO3 substrates. These devices enable us to map out the comparison of magneto-transport, as the chemical potential is tuned from the bulk conduction band into the bulk valence band.In a second approach to study the effects of magnetism on TI's, I shall present, in Chapter 5, our results from magnetic doping of (Bi,Sb)2Te3 thin films with Cr -- a system that was recently demonstrated to be a Quantum Anomalous Hall (QAH) insulator. In a Cr-rich regime, a highly insulating, high Curie temperature ferromagnetic phase is achieved. However, a careful, iterative process of tuning the composition of this complex alloy enabled access to the QAHE regime, with the observation of near dissipation-less transport and perfect Hall quantization at zero external field. Furthermore, we demonstrate a field tilt driven crossover between a quantum anomalous Hall phase and a gapless, ferromagnetic TI phase. This crossover manifests itself in an electrically tunable, giant anisotropic magneto-resistance effect that we employ as a quantitative probe of edge transport in this system.

Quantum Transport in Topological Insulators

Quantum Transport in Topological Insulators PDF Author: Johannes Krotz
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Book Description